Infineon Technologies IDH05G65C5XKSA2

Overview

IDH05G65C5XKSA2 from Infineon is a 650 V, 5 A silicon carbide Schottky diode in TO-220-2 package, designed for high-frequency, high-temperature power conversion. It delivers zero reverse recovery charge, 1.5–1.7 V forward voltage at 5 A and 25°C, 8 nC capacitive charge at 400 V, and operates up to 175°C junction temperature. Used in PFC stages of solar inverters and UPS systems where thermal stability and EMI reduction are critical.

For engineers reviewing the IDH05G65C5XKSA2 datasheet, IDH05G65C5XKSA2 pinout, IDH05G65C5XKSA2 application, or IDH05G65C5XKSA2 equivalent, key selection criteria include its SiC-based zero-recovery behavior, 650 V V_RRM, 1.7 V V_F max at 150°C, 1.7 K/W typical R_thJC, and compatibility with CoolMOS™ 650 V switching devices in hard-switched topologies.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Q_C × V_F figure of merit and improved thermal resistance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation at >100 kHz without reverse recovery losses.

The device exhibits temperature-independent switching behavior: reverse current remains <600 µA at 650 V and 150°C, and forward voltage increases only modestly (1.5 V → 2.1 V) across –55°C to 150°C at 5 A. dv/dt ruggedness is rated at 100 V/ns under dynamic blocking conditions.

Key Specifications

Pinout & Package

Supplied in PG-TO220-2 package (leadframe variant with isolated tab), featuring two terminals: Pin 1 = Cathode (C), Pin 2 = Anode (A). Pin 3 is not assigned (n.a.). The metal tab is electrically connected to the cathode and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D05065E and STPSC5H065, IDH05G65C5XKSA2 offers the lowest combined Q_C × V_F figure of merit and tightest V_F distribution, making it optimal for thermally constrained, high-frequency PFC and inverter applications demanding consistent efficiency across temperature.

Availability

IDH05G65C5XKSA2 is available at Aetrix Electronics and suitable for solar inverter DC link, server PSU PFC stage, and industrial UPS output rectifier applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IDH05G65C5XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

IDH05G65C5XKSA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered to complement 650 V CoolMOS™ power devices and enable high-power-density, high-efficiency power conversion systems operating above 100 kHz.

FAQ

Is IDH05G65C5XKSA2 pin-compatible with standard TO-220-2 silicon diodes?

Yes - it uses the same PG-TO220-2 mechanical outline and terminal spacing as legacy silicon rectifiers, allowing drop-in replacement in existing layouts. However, its cathode-isolated tab requires verification of heatsink isolation, as the metal tab connects directly to Pin 1 (cathode), unlike many Si diodes with insulated tabs.

What is the maximum recommended mounting torque for the TO-220-2 package?

The datasheet specifies a maximum mounting torque of 60 N·cm for M2.5 screws. Exceeding this value risks cracking the ceramic passivation layer or damaging the die attach, potentially increasing thermal resistance or causing premature failure under thermal cycling.

Does IDH05G65C5XKSA2 require a gate resistor or snubber network?

No - as a Schottky diode, it has no gate terminal and does not require external gate control. However, a small RC snubber (e.g., 100 Ω + 100 pF) across anode-cathode is recommended in high-di/dt applications (>200 A/µs) to suppress voltage ringing caused by stray inductance interacting with its low capacitance.

How does the 10 ms avalanche test condition impact reliability in real-world use?

All units undergo 10 ms avalanche stress testing at rated V_RRM to validate robustness against transient overvoltage events such as lightning surges or inductive kickback. This ensures guaranteed single-pulse survivability beyond normal operating conditions, supporting design-in for mission-critical industrial and grid-tied equipment.