Infineon Technologies IDDD04G65C6XTMA1

Overview

IDDD04G65C6XTMA1 from Infineon is a 650 V, 4 A silicon carbide Schottky barrier diode in PG-HDSOP-10-1 package, featuring 1.25 V forward voltage at 4 A and 25 °C, 6.9 nC capacitive charge at 400 V, and 150 V/ns dv/dt ruggedness. It serves as a high-efficiency freewheeling or output rectifier in high-frequency power converters.

For engineers reviewing the IDDD04G65C6XTMA1 datasheet, IDDD04G65C6XTMA1 pinout, IDDD04G65C6XTMA1 application, or IDDD04G65C6XTMA1 equivalent, key selection criteria include reverse voltage rating, forward voltage drop, capacitive charge, thermal resistance (1.6–2.6 K/W), and cathode-anode terminal configuration for PCB layout and thermal management.

Technical Context

This SiC Schottky diode uses Infineon's 6th-generation CoolSiC™ technology with an optimized Schottky metal system, delivering lower Qc × VF figure of merit than prior generations. Its zero recovery charge enables hard-switched operation without reverse recovery losses.

The device operates up to 175 °C junction temperature and exhibits stable reverse leakage (<31 µA at 420 V, 150 °C) and low capacitance (12 pF at 600 V). Its PG-HDSOP-10-1 package integrates exposed cathode pads for enhanced thermal conduction to PCB copper.

Key Specifications

Pinout & Package

PG-HDSOP-10-1 is a surface-mount, thermally enhanced package with exposed cathode pads on pins 6–10 and isolated anode terminals on pins 3–5; pins 1–2 are no-connect. The package supports reflow soldering only (260 °C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D04065E and STPSC4H065DL, IDDD04G65C6XTMA1 delivers the lowest VF and Qc in its class, combined with superior thermal resistance and dv/dt immunity-making it optimal for compact, high-frequency, high-reliability industrial power supplies.

Availability

IDDD04G65C6XTMA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term industrial qualification, and consistent parametric performance across temperature.

Supply support for IDDD04G65C6XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

IDDD04G65C6XTMA1 belongs to the CoolSiC™ 6th-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-AC conversion in industrial and renewable energy systems.

FAQ

What is the maximum junction temperature and how is it validated?

The maximum junction temperature is 175 °C, validated per JEDEC JESD22-A108 stress testing including temperature cycling (–55 °C to 150 °C) and high-temperature operating life (HTOL) at 175 °C for 1000 hours. Thermal derating curves in the datasheet define safe IF vs. TC operation up to this limit.

Can IDDD04G65C6XTMA1 replace silicon diodes in existing designs without layout changes?

Yes, but only if the PCB footprint matches PG-HDSOP-10-1 and thermal copper area meets ≥6 cm² for cathode cooling. Pinout compatibility exists (anode on pins 3–5, cathode on 6–10), but SiC's faster switching demands tighter gate loop control and reduced stray inductance to avoid overshoot.

Is reflow soldering the only approved assembly method?

Yes-only lead-free reflow soldering is qualified per datasheet Section 2.6. Wave soldering, hand soldering, or infrared reflow exceeding 260 °C peak or >60 seconds above 220 °C will damage the die attach or metallization and void qualification.

How does the 150 V/ns dv/dt rating impact system-level EMI?

This rating means the diode remains immune to false turn-on during rapid voltage transitions typical in 650 V IGBT or SiC MOSFET bridges. It reduces need for snubbers and lowers common-mode EMI generation, simplifying EMI filter design in Class B industrial equipment.