Infineon Technologies IDH08G65C6XKSA1

Overview

IDH08G65C6XKSA1 from Infineon is a 650 V, 8 A silicon carbide Schottky diode in PG-TO220-2 package, featuring 1.25 V forward voltage at 8 A and 25 °C, 12.2 nC capacitive charge at 400 V, and 150 V/ns dv/dt ruggedness. It serves as a high-efficiency freewheeling or output rectifier in hard-switched and high-frequency PFC stages.

For engineers reviewing the IDH08G65C6XKSA1 datasheet, IDH08G65C6XKSA1 pinout, IDH08G65C6XKSA1 application, or IDH08G65C6XKSA1 equivalent, key selection criteria include reverse recovery performance, thermal resistance (1.4–2.4 K/W), surge current capability (35 A repetitive), junction temperature range (−55 to 175 °C), and compatibility with CoolMOS™ 7-based 650 V power stages.

Technical Context

This SiC Schottky diode eliminates reverse recovery charge and associated switching losses, enabling operation at higher frequencies than silicon PN diodes. Its low Qc × VF figure of merit directly reduces conduction and switching loss trade-offs in continuous conduction mode (CCM) PFC and DC–DC converters.

The device uses a novel Schottky metal system introduced in CoolSiC™ Generation 6, delivering stable reverse leakage (<27 µA at 420 V, 125 °C) and robust dv/dt immunity (150 V/ns) without snubbers. Thermal design is supported by a validated RthJC of 1.4 K/W (typ.) and 2.4 K/W (max) for direct heatsink mounting.

Key Specifications

Pinout & Package

Package: PG-TO220-2, through-hole, isolated tab (case), 2-pin configuration with integral heatsink mounting surface. Mounting torque: 70 Ncm (M3 screw).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D08065A and STPSC8H065D, IDH08G65C6XKSA1 delivers the lowest Qc × VF (15.25 nC·V), tightest VF distribution (1.25–1.35 V), and best thermal resistance (1.4 K/W typ.), making it optimal for high-density, high-efficiency 650 V power stages where thermal headroom and EMI control are critical.

Availability

IDH08G65C6XKSA1 is available at Aetrix Electronics and suitable for power factor correction in SMPS, solar inverter DC–DC conversion, and uninterruptible power supply systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for IDH08G65C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH08G65C6XKSA1 belongs to the CoolSiC™ Generation 6 family, engineered specifically to maximize efficiency and power density in 650 V high-frequency power conversion systems while complementing CoolMOS™ 7 MOSFETs in complete power stage designs.

FAQ

Is IDH08G65C6XKSA1 pin-compatible with previous-generation CoolSiC diodes?

No. While IDH08G65C6XKSA1 uses the same PG-TO220-2 package as earlier CoolSiC G5 diodes, its internal Schottky metal system and optimized doping profile result in different forward voltage and capacitance characteristics. Layout changes are not required, but thermal and electrical simulations should be revalidated due to improved Qc × VF and reduced RthJC.

What is the maximum allowable case temperature for continuous 8 A operation?

The datasheet specifies IF = 8 A at TC ≤ 145 °C with duty cycle D = 1. Exceeding 145 °C case temperature requires derating per Figure 2 (IF = f(TC)). At TC = 150 °C, the continuous current drops to approximately 7.2 A; operation above 175 °C junction temperature violates absolute maximum ratings and risks irreversible degradation.

Does IDH08G65C6XKSA1 require a gate resistor or snubber network?

No. As a Schottky diode, IDH08G65C6XKSA1 has no gate terminal and exhibits zero reverse recovery charge. Its 150 V/ns dv/dt ruggedness eliminates the need for external snubbers in typical 650 V hard-switched applications. However, proper PCB layout (short, low-inductance paths) remains essential to maintain this immunity.

Can IDH08G65C6XKSA1 replace silicon fast recovery diodes in existing designs?

Yes, with verification. Its 650 V VRRM and TO220-2 footprint allow direct mechanical replacement. However, due to lower VF and absence of reverse recovery, MOSFET voltage overshoot may decrease, potentially altering gate drive timing margins. Thermal performance will improve, but layout parasitics and EMI filters should be rechecked to confirm compliance.