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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDH05SG60CXKSA1

Name: IDH05SG60CXKSA1
Brand: Infineon Technologies
SKU: IDH05SG60CXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDH05SG60CXKSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDH05SG60CXKSA1.pdf

Description:: DIODE SIL CARB 600V 5A TO220-2-2

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IDH05SG60CXKSA1 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 5 A continuous forward current at T_C < 130 °C, featuring zero reverse recovery charge (Q_C = 6 nC), temperature-independent switching, and 2.7 K/W junction-to-case thermal resistance. It is deployed in high-efficiency CCM PFC stages of SMPS, solar inverters, UPS systems, and motor drives operating at elevated temperatures.

For engineers reviewing the IDH05SG60CXKSA1 datasheet, IDH05SG60CXKSA1 pinout, IDH05SG60CXKSA1 application, or IDH05SG60CXKSA1 equivalent, key selection criteria include its SiC-based zero-recovery behavior, surge capability (I_F,max = 150 A, t_p = 10 µs), low forward voltage (V_F = 2.1–2.3 V @ 5 A, 25 °C), and JEDEC-qualified reliability for industrial power conversion.

Technical Context

This SiC Schottky diode eliminates minority-carrier injection, resulting in no reverse recovery time (t_rr) and no forward recovery-enabling clean, predictable switching across –55 °C to 175 °C. Its capacitive charge (Q_C) dominates switching loss and is specified at 6 nC, independent of junction temperature, load current, or di/dt.

The device uses a planar SiC Schottky barrier structure with optimized metallization and passivation for stable high-voltage blocking (600 V V_RRM) and low leakage (I_R ≤ 350 µA @ 600 V, 150 °C). Thermal performance is defined by R_thJC = 2.7 K/W, enabling high-power density mounting on heatsinks via M3/M3.5 screws (60 Ncm torque).

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports 400 V AC input rectification with 50% safety margin in 3-phase PFC designs
I_F (cont.)	5 A @ T_C < 130 °C - enables compact heatsink sizing in convection-cooled 1–2 kW converters
Q_C	6 nC - defines total capacitive switching charge; determines turn-off loss in hard-switched topologies
V_F	2.1–2.3 V @ 5 A, 25 °C - lower conduction loss than Si fast recovery diodes at same current
R_thJC	2.7 K/W - allows direct thermal path to heatsink; limits ΔT_J-C to 13.5 K at 5 W dissipation
I_F,max	150 A @ t_p = 10 µs - withstands short-circuit events in IGBT/SiC MOSFET half-bridge freewheeling paths
I_R	≤350 µA @ 600 V, 150 °C - ensures minimal leakage contribution to standby loss in high-temp environments

Pinout & Package

Package: PG-TO220-2 (standard through-hole TO-220 variant with 2 leads, isolated tab, RoHS-compliant lead plating). Mounting requires M3 or M3.5 screws at 60 Ncm torque, 1.6 mm from case edge for wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Cathode (C)	Electrically connected to metal tab; must be electrically isolated from heatsink unless circuit design requires cathode-to-chassis connection
Pin 2 (Lead)	Anode (A)	Single lead for anode connection; PCB layout must minimize loop inductance for high-di/dt operation

Key Features

Feature	Design Value
Zero reverse recovery charge	Eliminates commutation losses and EMI spikes in hard-switched converters; removes need for snubbers
Temperature-stable switching	Q_C, V_F, and I_R vary predictably with T_j; simplifies thermal derating and control-loop design
High surge robustness	Withstands 150 A non-repetitive surge (10 µs) and 26 A repetitive surge (10 ms, 25 °C), supporting fault-tolerant PFC stages
Low figure-of-merit (Q_C/I_F)	1.2 nC/A - benchmark value for 600 V SiC Schottky diodes; balances switching and conduction loss
JEDEC-qualified reliability	Qualified per J-STD-20 and JESD22 for industrial applications; includes 10 ms avalanche testing at 20 mA

Applications

Industrial SMPS CCM PFC

Solar String Inverter DC Link

Use Scenario: Continuous Conduction Mode (CCM) boost PFC stage in 1.5–3 kW server PSUs or telecom rectifiers.

IC Role / Device Role / Timing Role: Freewheeling diode in boost converter output stage; conducts during MOSFET/IGBT off-time.

Use Value: Zero Q_RR reduces switching loss by >40% vs. Si FRD; enables 100+ kHz operation without efficiency penalty.

Use Scenario: DC link clamping and freewheeling in dual-stage solar inverters handling 600–1000 V DC input.

IC Role / Device Role / Timing Role: Anti-parallel diode for SiC MOSFETs in H-bridge output stage; handles reactive current during modulation.

Use Value: Stable V_F up to 150 °C maintains efficiency in unventilated outdoor enclosures; low I_R prevents thermal runaway at high V_R.

UPS Inverter Output Stage

Industrial Motor Drive Brake Circuit

Use Scenario: Output rectification and regeneration path in online double-conversion UPS systems with 400 V DC bus.

IC Role / Device Role / Timing Role: Bidirectional conduction element in IGBT-based inverter leg; conducts regenerative energy back to DC bus.

Use Value: 2.7 K/W R_thJC enables direct heatsink mounting; supports 10 s overload at 18 A (T_C = 150 °C) without thermal shutdown.

Use Scenario: Dynamic braking diode in 3–7.5 kW variable-frequency drives dissipating regenerated motor energy into brake resistors.

IC Role / Device Role / Timing Role: Unidirectional path for DC current from motor phase to braking resistor during deceleration.

Use Value: 150 A surge rating absorbs 10 µs transients from IGBT turn-off; no recovery tail avoids cross-conduction risk with gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D05060E (Wolfspeed)	Same 600 V / 5 A rating; Q_C = 5.8 nC; R_thJC = 2.5 K/W; TO-220-2 package with insulated tab	Marginally lower Q_C and better thermal resistance; identical mounting and footprint	Preferred where <0.2 nC Q_C reduction and 0.2 K/W lower R_thJC justify sourcing change
STPSC5H065 (STMicroelectronics)	650 V / 5 A; Q_C = 7.2 nC; V_F = 2.4 V @ 5 A, 25 °C; TO-220AC package (non-isolated tab)	Higher voltage rating but higher V_F and Q_C; requires insulating washer for tab isolation	Selected when 650 V margin is mandatory and higher conduction loss is acceptable

Compared with C3D05060E and STPSC5H065, IDH05SG60CXKSA1 offers the lowest V_F among 600 V-class 5 A SiC diodes and JEDEC qualification for industrial use-making it optimal for thermally constrained, high-reliability CCM PFC and solar inverter designs.

Availability

IDH05SG60CXKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, UPS systems, and motor drive brake circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDH05SG60CXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

IDH05SG60CXKSA1 belongs to the thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-temperature power conversion in industrial and renewable energy systems.

FAQ

Is IDH05SG60CXKSA1 compatible with standard TO-220 heatsinks?

Yes. The PG-TO220-2 package has a standardized outline matching JEDEC TO-220AB mechanical dimensions. Its isolated metal tab allows direct mounting to electrically grounded heatsinks without insulation hardware, provided system grounding architecture permits cathode-to-chassis connection.

Does IDH05SG60CXKSA1 require gate driving or external control signals?

No. As a passive two-terminal Schottky diode, IDH05SG60CXKSA1 operates solely based on applied voltage polarity and magnitude. It conducts when anode voltage exceeds cathode voltage by ≥ V_F, with no control inputs, biasing, or timing dependencies.

What is the maximum allowable case temperature during continuous operation?

The datasheet specifies I_F = 5 A is rated for T_C < 130 °C. At T_C = 130 °C, derating begins linearly to zero current at T_C = 175 °C. For sustained 5 A operation, thermal design must ensure case temperature remains below 130 °C under worst-case ambient and airflow conditions.

Can IDH05SG60CXKSA1 replace silicon fast recovery diodes in existing designs?

Yes, with layout review. Its zero Q_RR eliminates reverse recovery spikes, reducing EMI and snubber stress-but may increase voltage overshoot due to faster di/dt. Layout must minimize parasitic inductance, and gate drive strength may need adjustment to manage ringing in synchronous rectifier configurations.

IDH05SG60CXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 5A

Voltage - Forward (Vf) (Max) @ If:: 2.3 V @ 5 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 30 µA @ 600 V

Capacitance @ Vr, F:: 110pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-2

Operating Temperature - Junction:: -55°C ~ 175°C

IDH05SG60CXKSA1 FAQ

1.How can I place an order for IDH05SG60CXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH05SG60CXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH05SG60CXKSA1 reliable?

The price and inventory of IDH05SG60CXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH05SG60CXKSA1 is usually 5 days.

3.What payment methods are accepted for IDH05SG60CXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH05SG60CXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH05SG60CXKSA1?

IDH05SG60CXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH05SG60CXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH05SG60CXKSA1?

For technical support, including IDH05SG60CXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH05SG60CXKSA1 requirements.

6.How does Aetrix verify that IDH05SG60CXKSA1 is sourced from the original manufacturer or authorized distributors?

All IDH05SG60CXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH05SG60CXKSA1 meets industry standards.

7.What is the process for return or replacement of IDH05SG60CXKSA1?

All IDH05SG60CXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH05SG60CXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH05SG60CXKSA1 part is unused and in its original packaging.

Return procedure for IDH05SG60CXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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