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Infineon Technologies IDH02G65C5XKSA2
- Part No.:
- IDH02G65C5XKSA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
IDH02G65C5XKSA2.pdf
- Description:
- DIODE SIL CARB 650V 2A TO220-2
- Quantity:
- Payment:
- Shipping:
Inventory:458
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Product details
Overview
IDH02G65C5XKSA2 from Infineon Technologies is a 650 V, 2 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage (2 A, 25–150°C), and 4 nC capacitive charge at 400 V. It operates up to 175°C junction temperature and delivers high surge current capability (23 A, 10 ms) for high-efficiency PFC and solar inverter front-end rectification.
For engineers reviewing the IDH02G65C5XKSA2 datasheet, IDH02G65C5XKSA2 pinout, IDH02G65C5XKSA2 application, or IDH02G65C5XKSA2 equivalent, this SiC diode is selected for high-frequency, high-temperature switching where low Qc, temperature-stable VF, and avalanche-rated ruggedness are critical - especially in compact, thermally constrained power stages.
Technical Context
This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower figure-of-merit (Qc × Vf) and improved thermal resistance (RthJC = 2.6 K/W typ). Its unipolar conduction eliminates minority-carrier storage, enabling true zero-recovery behavior across -55°C to 175°C.
The device is rated for 650 V repetitive peak reverse voltage (VRRM), tested at 4.5 mA leakage, with dv/dt ruggedness of 100 V/ns under dynamic blocking. Its 70 pF capacitance at 1 V drops to 8.9 pF at 600 V, supporting fast switching with predictable EMI profile.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Sustains full rated DC bus voltage in 650 V-class PFC and inverter designs without derating. |
| IF (TC < 155°C) | 2 A continuous - Supports steady-state conduction in compact heatsink-limited SMPS and UPS rectifier legs. |
| VF @ 2 A, 25°C | 1.5–1.7 V - Enables low conduction loss in high-frequency operation, reducing I²R heating vs. Si counterparts. |
| Qc @ 400 V | 4 nC - Minimizes turn-off losses and EMI during hard-switching transitions in >100 kHz topologies. |
| RthJC | 2.6 K/W (typ) - Allows direct mounting to heatsink with predictable thermal path; enables 36 W dissipation at TC = 25°C. |
| IR @ 650 V, 150°C | 0.4–240 µA - Ensures stable blocking under elevated temperature stress, critical for solar inverter daytime operation. |
| dv/dt ruggedness | 100 V/ns - Withstands steep voltage transients in LLC resonant and phase-shifted full-bridge circuits without false turn-on. |
Pinout & Package
Package: PG-TO220-2 (D0265C5), isolated tab, lead-free, RoHS-compliant. Pin 1 = Cathode (C), Pin 2 = Anode (A); Pin 3 not assigned (n.a.). Tab is electrically connected to cathode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Cathode) | Output node / high-side return | Connected to system ground or low-side switch source; carries full load current and must be routed with low-inductance layout. |
| Pin 2 (Anode) | Input node / high-voltage rail connection | Interfaces directly with AC/DC rectified bus or inverter leg midpoint; requires creepage/clearance compliance per IEC 62368. |
| Tab (Cathode) | Thermal & electrical reference | Electrically tied to Pin 1; serves as primary heat transfer path to heatsink - must be insulated if mounting to grounded chassis. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates switching tail current and associated snubber losses - enables clean hard-switching up to 500 kHz. |
| Temperature-independent VF | VF increases only ~0.3 mV/°C over 25–150°C - simplifies thermal design and improves regulation stability across ambient range. |
| High surge rating | 23 A non-repetitive surge (10 ms, 25°C) - withstands inrush and fault currents in grid-tied inverters without derating. |
| Thin-wafer + diffusion soldering | Reduces RthJC by 15% vs. Gen 4 and lowers Qc × Vf - directly improves power density in space-constrained 1U server PSUs. |
| Avalanche-rated | 100% tested under 10 ms avalanche stress - guarantees robustness against inductive kickback in motor drive freewheeling paths. |
Applications
| Power Factor Correction (PFC) | Solar Inverter DC Link |
|---|---|
Use Scenario: Boost-stage output rectifier in continuous conduction mode (CCM) PFC for 1–3 kW industrial SMPS. IC Role / Device Role / Timing Role: Unidirectional high-voltage freewheeling diode handling 2 A RMS current at 100–300 kHz switching frequency. Use Value: Zero Qrr reduces boost diode losses by >60% vs. Si FRD, enabling >98.5% PFC efficiency at full load and 50°C ambient. | Use Scenario: DC-link clamping and freewheeling path in three-phase string inverters operating at 1000 V DC bus. IC Role / Device Role / Timing Role: Bidirectional blocking and unidirectional conduction element in H-bridge leg, exposed to 650 V reverse bias and 23 A surge. Use Value: Stable 175°C operation and 100 V/ns dv/dt immunity prevent false triggering during fast IGBT commutation edges. |
| Uninterruptible Power Supply (UPS) | Server & Telecom Rectification |
Use Scenario: Output rectifier in double-conversion online UPS inverters delivering 2–5 kVA with <1% THD. IC Role / Device Role / Timing Role: High-reliability output stage diode conducting 2 A average current with 10 ms overload tolerance. Use Value: 2.6 K/W RthJC allows passive cooling in sealed UPS enclosures, eliminating fan failure risk and extending MTBF. | Use Scenario: Secondary-side synchronous rectifier replacement in 48 V input telecom PSUs targeting 96% efficiency at 50% load. IC Role / Device Role / Timing Role: Low-loss freewheeling path in active clamp forward or LLC resonant converters operating at 300–600 kHz. Use Value: 4 nC Qc cuts turn-off energy by 85% vs. Si Schottky, reducing MOSFET gate driver stress and EMI filter size. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D02065E (Wolfspeed) | Same 650 V/2 A rating; VF = 1.8 V (2 A, 150°C); Qc = 4.2 nC; TO-220-2 package. | Slightly higher VF increases conduction loss in high-duty-cycle PFC; identical thermal footprint. | Preferred when legacy Wolfspeed supply chain or qualification history is required. |
| STP2S065 (STMicroelectronics) | 650 V/2 A; VF = 1.7 V (2 A, 25°C); Qc = 3.8 nC; TO-220AC package with non-isolated tab. | Non-isolated tab requires insulating washer; lower Qc benefits ultra-high-frequency designs but demands tighter layout control. | Select when minimizing capacitive charge is prioritized over thermal isolation simplicity. |
Compared with C3D02065E and STP2S065, IDH02G65C5XKSA2 offers the lowest RthJC (2.6 K/W), best high-temperature VF stability, and fully isolated tab - making it optimal for thermally aggressive, safety-critical, and long-lifecycle industrial power systems.
Availability
IDH02G65C5XKSA2 is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC-link clamping, and uninterruptible power supply rectification requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified reliability.
Supply support for IDH02G65C5XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies since 2001.
IDH02G65C5XKSA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ CFD7 transistors in high-density, high-efficiency AC/DC and DC/AC conversion systems.
FAQ
Is IDH02G65C5XKSA2 pin-compatible with earlier Infineon SiC diodes like IDH02G65C3?
No. While both use TO-220-2 packaging, IDH02G65C5XKSA2 features updated thermal design and thinner die, resulting in different internal parasitics and slightly altered mounting torque requirements (70 Ncm vs. 60 Ncm). Layout reuse is possible, but thermal simulation and surge testing should be repeated.
What is the maximum recommended case temperature for continuous operation?
The datasheet specifies IF = 2 A is rated for TC < 155°C. Operation up to TC = 175°C is permitted only for short-duration surges (e.g., 10 ms), not continuous conduction. For sustained 2 A load, maintain TC ≤ 155°C using appropriate heatsinking per RthJC = 2.6 K/W (typ).
Does IDH02G65C5XKSA2 require a gate resistor or snubber network?
No gate resistor - it is a diode, not a controlled device. However, a small RC snubber (e.g., 10 Ω + 100 pF) across anode–cathode is recommended in high-dv/dt environments (>50 V/ns) to suppress ringing caused by stray inductance interacting with its 70–9 pF voltage-dependent capacitance.
Can IDH02G65C5XKSA2 be used in parallel configurations?
Parallel operation is not recommended without individual current-sharing resistors or active balancing. Unlike Si diodes, SiC Schottky devices exhibit negative temperature coefficient for VF, increasing current imbalance under thermal gradient - leading to thermal runaway unless mitigated by matched layout, forced airflow, and external ballasting.
IDH02G65C5XKSA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Last Time Buy
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 2A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 2 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- 70pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDH02G65C5XKSA2 FAQ
1.How can I place an order for IDH02G65C5XKSA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDH02G65C5XKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDH02G65C5XKSA2 reliable?
The price and inventory of IDH02G65C5XKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH02G65C5XKSA2 is usually 5 days.
3.What payment methods are accepted for IDH02G65C5XKSA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH02G65C5XKSA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDH02G65C5XKSA2?
IDH02G65C5XKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDH02G65C5XKSA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDH02G65C5XKSA2?
For technical support, including IDH02G65C5XKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH02G65C5XKSA2 requirements.
6.How does Aetrix verify that IDH02G65C5XKSA2 is sourced from the original manufacturer or authorized distributors?
All IDH02G65C5XKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH02G65C5XKSA2 meets industry standards.
7.What is the process for return or replacement of IDH02G65C5XKSA2?
All IDH02G65C5XKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDH02G65C5XKSA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDH02G65C5XKSA2 part is unused and in its original packaging.
Return procedure for IDH02G65C5XKSA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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