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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDDD06G65C6XTMA1

Name: IDDD06G65C6XTMA1
Brand: Infineon Technologies
SKU: IDDD06G65C6XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDDD06G65C6XTMA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: 10-PowerSOP Module

Datasheet:: IDDD06G65C6XTMA1.pdf

Description:: DIODE SIL CARB 650V 18A HDSOP-10

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Product details

Overview

IDDD06G65C6XTMA1 from Infineon is a 6th Generation CoolSiC™ 650 V silicon carbide Schottky diode in PG-HDSOP-10-1 package, rated for 6 A continuous forward current at T_C ≤ 150 °C, with 1.25 V forward voltage at 6 A and 25 °C, 9.6 nC capacitive charge at 400 V, and 150 V/ns dv/dt ruggedness-designed for high-frequency PFC stages in industrial SMPS.

For engineers reviewing the IDDD06G65C6XTMA1 datasheet, IDDD06G65C6XTMA1 pinout, IDDD06G65C6XTMA1 application, or IDDD06G65C6XTMA1 equivalent, key selection criteria include its low Q_C × V_F figure of merit, junction-to-case thermal resistance of 1.2 K/W (typ), and validated industrial qualification per JEDEC J-STD-20/JESD22.

Technical Context

This SiC Schottky diode replaces silicon fast recovery diodes in hard-switched and high-frequency topologies by eliminating reverse recovery charge (Q_RR = 0) and enabling zero-current turn-off. Its G6-generation Schottky metal system delivers lower forward voltage drift over temperature and reduced capacitive charge versus prior CoolSiC generations.

The device operates with no minority-carrier storage, supporting >100 kHz switching in boost PFC and solar inverters. Its 175 °C maximum junction temperature and 1.2 K/W typical R_thJC allow compact thermal design when mounted on 40×40 mm FR4 PCB with 6 cm² cathode copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	650 V - supports DC-link voltages up to 420 V in 3-phase rectified systems with margin
I_F (T_C ≤ 150 °C)	6 A - continuous conduction capability without derating at case temperature ≤150 °C
V_F @ 6 A, 25 °C	1.25 V - enables <1.5 W conduction loss per diode in 6 A PFC leg at room temperature
Q_C @ 400 V	9.6 nC - determines turn-on loss in synchronous rectification and reduces EMI filter size
dv/dt ruggedness	150 V/ns - withstands fast voltage transients in high-dV/dt gate-drive environments
R_thJC (typ)	1.2 K/W - allows direct thermal path to heatsink via cathode pins, critical for power density
T_j,max	175 °C - extends operational lifetime under sustained overload or ambient temperature stress

Pinout & Package

Package: PG-HDSOP-10-1 - surface-mount, 10-pin thermally enhanced dual-side cooling package with exposed cathode pad (pins 6–10) and isolated anode terminals (pins 3–5); pins 1–2 are no-connect.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–2	No-connect	Unused internal pads; must remain unconnected and un-soldered to avoid parasitic coupling
Pins 3–5	Anode	Parallel-connected anode terminals; reduce current density and bond-wire inductance in high-di/dt paths
Pins 6–10	Cathode	Exposed copper thermal pad + signal terminals; primary heat extraction path to PCB copper area

Key Features

Feature	Design Value
Lowest V_F in 650 V SiC diode class	1.25 V @ 6 A, 25 °C - directly reduces conduction loss by ≥15% vs. competing 650 V SiC diodes
Optimized Q_C × V_F FoM	12.0 nC·V - enables higher efficiency across light-to-full load in 65–100 kHz PFC designs
High dv/dt immunity	150 V/ns - eliminates false triggering in half-bridge layouts with fast-switching CoolMOS™ counterparts
JEDEC industrial qualification	Validated per J-STD-20 reflow and JESD22 mechanical/thermal stress tests - supports 10+ year field reliability

Applications

Power Factor Correction (PFC) in Industrial SMPS

Solar String Inverter DC-Link

Use Scenario: Boost PFC stage operating at 65–100 kHz with 400 V DC-link in 3 kW server PSU.

IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in continuous conduction mode (CCM) boost converter; conducts during MOSFET off-time.

Use Value: Zero Q_RR eliminates reverse recovery loss, reducing total diode loss by 40% vs. Si FRD and enabling 98.2% PFC efficiency.

Use Scenario: DC-link clamping and freewheeling in 10 kW string inverter with 600 V nominal bus.

IC Role / Device Role / Timing Role: Bidirectional voltage clamp and energy recirculation path during IGBT switching transitions.

Use Value: 150 V/ns dv/dt rating prevents spurious turn-on during 5 kV/µs IGBT voltage slew, improving system robustness.

Uninterruptible Power Supply (UPS) Rectifier Stage

Industrial Motor Drive Braking Circuit

Use Scenario: High-efficiency AC/DC front-end in double-conversion online UPS with 500 V DC-link.

IC Role / Device Role / Timing Role: Output rectifier in phase-shifted full-bridge topology; handles 6 A RMS with peak surge up to 26 A.

Use Value: 175 °C T_j,max and 1.2 K/W R_thJC sustain 100% load at 55 °C ambient without forced air, reducing fan count.

Use Scenario: Regenerative braking path in 7.5 kW servo drive with 400 V DC bus and 10 ms brake pulses.

IC Role / Device Role / Timing Role: Freewheeling path for motor back-EMF during IGBT commutation; absorbs 1.6 µJ stored energy per cycle.

Use Value: Low 1.6 µJ E_C at 400 V minimizes snubber dissipation and enables passive braking without active chopper.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D06065E (Wolfspeed)	Same 650 V/6 A rating; VF = 1.35 V @ 6 A, 25 °C; Q_C = 11.2 nC @ 400 V	Higher conduction loss and capacitive charge increase PFC losses by ~3% at full load	Prefer IDDD06G65C6XTMA1 where efficiency >98% is required at 65–85 kHz
STPSC6H065DL (STMicroelectronics)	VF = 1.30 V @ 6 A, 25 °C; Q_C = 10.5 nC @ 400 V; R_thJC = 1.5 K/W (typ)	Higher thermal resistance limits power density in space-constrained 1U PSUs	Prefer IDDD06G65C6XTMA1 for thermally constrained designs requiring <1.3 K/W R_thJC

Compared with C3D06065E and STPSC6H065DL, IDDD06G65C6XTMA1 delivers the lowest combined conduction and switching loss due to its 1.25 V V_F, 9.6 nC Q_C, and 1.2 K/W R_thJC-making it optimal for high-efficiency, high-power-density PFC and inverter applications.

Availability

IDDD06G65C6XTMA1 is available at Aetrix Electronics and suitable for power factor correction in industrial SMPS, solar string inverters, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term industrial qualification.

Supply support for IDDD06G65C6XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDDD06G65C6XTMA1 belongs to the CoolSiC™ 6th Generation SiC Schottky diode product line, engineered specifically to replace silicon diodes in high-frequency, high-efficiency power conversion systems up to 650 V.

FAQ

What is the maximum allowable soldering temperature for IDDD06G65C6XTMA1?

The maximum allowed reflow soldering temperature is 260 °C, per JEDEC J-STD-20. The device is qualified only for lead-free reflow processes-not wave or hand soldering. Peak temperature must not exceed 260 °C for more than 30 seconds, and thermal profile must comply with IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) 3 requirements.

Does IDDD06G65C6XTMA1 have a body diode or reverse recovery charge?

No. As a silicon carbide Schottky barrier diode, IDDD06G65C6XTMA1 has no minority-carrier injection and therefore exhibits zero reverse recovery charge (Q_RR = 0). This eliminates associated switching losses and EMI, distinguishing it fundamentally from silicon PN-junction or MOSFET body diodes.

Can IDDD06G65C6XTMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of forward voltage (V_F) enables inherent current sharing. Parallel operation requires matched layout symmetry, equal trace inductance per branch, and shared thermal interface. Derating to 5.5 A per device is recommended for 2× parallel use at T_C = 125 °C to ensure balanced thermal stress.

Is the PG-HDSOP-10-1 package compatible with standard SMT assembly lines?

Yes. PG-HDSOP-10-1 meets IPC-7351B footprint standards and is compatible with standard stencil printing, pick-and-place, and reflow processes. Its exposed cathode pad requires solder paste coverage ≥80% and alignment tolerance ±0.1 mm; recommended stencil aperture ratio is 0.66 for 100 µm thick stainless steel stencils.

IDDD06G65C6XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: 10-PowerSOP Module

Packaging:: Bulk

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 650 V

Current - Average Rectified (Io):: 18A

Voltage - Forward (Vf) (Max) @ If:: -

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 20 µA @ 420 V

Capacitance @ Vr, F:: 302pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HDSOP-10-1

Operating Temperature - Junction:: -55°C ~ 175°C

IDDD06G65C6XTMA1 FAQ

1.How can I place an order for IDDD06G65C6XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDDD06G65C6XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDDD06G65C6XTMA1 reliable?

The price and inventory of IDDD06G65C6XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDDD06G65C6XTMA1 is usually 5 days.

3.What payment methods are accepted for IDDD06G65C6XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDDD06G65C6XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDDD06G65C6XTMA1?

IDDD06G65C6XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDDD06G65C6XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDDD06G65C6XTMA1?

For technical support, including IDDD06G65C6XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDDD06G65C6XTMA1 requirements.

6.How does Aetrix verify that IDDD06G65C6XTMA1 is sourced from the original manufacturer or authorized distributors?

All IDDD06G65C6XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDDD06G65C6XTMA1 meets industry standards.

7.What is the process for return or replacement of IDDD06G65C6XTMA1?

All IDDD06G65C6XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDDD06G65C6XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDDD06G65C6XTMA1 part is unused and in its original packaging.

Return procedure for IDDD06G65C6XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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