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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDH04S60CAKSA1

Name: IDH04S60CAKSA1
Brand: Infineon Technologies
SKU: IDH04S60CAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDH04S60CAKSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDH04S60CAKSA1.pdf

Description:: DIODE SIL CARB 600V 4A TO220-2-2

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IDH04S60CAKSA1 from Infineon Technologies is a 2nd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V DC blocking voltage, 4 A continuous forward current, and 8 nC capacitive charge. It operates with zero reverse recovery, no forward recovery, and stable switching behavior across −55 °C to 175 °C junction temperature-enabling high-efficiency CCM PFC and motor drive designs.

For engineers reviewing the IDH04S60CAKSA1 datasheet, IDH04S60CAKSA1 pinout, IDH04S60CAKSA1 application, or IDH04S60CAKSA1 equivalent, key selection criteria include its 1.7–2.4 V forward voltage range (dependent on T_j), 3.6 K/W junction-to-case thermal resistance, 50 V/ns dv/dt ruggedness, and PG-TO220-2 package suitability for high-power thermal management.

Technical Context

This SiC Schottky diode eliminates minority carrier storage, resulting in no reverse recovery time (t_rr) and no temperature-dependent switching loss. Its capacitive displacement current waveform exhibits a fixed time constant t_c < 10 ns-distinct from conventional diodes-and maintains consistent dv/dt immunity up to 50 V/ns at V_R = 0–480 V.

Thermal design is enabled by low R_thJC = 3.6 K/W and high surge capability: I_F,SM = 32 A (t_p = 10 ms), I_F,max = 132 A (t_p = 10 µs). The device is qualified per JEDEC standards and RoHS-compliant with Pb-free lead plating.

Key Specifications

Parameter	Value and Actual Design Meaning
DC Blocking Voltage	600 V - supports 400 V AC input rectification with margin for transients in industrial PFC stages
Continuous Forward Current	4 A at T_C < 140 °C - defines steady-state conduction rating under heatsink-limited conditions
Forward Voltage	1.7–2.4 V @ 4 A - low conduction loss across operating temperature range, reducing thermal load
Capacitive Charge	8 nC - determines turn-on energy loss in hard-switched topologies like boost PFC
Junction-to-Case Thermal Resistance	3.6 K/W - enables direct mounting to heatsinks for efficient power dissipation up to 42 W
dv/dt Ruggedness	50 V/ns - ensures reliable operation in fast-switching SiC MOSFET half-bridges without snubbers
Reverse Leakage Current	≤500 µA @ 600 V, 150 °C - minimal standby loss in high-temperature motor drive environments

Pinout & Package

Package: PG-TO220-2 (isolated tab, 2-pin through-hole), with copper leadframe, Pb-free plating, and M3/M3.5 screw-mount compatibility (60 mNm torque).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Anode)	Anode connection	Connected to switching node in boost PFC; carries full load current and high di/dt
Pin 2 (Cathode)	Cathode connection	Connected to output rail or bus capacitor; serves as main return path for forward conduction

Key Features

Feature	Design Value
No reverse recovery charge (Q_rr = 0)	Eliminates switching loss and EMI associated with tail current in silicon diodes
Temperature-stable switching behavior	Switching parameters (t_c, Q_c, dv/dt immunity) remain unchanged from −55 °C to 175 °C
High surge current capability	Withstands 32 A for 10 ms and 132 A for 10 µs-critical for motor startup and line transient events
JEDEC-qualified reliability	Validated per J-STD-20 and JESD22 for automotive and industrial applications requiring long-term stability

Applications

CCM Boost PFC Stage

Industrial Motor Drive Inverter

Use Scenario: Continuous Conduction Mode (CCM) boost converter in 3.3 kW server PSU front-end.

IC Role / Device Role / Timing Role: Freewheeling diode in high-frequency (100–300 kHz) boost stage, conducting during MOSFET off-time.

Use Value: Zero Q_rr reduces total switching loss by >40% vs. Si FRD; 8 nC Q_c minimizes turn-on loss in synchronous rectified designs.

Use Scenario: Brake chopper and freewheeling path in 7.5 kW HVAC inverter output stage.

IC Role / Device Role / Timing Role: Bidirectional clamping and regenerative energy recirculation diode in IGBT/SiC hybrid inverter leg.

Use Value: 50 V/ns dv/dt rating prevents false triggering during 10 kV/µs IGBT switching; 175 °C max T_j supports compact heatsink integration.

Solar Microinverter DC Link

EV Onboard Charger (OBC) PFC

Use Scenario: High-efficiency DC link clamp in 300–600 V string-level microinverter.

IC Role / Device Role / Timing Role: Snubberless voltage clamp during MPPT transients and grid fault recovery.

Use Value: 600 V V_DC rating provides 2× safety margin over 300 V nominal DC bus; low leakage (<500 µA @ 150 °C) preserves efficiency at elevated ambient.

Use Scenario: Input rectifier in 6.6 kW bidirectional OBC with dual-phase interleaved PFC.

IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode in critical conduction mode (CrCM) boost cell.

Use Value: Stable V_F (1.7–2.4 V) across temperature enables predictable thermal derating; PG-TO220-2 package allows direct heatsink mounting in space-constrained OBC modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D04060E (Wolfspeed)	Same 600 V / 4 A rating; higher V_F typ. = 1.85 V @ 4 A, 25 °C; R_thJC = 3.0 K/W	Better thermal performance but slightly higher conduction loss; requires tighter layout for thermal interface	Preferred where board-level thermal resistance dominates system loss budget
SS14HE3/52T (Vishay)	Si-based Schottky; 40 V rating, 4 A avg.; no SiC advantages; V_F = 0.52 V @ 4 A, 25 °C	Only suitable for low-voltage (<60 V) applications; cannot replace in 600 V PFC or motor drives	Not a functional substitute-only considered for cost-sensitive, low-voltage legacy designs

Compared with C3D04060E, IDH04S60CAKSA1 offers lower V_F at high T_j and JEDEC qualification for industrial use; versus SS14HE3/52T, it delivers true 600 V SiC performance with zero Q_rr, enabling next-gen efficiency targets.

Availability

IDH04S60CAKSA1 is available at Aetrix Electronics and suitable for CCM PFC, industrial motor drives, solar microinverters, and EV onboard chargers requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IDH04S60CAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy systems.

IDH04S60CAKSA1 belongs to Infineon's thinQ!™ 2nd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-efficiency power conversion in PFC, motor control, and renewable energy inverters.

FAQ

Is IDH04S60CAKSA1 pin-compatible with standard TO-220 diodes?

Yes-it uses the PG-TO220-2 outline, matching mechanical footprint and mounting hole positions of industry-standard TO-220 packages. Pin 1 is Anode and Pin 2 is Cathode, consistent with JEDEC TO-220AB polarity conventions. The isolated tab allows direct heatsink mounting without insulating hardware.

Does IDH04S60CAKSA1 require a gate driver or external control circuitry?

No-it is a passive uncontrolled diode with no gate terminal. It conducts when forward-biased and blocks when reverse-biased, requiring no drive signals, timing control, or biasing networks. Its zero Q_rr eliminates need for snubbers or dead-time optimization in synchronous circuits.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies continuous forward current I_F = 4 A at T_C < 140 °C. Operation above this temperature requires derating per the I_F vs. T_C curve on page 2; junction temperature must not exceed 175 °C, and thermal design must maintain R_thJC ≤ 3.6 K/W under worst-case airflow and ambient conditions.

Can IDH04S60CAKSA1 be used in life-support or aerospace systems?

Infineon explicitly restricts use in life-support, aviation, or aerospace applications unless accompanied by express written approval. The device is qualified per JEDEC for industrial and automotive target applications-but not certified to DO-254, ISO 26262 ASIL-D, or IEC 61508 SIL-3 without additional validation by the end-system integrator.

IDH04S60CAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 4A

Voltage - Forward (Vf) (Max) @ If:: 1.9 V @ 4 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 50 µA @ 600 V

Capacitance @ Vr, F:: 130pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-2

Operating Temperature - Junction:: -55°C ~ 175°C

IDH04S60CAKSA1 FAQ

1.How can I place an order for IDH04S60CAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH04S60CAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH04S60CAKSA1 reliable?

The price and inventory of IDH04S60CAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH04S60CAKSA1 is usually 5 days.

3.What payment methods are accepted for IDH04S60CAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH04S60CAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH04S60CAKSA1?

IDH04S60CAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH04S60CAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH04S60CAKSA1?

For technical support, including IDH04S60CAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH04S60CAKSA1 requirements.

6.How does Aetrix verify that IDH04S60CAKSA1 is sourced from the original manufacturer or authorized distributors?

All IDH04S60CAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH04S60CAKSA1 meets industry standards.

7.What is the process for return or replacement of IDH04S60CAKSA1?

All IDH04S60CAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH04S60CAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH04S60CAKSA1 part is unused and in its original packaging.

Return procedure for IDH04S60CAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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