Infineon Technologies IDH09SG60CXKSA1

Overview

IDH09SG60CXKSA1 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 9 A continuous forward current at T_C < 130 °C, with zero reverse recovery charge and <10 ns switching time. It delivers temperature-independent switching behavior, 15 nC total capacitive charge, and 49 A non-repetitive surge current at 25 °C - deployed in CCM PFC stages of high-efficiency SMPS.

For engineers reviewing the IDH09SG60CXKSA1 datasheet, IDH09SG60CXKSA1 pinout, IDH09SG60CXKSA1 application, or IDH09SG60CXKSA1 equivalent, key selection criteria include its 1.3 K/W junction-to-case thermal resistance, 2.2 V forward voltage at 9 A and 150 °C, 3 µA reverse leakage at 600 V/150 °C, and absence of minority-carrier recovery - critical for high-frequency, high-temperature power conversion.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in hard-switched topologies by eliminating reverse recovery losses and enabling operation up to 175 °C junction temperature. Its unipolar conduction mechanism yields no stored charge, resulting in near-zero Q_rr, minimal EMI generation, and stable dv/dt ruggedness of 50 V/ns under 0–480 V transition.

The device uses a planar SiC junction structure optimized for low Q_C/I_F figure of merit and exhibits linear capacitance reduction from 280 pF at 1 V to 35 pF at 300 V and 600 V (1 MHz), supporting resonant and soft-switching designs without snubbers.

Key Specifications

Pinout & Package

Package: PG-TO220-2 - insulated case, single-side heat transfer, M3/M3.5 screw-mount compatible, lead-free and RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D09060A and STPSC9H06D, IDH09SG60CXKSA1 offers the lowest thermal resistance (1.3 K/W) and tightest V_F spec (2.2 V @ 150 °C), making it optimal for thermally constrained, high-reliability industrial and EV charging systems requiring long-term stability at 175 °C.

Availability

IDH09SG60CXKSA1 is available at Aetrix Electronics and suitable for industrial UPS output stages, solar string inverter boost converters, and server PSU CCM PFC circuits requiring stable component supply, long-lifecycle support, and guaranteed RoHS-compliant manufacturing.

Supply support for IDH09SG60CXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

IDH09SG60CXKSA1 belongs to the thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-temperature power conversion in next-generation PFC, solar, and UPS systems where zero-recovery loss and thermal robustness are mandatory.

FAQ

Is IDH09SG60CXKSA1 pin-compatible with standard silicon TO-220 fast recovery diodes?

No. While it shares the PG-TO220-2 outline, its cathode (Pin 1) is electrically connected to the metal tab - unlike most silicon diodes where the anode or case is isolated. This requires PCB layout revision to ensure proper heatsink isolation and avoid short-circuiting the cathode to ground.

What is the maximum allowable soldering temperature for IDH09SG60CXKSA1?

The device is qualified for wave soldering only at leads, with a maximum temperature of 260 °C applied 1.6 mm (0.063 in.) from the case for 10 seconds. Reflow soldering is not recommended due to thermal stress on the SiC die and internal wire bonds.

Does IDH09SG60CXKSA1 require a gate resistor or snubber network?

No. As a unipolar Schottky diode with no minority carrier storage, it has no reverse recovery tail and negligible stored charge. Snubbers are unnecessary unless managing external circuit parasitics; gate resistors are irrelevant since it has no gate terminal.

How does the 15 nC capacitive charge (Q_C) impact system-level EMI?

Q_C determines the displacement current magnitude during voltage transitions. At 100 kHz and 400 V/ns dv/dt, the resulting i_C = Q_C × dv/dt ≈ 6 mA - low enough to avoid significant common-mode noise, provided layout minimizes loop area and uses symmetric routing to suppress differential-mode radiation.