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Infineon Technologies IDH06SG60CXKSA1

Part No.:
IDH06SG60CXKSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-220-2
Datasheet:
AetrixIDH06SG60CXKSA1.pdf
Description:
DIODE SIL CARB 600V 6A TO220-2-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,974

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Product details

Overview

IDH06SG60CXKSA1 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 6 A continuous forward current at TC < 130 °C, with zero reverse recovery charge and temperature-independent switching. It delivers 8 nC total capacitive charge, 2.1 K/W junction-to-case thermal resistance, and operates up to 175 °C junction temperature - deployed in CCM PFC stages of high-efficiency SMPS.

For engineers reviewing the IDH06SG60CXKSA1 datasheet, IDH06SG60CXKSA1 pinout, IDH06SG60CXKSA1 application, or IDH06SG60CXKSA1 equivalent, key selection criteria include its absence of minority-carrier reverse recovery, surge capability (IF,SM = 32 A at TC = 25 °C), low QC/IF figure of merit, and PG-TO220-2 package compatibility with industrial thermal management requirements.

Technical Context

This SiC Schottky diode eliminates minority carrier storage, resulting in no reverse recovery time (trr) or associated switching losses. Its capacitive switching behavior is defined by QC = 8 nC and tc < 10 ns, with dv/dt ruggedness rated at 50 V/ns under 0–480 V transition.

Thermal performance is anchored by RthJC = 2.1 K/W and operation across –55 °C to +175 °C. Electrical characteristics are stable over temperature: VF = 2.1–2.3 V at 25 °C (6 A), rising to 2.8 V at 150 °C; IR remains ≤500 µA at 600 V and 150 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - supports 400 V DC-link designs with 50 % safety margin against transients
IF6 A continuous - enables compact heatsinking in space-constrained PFC modules
QC8 nC - reduces turn-off losses in hard-switched totem-pole PFC topologies
RthJC2.1 K/W - allows direct mounting to heatsink without thermal interface material degradation risk
tc<10 ns - ensures predictable, jitter-free commutation timing in MHz-range converters
VF @ 150 °C2.8 V max - maintains low conduction loss even at elevated ambient temperatures
IR @ 600 V/150 °C≤500 µA - minimizes leakage-induced standby power in offline adapters

Pinout & Package

Package: PG-TO220-2 (standard through-hole, isolated tab, screw-mountable with M3/M3.5 torque rating of 60 Ncm). Pin 1 = Cathode (C), Pin 2 = Anode (A). Tab is electrically connected to cathode and thermally coupled to junction.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Cathode)High-side return path for forward currentConnected to heatsink; must be isolated from system ground unless circuit topology requires common-cathode configuration
Pin 2 (Anode)Low-side input for forward conductionCarries full load current during on-state; routing must minimize loop inductance in high-di/dt PFC applications
Tab (Cathode)Primary thermal path and electrical cathode nodeProvides mechanical mounting and dominant heat transfer route; requires insulated washer if mounted to grounded heatsink

Key Features

FeatureDesign Value
No reverse recoveryEliminates switching loss spikes and EMI from tail current, enabling >500 kHz PFC operation
Temperature-stable VFVF increases only ~0.7 V from 25 °C to 150 °C - avoids thermal runaway in parallel configurations
High dv/dt ruggedness50 V/ns rating prevents false turn-on in fast-rising gate-drive environments (e.g., SiC MOSFET half-bridges)
Low QC/IF FoM1.33 nC/A - benchmark efficiency metric for high-frequency, high-voltage rectification
JEDEC-qualified reliabilityQualified per J-STD-020/JESD22 - validated for reflow, humidity, and temperature cycling in industrial power systems

Applications

CCM PFC RectifierSolar Inverter Boost Stage

Use Scenario: Continuous Conduction Mode Power Factor Correction in 1–3 kW server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Unidirectional high-voltage freewheeling diode in boost converter output stage.

Use Value: Enables >98 % efficiency at 230 V AC input due to zero reverse recovery loss and stable 2.8 V VF at 150 °C junction.

Use Scenario: DC-link boost diode in string inverters handling 600–1000 V PV arrays.

IC Role / Device Role / Timing Role: High-reliability, high-temperature rectifier in MPPT boost converters exposed to desert ambient conditions.

Use Value: Sustains 500 µA leakage at 600 V/150 °C, preventing energy loss in high-impedance PV strings during partial shading.

UPS Output RectificationMotor Drive Snubber Network

Use Scenario: Bidirectional line-interactive UPS with active PFC and battery backup inversion.

IC Role / Device Role / Timing Role: Input-stage rectifier handling 600 V transients during grid fault recovery.

Use Value: Withstands 190 A non-repetitive surge (10 µs) and 5.1 A²s ∫i²dt, ensuring robustness during brownout transitions.

Use Scenario: Clamp/snubber diode in IGBT-based VFDs for HVAC and industrial pumps.

IC Role / Device Role / Timing Role: Fast-recovery clamp element absorbing inductive kickback in 10–20 kHz PWM drives.

Use Value: <10 ns tc and 50 V/ns dv/dt rating prevent voltage overshoot exceeding IGBT VCE(max) during turn-off.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D06060E (Wolfspeed)Same 600 V/6 A rating; QC = 9.5 nC; RthJC = 2.3 K/W; TO-220AC package (non-isolated tab)Requires external isolation for heatsink mounting; higher QC increases turn-off loss in MHz PFCSelect when cost sensitivity outweighs thermal performance and isolation needs
STPSC6H065 (STMicroelectronics)650 V/6 A; QC = 10.5 nC; VF = 2.9 V @ 150 °C; RthJC = 2.5 K/W; TO-220ACHigher blocking voltage margin but larger conduction loss and thermal resistance reduce power densitySelect for legacy 650 V bus designs where derating is acceptable

Compared with C3D06060E and STPSC6H065, IDH06SG60CXKSA1 offers the lowest QC/IF figure of merit (1.33 nC/A), tightest VF drift over temperature, and integrated cathode-isolated tab - making it optimal for thermally constrained, high-frequency PFC and solar boost stages requiring long-term reliability without external insulation.

Availability

IDH06SG60CXKSA1 is available at Aetrix Electronics and suitable for CCM PFC rectification, solar inverter boost stages, UPS output rectification, and motor drive snubber networks requiring stable component supply across extended product lifecycles.

Supply support for IDH06SG60CXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH06SG60CXKSA1 belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, high-frequency power conversion in next-generation SMPS, solar inverters, and UPS systems.

FAQ

Is IDH06SG60CXKSA1 RoHS compliant and lead-free?

Yes. IDH06SG60CXKSA1 features Pb-free lead plating and is fully RoHS compliant per EU Directive 2011/65/EU. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements and is qualified for standard wave soldering at 260 °C for 10 seconds at 1.6 mm from case.

What is the maximum allowable junction temperature and how is it enforced?

The absolute maximum junction temperature is 175 °C, with continuous operation limited by thermal design to maintain Tj ≤ 175 °C. This is enforced via the device's RthJC = 2.1 K/W and derated IF curves - e.g., IF drops from 6 A at TC = 130 °C to 23 A surge at TC = 150 °C for 10 ms pulses.

Does IDH06SG60CXKSA1 require a gate resistor or snubber network?

No. As a Schottky diode, IDH06SG60CXKSA1 has no gate terminal and does not require gate resistors. Its capacitive switching behavior (QC = 8 nC, tc < 10 ns) eliminates need for RC snubbers in most PFC and boost applications - though layout optimization remains critical to control parasitic ringing.

Can IDH06SG60CXKSA1 be paralleled for higher current handling?

Yes, but with strict layout symmetry. Its positive VF temperature coefficient (VF rises with Tj) enables inherent current sharing. Successful paralleling requires matched trace lengths, identical thermal mounting, and shared cathode connection to avoid imbalance - verified in Infineon's application note AN2015-04 for multi-die SiC diode arrays.

IDH06SG60CXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
6A
Voltage - Forward (Vf) (Max) @ If:
2.3 V @ 6 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
50 µA @ 600 V
Capacitance @ Vr, F:
130pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-2-2
Operating Temperature - Junction:
-55°C ~ 175°C

IDH06SG60CXKSA1 FAQ

1.How can I place an order for IDH06SG60CXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH06SG60CXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH06SG60CXKSA1 reliable?

The price and inventory of IDH06SG60CXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH06SG60CXKSA1 is usually 5 days.

3.What payment methods are accepted for IDH06SG60CXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH06SG60CXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH06SG60CXKSA1?

IDH06SG60CXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH06SG60CXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH06SG60CXKSA1?

For technical support, including IDH06SG60CXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH06SG60CXKSA1 requirements.

6.How does Aetrix verify that IDH06SG60CXKSA1 is sourced from the original manufacturer or authorized distributors?

All IDH06SG60CXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH06SG60CXKSA1 meets industry standards.

7.What is the process for return or replacement of IDH06SG60CXKSA1?

All IDH06SG60CXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH06SG60CXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH06SG60CXKSA1 part is unused and in its original packaging.

Return procedure for IDH06SG60CXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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