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Infineon Technologies IDH08G65C5XKSA2
- Part No.:
- IDH08G65C5XKSA2
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
IDH08G65C5XKSA2.pdf
- Description:
- DIODE SIL CARB 650V 8A TO220-2-1
- Quantity:
- Payment:
- Shipping:
Inventory:2,176
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Product details
Overview
IDH08G65C5XKSA2 from Infineon is a 650 V, 8 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 13 nC capacitive charge at 400 V, 1.5–1.7 V forward voltage at 8 A/25°C, and rated for continuous operation up to 145°C junction temperature - deployed in high-efficiency PFC stages of industrial SMPS.
For engineers reviewing the IDH08G65C5XKSA2 datasheet, IDH08G65C5XKSA2 pinout, IDH08G65C5XKSA2 application, or IDH08G65C5XKSA2 equivalent, key selection criteria include its SiC-based zero-Qrr behavior, thermal resistance (RthJC = 1.2–2.0 K/W), surge current capability (68 A @ 10 ms, TC = 25°C), and compatibility with 650 V CoolMOS™ half-bridge topologies.
Technical Context
This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer construction to achieve lower Qc × Vf figure-of-merit and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling true zero reverse recovery and temperature-independent switching.
The device is characterized for avalanche robustness (10 ms test), qualified per JEDEC standards for power applications, and specified with guaranteed breakdown voltage (650 V at 18 mA) and dv/dt ruggedness up to 100 V/ns under dynamic blocking conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - maximum repetitive reverse voltage; enables use in 400 V AC input PFC and 600 V DC bus systems without derating |
| IF (cont) | 8 A @ TC < 145°C - continuous forward current rating defines usable conduction capacity in thermally constrained layouts |
| VF | 1.5–1.7 V @ 8 A, 25°C - low forward drop reduces conduction losses and improves system efficiency vs. Si counterparts |
| Qc | 13 nC @ VR = 400 V - capacitive charge directly impacts turn-off loss in hard-switched converters |
| RthJC | 1.2–2.0 K/W - junction-to-case thermal resistance determines heatsink sizing and thermal margin in TO-220 mounting |
| IR | 0.4–140 µA @ VR = 650 V, 25°C - leakage current remains stable across temperature, supporting reliable high-voltage hold-off |
| dv/dt | 100 V/ns - high dynamic voltage slew rate immunity prevents spurious turn-on in fast-switching bridge legs |
Pinout & Package
Package: PG-TO220-2 (2-pin variant, isolated tab). Pin 1 = Cathode (C), Pin 2 = Anode (A); Pin 3 marked "n.a." indicates non-applicable terminal - no third electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Main current exit path; electrically connected to metal tab - requires insulated mounting when tab is not grounded |
| Pin 2 | Anode | Main current entry path; sole signal-level terminal - used for PCB trace routing and gate driver referencing |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery (Qrr = 0) | Eliminates switching loss and EMI associated with minority-carrier tail current in Si diodes |
| Temperature-stable VF | Forward voltage increases only ~0.3 V from 25°C to 150°C - enables predictable loss modeling across operating range |
| High surge current rating | 68 A non-repetitive peak @ 10 ms, 25°C - withstands inrush and fault currents in UPS and solar inverters |
| RoHS-compliant Pb-free plating | Meets global environmental compliance without compromising solder joint reliability or thermal interface performance |
| Optimized for high-temp operation | Rated for continuous use at TC ≤ 145°C - supports compact, fanless designs in industrial enclosures |
Applications
| Power Factor Correction | Solar Inverter DC-Link |
|---|---|
Use Scenario: Boost-stage output rectifier in 3.7 kW telecom rectifier with 96% target efficiency. IC Role / Device Role / Timing Role: High-frequency freewheeling diode in continuous conduction mode (CCM) boost converter. Use Value: Zero Qrr eliminates reverse recovery loss, reducing MOSFET voltage overshoot and snubber requirements by >40%. | Use Scenario: DC-link clamping diode in 10 kW string inverter with 100 kHz switching frequency. IC Role / Device Role / Timing Role: Bidirectional energy recirculation path during IGBT commutation. Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during fast IGBT turn-off transients. |
| Uninterruptible Power Supply | Industrial SMPS Output Rectification |
Use Scenario: Output stage freewheeling diode in 5 kVA double-conversion UPS with 50°C ambient rating. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in LLC resonant secondary side. Use Value: 1.5 V VF at 8 A lowers conduction loss by 35% vs. Si Schottky, enabling 15°C cooler heatsink operation. | Use Scenario: Secondary-side rectifier in 2 kW server PSU with 150°C max case temperature limit. IC Role / Device Role / Timing Role: High-reliability output diode handling 100% load step with minimal thermal cycling stress. Use Value: RthJC ≤ 2.0 K/W allows direct bolt-down to aluminum chassis, eliminating thermal pad dependency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D08065E (Wolfspeed) | Same 650 V/8 A rating; VF = 1.8 V typ. @ 8 A, 25°C; Qc = 15 nC @ 400 V | Higher VF increases conduction loss in high-duty-cycle PFC; identical thermal footprint | Prefer IDH08G65C5XKSA2 where VF-limited efficiency dominates over Qc-sensitive turn-off loss |
| STPSC806D (STMicroelectronics) | 650 V/8 A; VF = 1.7 V typ.; Qc = 12 nC; RthJC = 1.5 K/W; JEDEC qualification not explicitly stated | Lacks documented avalanche testing and JEDEC qualification for industrial-grade reliability assurance | Select IDH08G65C5XKSA2 for mission-critical UPS or solar applications requiring certified ruggedness |
Compared with C3D08065E and STPSC806D, IDH08G65C5XKSA2 delivers the lowest VF in its class and full JEDEC qualification - making it optimal for thermally constrained, high-reliability PFC and inverter designs where conduction loss and long-term stability are prioritized.
Availability
IDH08G65C5XKSA2 is available at Aetrix Electronics and suitable for switch-mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for IDH08G65C5XKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDH08G65C5XKSA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ MOSFETs in high-density, high-efficiency power conversion systems.
FAQ
Is IDH08G65C5XKSA2 pin-compatible with standard TO-220AC packages?
Yes - IDH08G65C5XKSA2 uses the PG-TO220-2 outline, which matches mechanical dimensions and mounting hole positions of industry-standard TO-220AC. The isolated metal tab functions as cathode, and no third pin is present, distinguishing it from 3-pin TO-220 variants.
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies IF = 8 A is rated for TC < 145°C. Operation above this temperature reduces current capability linearly per the derating curve in Figure 1; sustained case temperatures beyond 145°C risk exceeding the 175°C maximum junction temperature even with ideal heatsinking.
Does IDH08G65C5XKSA2 require a gate resistor or snubber network?
No - as a Schottky diode, it has no gate terminal and requires no gate resistor. However, a small RC snubber (e.g., 100 Ω + 100 pF) across anode-cathode is recommended in high-di/dt applications (>100 A/µs) to damp ringing caused by stray inductance interacting with its 250–32 pF capacitance.
How is avalanche ruggedness validated for this diode?
Avalanche testing was performed per final datasheet Rev. 2.2: all units underwent 10 ms single-pulse avalanche stress at rated VRRM with controlled energy, confirming no parametric shift or catastrophic failure. This qualifies the device for unclamped inductive switching (UIS) events in real-world PFC and inverter faults.
IDH08G65C5XKSA2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 8 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 140 µA @ 650 V
- Capacitance @ Vr, F:
- 250pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2-1
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDH08G65C5XKSA2 FAQ
1.How can I place an order for IDH08G65C5XKSA2 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDH08G65C5XKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDH08G65C5XKSA2 reliable?
The price and inventory of IDH08G65C5XKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH08G65C5XKSA2 is usually 5 days.
3.What payment methods are accepted for IDH08G65C5XKSA2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH08G65C5XKSA2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDH08G65C5XKSA2?
IDH08G65C5XKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDH08G65C5XKSA2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDH08G65C5XKSA2?
For technical support, including IDH08G65C5XKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH08G65C5XKSA2 requirements.
6.How does Aetrix verify that IDH08G65C5XKSA2 is sourced from the original manufacturer or authorized distributors?
All IDH08G65C5XKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH08G65C5XKSA2 meets industry standards.
7.What is the process for return or replacement of IDH08G65C5XKSA2?
All IDH08G65C5XKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDH08G65C5XKSA2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDH08G65C5XKSA2 part is unused and in its original packaging.
Return procedure for IDH08G65C5XKSA2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDH08G65C5XKSA2 Tags
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