Infineon Technologies IDH10S120AKSA1

Overview

IDH10S120AKSA1 from Infineon Technologies is a silicon carbide (SiC) Schottky diode rated for 1200 V blocking voltage and 10 A average forward current in a TO-220AC-2L package. It features zero reverse recovery charge (Qrr = 0), low forward voltage drop (VF = 1.5 V at 10 A), and operates up to 175 °C junction temperature. It is used in high-efficiency PFC stages of industrial AC-DC power supplies.

For engineers reviewing the IDH10S120AKSA1 datasheet, IDH10S120AKSA1 pinout, IDH10S120AKSA1 application, or IDH10S120AKSA1 equivalent, key selection criteria include unipolar conduction behavior, thermal robustness under repetitive surge conditions, SiC-specific gate drive independence, and compatibility with hard-switched 65–100 kHz boost topologies.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and Si-based MOSFET body diodes in high-frequency switching converters. Its majority-carrier conduction eliminates minority-carrier storage delay and associated switching losses, enabling operation without snubbers in many designs.

The device exhibits soft reverse recovery, negligible temperature dependence of VF, and stable capacitance (Cj = 340 pF at VR = 0 V). Its TO-220AC-2L package provides direct anode-cathode terminal access with isolated mounting hole for heatsink integration.

Key Specifications

Pinout & Package

Package: TO-220AC-2L - 2-pin through-hole package with isolated mounting flange, standard footprint for mechanical interchangeability with legacy rectifiers.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and STPSC10H12D, IDH10S120AKSA1 uniquely delivers 1200 V capability with lowest VF in its class, enabling higher efficiency in single-device 1000 V PFC without series stacking or thermal penalty.

Availability

IDH10S120AKSA1 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, solar inverter boost stages, and EV onboard charger PFC circuits requiring stable component supply and long-term lifecycle support.

Supply support for IDH10S120AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy applications.

IDH10S120AKSA1 belongs to Infineon's CoolSiC™ family, engineered specifically for high-voltage, high-frequency power conversion where zero Qrr and thermal resilience are critical.

FAQ

Is IDH10S120AKSA1 suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of forward voltage ensures natural current sharing without external balancing components. Parallel operation has been validated up to four devices in 3 kW PFC designs with <5% current imbalance at full load and 125 °C case temperature.

Does IDH10S120AKSA1 require a gate driver?

No - it is a two-terminal uncontrolled diode with no gate terminal. Unlike SiC MOSFETs, it conducts automatically when forward biased and blocks when reverse biased, eliminating gate drive complexity and associated layout constraints.

What is the maximum recommended soldering temperature for TO-220AC-2L mounting?

The maximum peak soldering temperature is 260 °C for 10 seconds per J-STD-020. Reflow profiles must limit time above 217 °C to ≤60 seconds. Mechanical stress on leads during soldering must be avoided to prevent internal bond wire damage.

Can IDH10S120AKSA1 replace a silicon fast recovery diode in an existing design?

Yes - its TO-220AC-2L footprint and pinout match standard Si FRDs. However, layout review is required to confirm reduced snubber needs and verify that thermal interface materials accommodate higher thermal conductivity demands of SiC's lower RthJC (1.2 K/W).