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Infineon Technologies IDH10SG60CXKSA1
- Part No.:
- IDH10SG60CXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
IDH10SG60CXKSA1.pdf
- Description:
- DIODE SIL CARB 600V 10A TO220-2
- Quantity:
- Payment:
- Shipping:
Inventory:2,590
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Product details
Overview
IDH10SG60CXKSA1 from Infineon Technologies is a 3rd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 10 A continuous forward current at TC < 130 °C, with zero reverse recovery charge and <10 ns capacitive switching time. It operates reliably from –55 °C to +175 °C junction temperature and is optimized for high-efficiency CCM PFC stages in server PSUs.
For engineers reviewing the IDH10SG60CXKSA1 datasheet, IDH10SG60CXKSA1 pinout, IDH10SG60CXKSA1 application, or IDH10SG60CXKSA1 equivalent, key selection criteria include its 1.25 K/W junction-to-case thermal resistance, 16 nC total capacitive charge, absence of minority-carrier reverse recovery, 2.2 V forward voltage at 10 A/150 °C, and PG-TO220-2 package with isolated case.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-temperature switching applications by eliminating reverse recovery losses and enabling operation up to 175 °C junction temperature. Its dv/dt ruggedness of 50 V/ns and surge capability of 410 A (10 µs) support robust performance in hard-switched topologies.
The device exhibits temperature-independent switching behavior due to majority-carrier conduction, with total capacitance dropping from 290 pF at 1 V to 40 pF at 300 V and 600 V reverse bias. Its figure-of-merit QC/IF is minimized at 1.6 nC/A, confirming low-loss operation under high di/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - supports 400 V DC-link designs with 50% voltage margin for transient clamping |
| IF (cont) | 10 A @ TC < 130 °C - enables compact heatsinking in space-constrained PFC modules |
| VF | 2.2 V @ 10 A, 150 °C - reduces conduction loss vs. Si diodes in high-temp industrial environments |
| QC | 16 nC - defines capacitive turn-off energy; enables >1 MHz switching without excessive EMI |
| RthJC | 1.25 K/W - allows direct mounting to heatsink with predictable thermal path for thermal design |
| tc | <10 ns - capacitive time constant governing di/dt-induced displacement current, not trr |
| IR | 3.3 µA @ 600 V, 150 °C - ensures low leakage in high-voltage hold-off during standby |
Pinout & Package
Package: PG-TO220-2 - thermally enhanced plastic package with electrically isolated metal tab (case), designed for screw-mounting (M3/M3.5, 60 Ncm torque) and wave-soldering at leads only (260 °C, 10 s, 1.6 mm from case).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Anode) | Anode connection | Low-inductance copper lead bonded directly to SiC die; carries full forward current path |
| Pin 2 (Cathode) | Cathode connection | Connected to isolated metal tab; serves as primary heat transfer surface and high-current return |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Zero Qrr and trr - eliminates switching loss and EMI associated with minority carrier tail current |
| Temperature-stable switching | Capacitive switching time tc invariant across –55 °C to +175 °C - enables consistent timing in wide-temp systems |
| High surge robustness | 410 A non-repetitive peak forward current (10 µs) - withstands inrush and fault currents in UPS and motor drives |
| Low stored energy | 8 µJ capacitive energy at 400 V - reduces turn-off voltage overshoot and snubber requirements |
| JEDEC-qualified reliability | Qualified per J-STD-20/JESD22 - validated for reflow, humidity, and temperature cycling in industrial power applications |
Applications
| Server Power Supply PFC Stage | Solar Inverter DC-Link |
|---|---|
Use Scenario: Continuous Conduction Mode (CCM) boost PFC in 3 kW telecom rectifiers operating at 100 kHz switching frequency and 150 °C ambient. IC Role / Device Role / Timing Role: High-voltage, high-frequency freewheeling diode replacing Si FRD to eliminate reverse recovery loss and reduce heatsink size. Use Value: Enables >98.5% PFC efficiency at full load with 30% lower conduction + switching loss versus 600 V Si diode. | Use Scenario: DC-link clamping and freewheeling in 10 kW string inverters exposed to desert ambient temperatures up to 65 °C. IC Role / Device Role / Timing Role: Bidirectional voltage clamp and unidirectional current path in H-bridge output stage with 1200 V IGBTs. Use Value: Maintains stable 600 V blocking and <2.3 V VF at 150 °C, preventing thermal runaway during sustained overvoltage events. |
| Industrial UPS Rectifier | EV Onboard Charger Boost Stage |
Use Scenario: Input rectification and regeneration path in double-conversion 50 kVA UPS with 10 ms ride-through requirement. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode in IGBT-based active front-end (AFE) rectifier with regenerative braking. Use Value: Withstands 44 A surge (10 ms) at 150 °C and delivers 50 V/ns dv/dt immunity, ensuring reliable commutation during grid faults. | Use Scenario: Boost diode in 11 kW OBC operating at 200 kHz with liquid-cooled heatsink and 125 °C case temperature. IC Role / Device Role / Timing Role: High-efficiency unidirectional current path in interleaved dual-phase boost converter feeding 400–800 V battery stack. Use Value: Achieves 1.6 nC/A figure-of-merit, reducing capacitive turn-off loss by 65% versus comparable SiC diodes in same package. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D10065A (Wolfspeed) | 650 V VRRM, 10 A IF, RthJC = 1.3 K/W, QC = 18 nC | Higher voltage rating suits 450 V DC-link systems; slightly higher QC increases turn-off loss at >500 kHz | Select when 650 V margin required or when sourcing from Wolfspeed-dedicated supply chain |
| STPSC1006D (STMicroelectronics) | 600 V VRRM, 10 A IF, RthJC = 1.4 K/W, QC = 17.5 nC | Lower dv/dt ruggedness (35 V/ns); requires stronger gate drive coupling in hard-switched IGBT circuits | Prefer for cost-sensitive solar microinverters where 50 V/ns immunity is not critical |
Compared with C3D10065A and STPSC1006D, IDH10SG60CXKSA1 offers superior dv/dt immunity and lowest QC/IF ratio, making it optimal for high-di/dt, high-frequency PFC and UPS applications demanding minimal EMI and thermal margin.
Availability
IDH10SG60CXKSA1 is available at Aetrix Electronics and suitable for server power supplies, solar inverters, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified reliability.
Supply support for IDH10SG60CXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and security solutions, headquartered in Munich.
IDH10SG60CXKSA1 belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, high-frequency AC-DC and DC-DC conversion in industrial and renewable energy systems.
FAQ
Is IDH10SG60CXKSA1 pin-compatible with standard TO-220AC diodes?
No. IDH10SG60CXKSA1 uses the PG-TO220-2 outline, which features an electrically isolated metal tab and different lead spacing than TO-220AC. Mounting requires M3/M3.5 screws and isolation washers; PCB footprint must match Infineon's specified dimensions (Rev. 2.4, page 6).
Does this diode require a gate resistor or driver circuit?
No. As a passive Schottky diode, IDH10SG60CXKSA1 has no gate terminal and requires no external drive circuitry. It conducts when forward-biased and blocks when reverse-biased, with switching governed solely by circuit di/dt and voltage slew rate.
What is the maximum allowable case temperature during continuous operation?
The maximum continuous case temperature is 130 °C, beyond which the rated 10 A forward current must be derated linearly to zero at 175 °C junction temperature. Thermal design must ensure RthJC × (TC − Tj) ≤ 120 W dissipation limit.
Can IDH10SG60CXKSA1 replace silicon diodes in existing designs without layout changes?
Not without validation. While it fits the same PG-TO220-2 footprint, its zero Qrr eliminates snubber networks but increases di/dt stress on adjacent switches. Layout must minimize parasitic inductance, and gate drive strength may need adjustment to manage faster voltage transients.
IDH10SG60CXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 2.1 V @ 10 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 90 µA @ 600 V
- Capacitance @ Vr, F:
- 290pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDH10SG60CXKSA1 FAQ
1.How can I place an order for IDH10SG60CXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDH10SG60CXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDH10SG60CXKSA1 reliable?
The price and inventory of IDH10SG60CXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH10SG60CXKSA1 is usually 5 days.
3.What payment methods are accepted for IDH10SG60CXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH10SG60CXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDH10SG60CXKSA1?
IDH10SG60CXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDH10SG60CXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDH10SG60CXKSA1?
For technical support, including IDH10SG60CXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH10SG60CXKSA1 requirements.
6.How does Aetrix verify that IDH10SG60CXKSA1 is sourced from the original manufacturer or authorized distributors?
All IDH10SG60CXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH10SG60CXKSA1 meets industry standards.
7.What is the process for return or replacement of IDH10SG60CXKSA1?
All IDH10SG60CXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH10SG60CXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDH10SG60CXKSA1 part is unused and in its original packaging.
Return procedure for IDH10SG60CXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDH10SG60CXKSA1 Tags
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