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Infineon Technologies IDD05SG60CXTMA2

Part No.:
IDD05SG60CXTMA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIDD05SG60CXTMA2.pdf
Description:
DIODE SIL CARB 600V 5A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,000

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Product details

Overview

IDD05SG60CXTMA2 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide Schottky diode rated for 600 V repetitive peak reverse voltage, 5 A continuous forward current at TC < 130 °C, and features zero reverse recovery charge (QC = 6 nC), <10 ns switching time, and operation up to 175 °C junction temperature - deployed in CCM PFC stages of high-efficiency SMPS.

For engineers reviewing the IDD05SG60CXTMA2 datasheet, IDD05SG60CXTMA2 pinout, IDD05SG60CXTMA2 application, or IDD05SG60CXTMA2 equivalent, key selection criteria include its SiC-based zero-recovery behavior, thermal resistance (RthJC = 2.7 K/W), surge capability (IF,max = 150 A), low forward voltage (VF = 2.1–2.8 V), and PG-TO252-3 package compatibility with high-power SMD layouts.

Technical Context

This SiC Schottky diode eliminates minority-carrier injection, resulting in no reverse recovery time (trr) and temperature-independent switching dynamics. Its capacitive charge (QC = 6 nC) dominates turn-off behavior, and dv/dt ruggedness is specified at 50 V/ns under 0–480 V transition.

Thermal design relies on low RthJC = 2.7 K/W and supports sustained operation at Tj = 175 °C. The device exhibits minimal capacitance variation across reverse bias (15–110 pF from VR = 600 V to 1 V), enabling stable high-frequency snubberless operation in hard-switched topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - supports 400 V DC bus designs with 50% safety margin in industrial PFC and solar inverters
IF (cont.)5 A at TC < 130 °C - enables compact heatsinking in space-constrained 1–2 kW power stages
VF2.1–2.8 V (5 A, 25–150 °C) - reduces conduction loss vs. Si diodes while maintaining low thermal runaway risk
QC6 nC - defines total capacitive displacement charge; enables predictable EMI and snubber sizing
tc<10 ns - sets upper bound on switching transition time; critical for >100 kHz hard-switched converters
RthJC2.7 K/W - allows direct thermal path to heatsink; supports >40 W dissipation with modest thermal interface
IF,max150 A (10 µs) - withstands short-circuit and startup surges in motor drives and UPS systems

Pinout & Package

Delivered in PG-TO252-3 (D-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. Pin 1: n.c., Pin 2: Anode (A), Pin 3: Cathode (C).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1No ConnectionElectrically isolated; no routing required - simplifies PCB layout and avoids floating node risks
Pin 2AnodeForward current entry point; tied to AC input or switching node in boost PFC; requires low-inductance trace
Pin 3CathodeHigh-current return path to DC bus; connects directly to large copper pour for thermal and EMI control

Key Features

FeatureDesign Value
Zero reverse recovery (trr = 0)Eliminates recovery-related switching loss and EMI spikes - enables higher frequency operation without snubbers
SiC material systemEnables 175 °C continuous operation and 3× higher thermal conductivity than silicon - improves power density
Low QC/IF figure of merit6 nC / 5 A = 1.2 nC/A - benchmark efficiency metric for high-frequency rectification in PFC and inverters
dv/dt ruggedness50 V/ns - sustains fast voltage transients during hard commutation without false turn-on or avalanche stress
Pb-free & RoHS compliantMeets global environmental compliance requirements without compromising solder joint reliability or thermal performance

Applications

CCM PFC in Server PSUsSolar String Inverters

Use Scenario: Continuous Conduction Mode boost PFC stage operating at 65–100 kHz with 400 V DC output.

IC Role / Device Role / Timing Role: Output rectifier handling 5 A RMS current; replaces Si fast recovery diode to reduce losses and improve efficiency above 96%.

Use Value: Eliminates reverse recovery loss (~1.5 W saved at 100 kHz), lowers heatsink size by 30%, and reduces EMI filter cost.

Use Scenario: DC link rectification in string inverters with 600–1000 V PV array inputs.

IC Role / Device Role / Timing Role: Freewheeling diode in H-bridge output stage; clamps inductive energy during dead-time transitions.

Use Value: Withstands 150 A surge (10 µs) during fault conditions and maintains stable VF across –40 to +85 °C ambient.

Industrial UPS SystemsEV Onboard Chargers

Use Scenario: Bidirectional AC/DC conversion in double-conversion UPS with 500 V DC bus.

IC Role / Device Role / Timing Role: Input rectifier in active front-end (AFE); conducts 5 A average current with high di/dt tolerance.

Use Value: Enables 98% peak efficiency due to low QC and stable VF at 150 °C junction temperature.

Use Scenario: Secondary-side synchronous rectification in 6.6 kW OBC using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-speed freewheeling diode paralleled with MOSFETs; handles body diode conduction during dead time.

Use Value: Prevents voltage overshoot and shoot-through risk via <10 ns tc and 50 V/ns dv/dt rating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D05060E (Wolfspeed)Same 600 V / 5 A rating; QC = 5.8 nC; RthJC = 2.5 K/W; TO-252-2 package (no Pin 1)Requires PCB redesign due to 2-pin vs. 3-pin footprint; lacks n.c. pin for layout flexibilityPreferred where minimal thermal resistance is prioritized and layout allows 2-pin variant
STPSC5H065 (STMicroelectronics)650 V / 5 A; QC = 7.2 nC; VF = 2.3 V (typ.) at 150 °C; RthJC = 3.0 K/WHigher blocking voltage margin but increased conduction loss and thermal resistanceSelected when 650 V rating is mandatory and 0.2 V higher VF is acceptable

Compared with C3D05060E and STPSC5H065, IDD05SG60CXTMA2 offers optimal balance of low QC, industry-leading dv/dt ruggedness (50 V/ns), and PG-TO252-3 pinout compatibility - making it ideal for drop-in upgrades in existing PFC and inverter designs.

Availability

IDD05SG60CXTMA2 is available at Aetrix Electronics and suitable for CCM PFC in server PSUs, solar string inverters, industrial UPS systems, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IDD05SG60CXTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with core expertise in SiC and GaN technologies for high-efficiency power conversion.

This device belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for zero-recovery, high-temperature, high-frequency rectification in industrial and renewable energy systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDD05SG60CXTMA2 is rated for continuous operation up to Tj = 175 °C, verified per JEDEC qualification standards. Derating curves show IF drops to 18 A at TC = 150 °C (10 ms pulse), confirming robust high-temperature capability essential for enclosed industrial environments.

Does this diode require a gate resistor or external snubber network?

No - as a unipolar Schottky diode with no minority carriers, it has no gate and exhibits no reverse recovery. Snubbers are unnecessary unless managing parasitic ringing from layout inductance; dv/dt ruggedness of 50 V/ns ensures immunity to typical converter edge rates.

How does the PG-TO252-3 package differ from standard TO252-2 in layout and thermal performance?

PG-TO252-3 adds a non-connected Pin 1, allowing isolation of the anode pad from adjacent traces and improving creepage/clearance in high-voltage designs. Thermal resistance remains identical (RthJC = 2.7 K/W) since heat flows through the exposed cathode pad, not Pin 1.

Can IDD05SG60CXTMA2 replace a silicon fast recovery diode in an existing 600 V PFC design?

Yes - with identical 600 V VRRM and compatible PG-TO252-3 footprint, it serves as a direct replacement. Designers must verify layout thermal relief and adjust gate drive timing if used alongside Si MOSFETs, as reduced switching loss may shift optimal dead-time settings.

IDD05SG60CXTMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
5A
Voltage - Forward (Vf) (Max) @ If:
2.3 V @ 5 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
30 µA @ 600 V
Capacitance @ Vr, F:
110pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3
Operating Temperature - Junction:
-55°C ~ 175°C

IDD05SG60CXTMA2 FAQ

1.How can I place an order for IDD05SG60CXTMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDD05SG60CXTMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDD05SG60CXTMA2 reliable?

The price and inventory of IDD05SG60CXTMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDD05SG60CXTMA2 is usually 5 days.

3.What payment methods are accepted for IDD05SG60CXTMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDD05SG60CXTMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDD05SG60CXTMA2?

IDD05SG60CXTMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDD05SG60CXTMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDD05SG60CXTMA2?

For technical support, including IDD05SG60CXTMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDD05SG60CXTMA2 requirements.

6.How does Aetrix verify that IDD05SG60CXTMA2 is sourced from the original manufacturer or authorized distributors?

All IDD05SG60CXTMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDD05SG60CXTMA2 meets industry standards.

7.What is the process for return or replacement of IDD05SG60CXTMA2?

All IDD05SG60CXTMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDD05SG60CXTMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDD05SG60CXTMA2 part is unused and in its original packaging.

Return procedure for IDD05SG60CXTMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDD05SG60CXTMA2 Tags

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