Infineon Technologies IDB23E60ATMA1

Overview

IDB23E60ATMA1 from Infineon Technologies is a 600 V, 23 A fast-switching Emitter Controlled (EmCon) diode in PG-TO263-3 package, featuring 1.5 V forward voltage at 23 A and 175 °C maximum junction temperature. It delivers low reverse recovery charge (970 nC typ. at 25 °C), soft switching behavior (S = 4.4), and 120 ns reverse recovery time - optimized for high-frequency PFC and resonant LLC converters in industrial SMPS.

For engineers reviewing the IDB23E60ATMA1 datasheet, IDB23E60ATMA1 pinout, IDB23E60ATMA1 application, or IDB23E60ATMA1 equivalent, key selection criteria include reverse recovery softness factor, Qrr vs. temperature dependency, thermal resistance (RthJC = 1.3 K/W), and paralleling capability enabled by EmCon technology's uniform forward voltage distribution.

Technical Context

This EmCon diode employs a proprietary emitter-controlled structure that suppresses minority-carrier injection during turn-off, enabling inherently soft reverse recovery with low di/dt-induced voltage overshoot. Its dynamic performance is characterized across temperature (25–150 °C) and diF/dt (200–1000 A/µs), with trr increasing only modestly from 120 ns to 170 ns and Qrr rising from 970 nC to 1770 nC over that range.

The device operates with a fixed three-terminal configuration (NC, Cathode, Anode), where Pin 1 is internally unconnected - eliminating gate drive complexity while maintaining robust surge capability (IFSM = 89 A) and continuous current derating (28 A at TC = 90 °C). Thermal design is supported by a low RthJC of 1.3 K/W and validated PCB layout guidelines for 6 cm² copper area.

Key Specifications

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, RoHS-compliant, with isolated tab (Pin 2 = Cathode, Pin 3 = Anode, Pin 1 = NC).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-recovery diode applications.

Compared with STTH22L06S and MBR2560CT, IDB23E60ATMA1 uniquely balances low VF, soft recovery, and paralleling stability - making it optimal for high-power, high-reliability PFC and inverter front-end designs where thermal margin and EMI compliance are co-constrained.

Availability

IDB23E60ATMA1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifier modules, motor drive front-ends, and renewable energy inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IDB23E60ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

IDB23E60ATMA1 belongs to Infineon's EmCon diode product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and telecom infrastructure where soft switching and thermal robustness are critical.

FAQ

Is IDB23E60ATMA1 suitable for paralleling without external ballast resistors?

Yes. Its Emitter Controlled (EmCon) structure ensures tight VF matching across devices and temperature, enabling stable current sharing. Application notes confirm successful parallel operation of up to four units in PFC boost stages without forced current balancing, provided layout symmetry and thermal coupling are maintained.

What is the maximum allowable case temperature for continuous 23 A operation?

At 23 A DC, the device must be operated with case temperature ≤ 75 °C to maintain Tj ≤ 175 °C, based on RthJC = 1.3 K/W and Ptot derating curves. At TC = 90 °C, rated IF drops to 28 A - so 23 A is sustainable up to ~95 °C case temperature under typical PCB cooling conditions.

Does Pin 1 require PCB connection or grounding?

No. Pin 1 is internally unconnected (NC) and must remain floating - no solder mask opening, via, or trace should contact it. Routing traces near Pin 1 is acceptable, but intentional connection introduces no functional benefit and risks mechanical stress on the leadframe.

How does Qrr variation with temperature affect design margin in 150 °C ambient systems?

Qrr rises from 970 nC at 25 °C to 1770 nC at 150 °C - an 83 % increase. Designers must verify snubber energy ratings and turn-off loss budgets at worst-case Tj (175 °C), where Qrr reaches ~1900 nC. The datasheet provides full Qrr vs. diF/dt and Tj curves (Pages 5–6) for precise loss modeling.