Infineon Technologies IDH06S60CAKSA1

Overview

IDH06S60CAKSA1 from Infineon Technologies is a 2nd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V DC blocking and 6 A continuous forward current, featuring zero reverse recovery charge, temperature-stable switching, and 15 nC capacitive charge-designed for CCM PFC and motor drive power stages.

For engineers reviewing the IDH06S60CAKSA1 datasheet, IDH06S60CAKSA1 pinout, IDH06S60CAKSA1 application, or IDH06S60CAKSA1 equivalent, key selection criteria include its 600 V V_RRM, 1.5–2.1 V forward voltage across temperature, 2.4 K/W junction-to-case thermal resistance, and absence of minority-carrier reverse recovery in high-frequency hard-switching topologies.

Technical Context

This SiC Schottky diode operates without minority carrier injection, eliminating reverse recovery time (t_rr) and associated switching losses. Its capacitive displacement current waveform has a time constant t_c < 10 ns, independent of junction temperature, load current, or di/dt.

Rated for 600 V repetitive peak reverse voltage and 49 A surge non-repetitive forward current (10 ms sine half-wave), it sustains operation up to 175 °C junction temperature with 2.4 K/W R_thJC, enabling high-power-density thermal design in compact TO-220-2 packages.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (standard through-hole, isolated tab, 2-pin configuration). Mounting torque: 60 mNm for M3/M3.5 screws. Soldering: 260 °C for 10 s at 1.6 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06060E and STPSC6H065, IDH06S60CAKSA1 offers the lowest V_F (1.7 V max at 150 °C) and best thermal resistance (2.4 K/W), making it optimal for thermally constrained, high-efficiency CCM PFC designs where conduction loss dominates.

Availability

IDH06S60CAKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and renewable energy inverters requiring stable component supply and JEDEC-qualified reliability.

Supply support for IDH06S60CAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, headquartered in Munich.

IDH06S60CAKSA1 belongs to Infineon's thinQ!™ 2nd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-efficiency power conversion in CCM PFC and motor drive applications.

FAQ

Is IDH06S60CAKSA1 suitable for use in synchronous rectification topologies?

No-it is a unidirectional Schottky diode, not a MOSFET-based synchronous rectifier. It functions as a passive freewheeling or boost rectifier. For synchronous rectification, discrete SiC MOSFETs or integrated SR controllers are required. Its zero Q_rr and low Q_c do reduce body-diode conduction loss in complementary FETs, but it cannot replace an active SR switch.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 140 °C, as specified in the "Continuous forward current" rating (I_F, T_C < 140 °C = 6 A). Exceeding this limits junction temperature beyond 175 °C even with R_thJC = 2.4 K/W, risking parametric shift and long-term reliability degradation.

Does IDH06S60CAKSA1 require a heatsink in a 6 A, 100 kHz PFC application?

Yes-a heatsink is required. At 6 A and 100 kHz, conduction loss (~1.6 V × 6 A = 9.6 W) plus switching loss (Q_c × V × f ≈ 15 nC × 400 V × 100 kHz = 0.6 W) totals ~10.2 W. With R_thJC = 2.4 K/W, a heatsink with ≤ 10 K/W R_thCA is needed to hold T_C ≤ 140 °C and T_j ≤ 175 °C.

Can IDH06S60CAKSA1 be used in place of a silicon fast recovery diode in an existing design?

Yes-with layout review. Its lower V_F, zero Q_rr, and higher dv/dt ruggedness improve efficiency and EMI, but its capacitive turn-off behavior differs from minority-carrier diodes. Snubber networks may need reduction or removal, and gate-drive noise immunity should be verified due to faster voltage transitions.