Infineon Technologies IDH12G65C6XKSA1

Overview

IDH12G65C6XKSA1 from Infineon is a 650 V, 12 A silicon carbide Schottky diode in PG-TO220-2 package, optimized for high-frequency PFC and solar inverter applications. It delivers VF = 1.25 V at 12 A/25 °C, Qc = 17.1 nC at 400 V, and dv/dt ruggedness of 150 V/ns. Its figure of merit (Qc × VF) enables superior efficiency across full load range.

For engineers reviewing the IDH12G65C6XKSA1 datasheet, IDH12G65C6XKSA1 pinout, IDH12G65C6XKSA1 application, or IDH12G65C6XKSA1 equivalent, key selection criteria include forward voltage stability over temperature, reverse recovery charge under high di/dt, thermal resistance (RthJC = 1.1–1.9 K/W), and industrial-grade JEDEC qualification per J-STD-20/JESD22.

Technical Context

This SiC Schottky diode operates with zero reverse recovery charge and no minority carrier storage, eliminating switching losses in hard-switched topologies. Its novel Schottky metal system reduces barrier height variation, enabling stable VF across junction temperatures from −55 °C to 175 °C.

The device is rated for repetitive peak reverse voltage of 650 V and surge non-repetitive forward current up to 64 A (10 ms, TC = 25 °C). Its low RthJC (1.1 K/W typ.) supports high-power density designs when mounted with M3 screws at 70 Ncm torque.

Key Specifications

Pinout & Package

Package: PG-TO220-2, through-hole, isolated tab (cathode-connected case), M3 mounting screw, 70 Ncm torque specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D12065A and SS12065, IDH12G65C6XKSA1 offers the lowest VF and best Qc×VF trade-off, validated for industrial temperature cycling and humidity exposure-making it optimal for mission-critical, high-reliability PFC and inverter applications demanding >100,000-hour MTBF.

Availability

IDH12G65C6XKSA1 is available at Aetrix Electronics and suitable for power factor correction in SMPS, solar inverter DC-link clamping, and uninterruptible power supply (UPS) output rectification requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified industrial reliability.

Supply support for IDH12G65C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDH12G65C6XKSA1 belongs to the CoolSiC™ 6th Generation family, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial, solar, and server power systems.

FAQ

Is IDH12G65C6XKSA1 pin-compatible with previous-generation CoolSiC diodes?

No. While sharing the PG-TO220-2 outline, IDH12G65C6XKSA1 uses a revised internal die layout and Schottky metallization that alters thermal and electrical parasitics. Pin assignment remains identical (cathode case, anode lead), but layout-dependent parameters like RthJC and Qc differ significantly from Gen5 devices-requiring revalidation in existing designs.

What is the maximum allowable case temperature for continuous 12 A operation?

The datasheet specifies IF = 12 A at TC ≤ 140 °C with duty cycle D = 1. Exceeding 140 °C case temperature violates the absolute maximum rating and risks accelerated degradation. For reliable 12 A continuous operation, heatsink design must maintain TC ≤ 140 °C under worst-case ambient and airflow conditions.

Does IDH12G65C6XKSA1 require a gate resistor or snubber network?

No. As a Schottky diode, it has no gate terminal and exhibits no reverse recovery. However, a small RC snubber (e.g., 100 Ω + 100 pF) may be used across anode–cathode in ultra-fast switching topologies (>300 kHz) to damp high-frequency ringing caused by stray inductance and junction capacitance-though not required for basic functionality or reliability.

Can IDH12G65C6XKSA1 be used in parallel configurations?

Yes, but only with careful thermal and layout symmetry. The positive VF temperature coefficient (VF increases with Tj) provides inherent current sharing, but mismatched thermal paths or lead inductance can cause imbalance. Parallel operation requires matched heatsinking, identical PCB trace lengths, and individual Kelvin sensing if precision current sharing is critical.