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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDH12S60CAKSA1

Name: IDH12S60CAKSA1
Brand: Infineon Technologies
SKU: IDH12S60CAKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDH12S60CAKSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDH12S60CAKSA1.pdf

Description:: DIODE SIL CARB 600V 12A TO220-2

Quantity:: RFQ Add To RFQ list

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Inventory:8,966

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Product details

Overview

IDH12S60CAKSA1 from Infineon Technologies is a 2nd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V DC blocking voltage and 12 A continuous forward current, with zero reverse recovery charge (Q_c = 30 nC), no minority-carrier switching behavior, and thermal stability up to 175 °C junction temperature-designed for high-efficiency CCM PFC stages in industrial power supplies.

For engineers reviewing the IDH12S60CAKSA1 datasheet, IDH12S60CAKSA1 pinout, IDH12S60CAKSA1 application, or IDH12S60CAKSA1 equivalent, key selection criteria include its 1.5–2.1 V forward voltage range across temperature, 50 V/ns dv/dt ruggedness, 1.3 K/W junction-to-case thermal resistance, and PG-TO220-2 package suitability for forced-air or heatsink-mounted high-power rectification.

Technical Context

This SiC Schottky diode operates without minority carrier storage, eliminating reverse recovery time (trr) and associated switching losses. Its capacitive switching behavior is defined by Q_c = 30 nC and t_c < 10 ns, independent of junction temperature, load current, or di/dt.

Rated for 600 V repetitive peak reverse voltage and 98 A non-repetitive surge current (10 ms sine half-wave), it maintains stable V_F and I_R across –55 °C to 175 °C, with reverse leakage capped at 1600 µA at 150 °C and 600 V.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports 400 V AC input PFC designs with 50% safety margin against line surges
I_F	12 A continuous - enables compact 1–2 kW CCM boost converters without parallel devices
Q_c	30 nC - reduces turn-off loss in high-frequency (>100 kHz) PFC controllers by >90% vs. Si FRD
R_thJC	1.3 K/W - allows direct mounting to heatsink with ≤15 W dissipation at ΔT = 20 K
dv/dt	50 V/ns - withstands fast voltage transients in motor drive inverter legs without snubbers
V_F @ 12 A, 150 °C	1.7–2.1 V - ensures predictable conduction loss under full-load thermal stress
I_R @ 600 V, 150 °C	6–1600 µA - low leakage preserves efficiency in high-temperature enclosed enclosures

Pinout & Package

PG-TO220-2 package with isolated metal tab (case), thermally and electrically connected to cathode (Pin 1). Anode (Pin 2) is leaded for PCB through-hole mounting. Mounting torque: 60 mNm for M3/M3.5 screws.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Cathode	Electrically and thermally active surface - must be insulated from chassis unless referenced to system ground
Pin 2	Anode	Input terminal for forward current path - routed with low-inductance layout to minimize switching overshoot

Key Features

Feature	Design Value
No reverse recovery	Eliminates trr-related EMI and shoot-through risk in synchronous rectifier or totem-pole PFC
Temperature-stable switching	Q_c and t_c invariant with T_j, enabling consistent timing in digital control loops
High dv/dt ruggedness	50 V/ns rating avoids false triggering of gate drivers during hard-switching transitions
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for industrial motor drives and power supply applications
Pb-free, RoHS-compliant plating	Enables compliance with EU RoHS Directive 2011/65/EU without post-process rework

Applications

Industrial CCM PFC

Motor Drive Inverter

Use Scenario: 3.3 kW single-phase boost converter operating at 100 kHz with 98.5% peak efficiency.

IC Role / Device Role / Timing Role: Fast-recovery output rectifier replacing Si FRD to eliminate reverse recovery loss and reduce heatsink size by 40%.

Use Value: Enables higher switching frequency without efficiency penalty, reducing magnetics volume and system weight.

Use Scenario: 7.5 kW 3-phase VFD with regenerative braking and 1200 V DC bus.

IC Role / Device Role / Timing Role: Freewheeling diode across IGBTs in inverter leg, clamping inductive kickback with <10 ns capacitive response.

Use Value: Prevents overvoltage failure during rapid current reversal, improving system MTBF by eliminating snubber networks.

Solar Microinverter

EV Onboard Charger

Use Scenario: 300 W microinverter with dual-stage topology (DC-DC + DC-AC), ambient T_a up to 65 °C.

IC Role / Device Role / Timing Role: High-voltage output diode in interleaved flyback stage, handling 450 V DC link and 15 A peak current.

Use Value: Maintains <2.1 V V_F at 150 °C, limiting conduction loss rise to <12% vs. room temperature.

Use Scenario: 6.6 kW bidirectional OBC with GaN-based AC-DC and SiC-based DC-DC stages.

IC Role / Device Role / Timing Role: Secondary-side rectifier in CLLC resonant DC-DC, operating at 300–500 kHz with zero-voltage switching.

Use Value: Delivers 30 nC Q_c for precise soft-switching boundary control, reducing RMS current stress on primary switches.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10060A	10 A rating, same 600 V, TO-220-2 package, Q_c = 25 nC, R_thJC = 1.5 K/W	Lower current capacity limits use in >1.5 kW PFC; tighter Q_c benefits ultra-high-frequency designs	Select when thermal margin permits lower I_F and board space favors identical footprint
SS12060	12 A, 600 V, TO-220AC package, V_F = 1.8–2.3 V @ 150 °C, Q_c = 35 nC	Higher V_F increases conduction loss by ~8% at full load; larger case improves heatsinking but requires different mounting	Prefer where mechanical robustness or legacy heatsink compatibility outweighs 0.2 V V_F penalty

Compared with C3D10060A and SS12060, IDH12S60CAKSA1 delivers optimal balance of 12 A current headroom, 30 nC charge, and 1.3 K/W thermal resistance-making it the preferred choice for thermally constrained, high-power-density CCM PFC and inverter freewheeling applications.

Availability

IDH12S60CAKSA1 is available at Aetrix Electronics and suitable for industrial CCM PFC, motor drive inverters, solar microinverters, and EV onboard chargers requiring stable component supply with guaranteed long-term manufacturability.

Supply support for IDH12S60CAKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, automotive MCUs, and security ICs, headquartered in Munich.

IDH12S60CAKSA1 belongs to Infineon's thinQ!™ 2nd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-reliability switching in industrial and renewable energy systems.

FAQ

Is IDH12S60CAKSA1 pin-compatible with standard silicon rectifiers in TO-220-2 packages?

No. While the PG-TO220-2 outline matches mechanical dimensions of legacy TO-220AC, the cathode-isolated metal tab requires insulation from heatsinks unless explicitly grounded. Silicon rectifiers often tie the tab to cathode internally, whereas IDH12S60CAKSA1's tab is cathode-connected but electrically isolated from mounting hardware-requiring dielectric pads or shoulder washers.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies I_F derating begins at T_C = 140 °C, with absolute maximum T_C = 175 °C. For reliable 12 A continuous operation, maintain T_C ≤ 100 °C using a heatsink with ≤1.3 K/W thermal resistance, verified via thermal imaging or thermocouple measurement at the tab center.

Does IDH12S60CAKSA1 require a gate resistor or snubber network?

No. As a Schottky diode with no minority carriers, it has no turn-on/turn-off delay or reverse recovery tail. However, a small RC snubber (e.g., 100 Ω + 100 pF) across anode–cathode may suppress high-frequency ringing caused by stray inductance in high-di/dt layouts-especially in motor drive freewheeling paths.

How is avalanche capability validated for this part?

All units undergo 5 ms avalanche stress testing at 5 mA per JEDEC JESD22-A106, confirming robustness under transient overvoltage. This is distinct from unclamped inductive switching (UIS) rating; the device is not rated for repeated avalanche operation-designs must ensure V_R never exceeds 600 V under worst-case conditions.

IDH12S60CAKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 12A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 12 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 160 µA @ 600 V

Capacitance @ Vr, F:: 530pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-2

Operating Temperature - Junction:: -55°C ~ 175°C

IDH12S60CAKSA1 FAQ

1.How can I place an order for IDH12S60CAKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH12S60CAKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH12S60CAKSA1 reliable?

The price and inventory of IDH12S60CAKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH12S60CAKSA1 is usually 5 days.

3.What payment methods are accepted for IDH12S60CAKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH12S60CAKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH12S60CAKSA1?

IDH12S60CAKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH12S60CAKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH12S60CAKSA1?

For technical support, including IDH12S60CAKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH12S60CAKSA1 requirements.

6.How does Aetrix verify that IDH12S60CAKSA1 is sourced from the original manufacturer or authorized distributors?

All IDH12S60CAKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH12S60CAKSA1 meets industry standards.

7.What is the process for return or replacement of IDH12S60CAKSA1?

All IDH12S60CAKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH12S60CAKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH12S60CAKSA1 part is unused and in its original packaging.

Return procedure for IDH12S60CAKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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