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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDH12SG60CXKSA1

Name: IDH12SG60CXKSA1
Brand: Infineon Technologies
SKU: IDH12SG60CXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDH12SG60CXKSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDH12SG60CXKSA1.pdf

Description:: DIODE SIL CARB 600V 12A TO220-2

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Product details

Overview

IDH12SG60CXKSA1 from Infineon Technologies is a 3rd-generation silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 12 A continuous forward current at T_C < 130 °C, with zero reverse recovery charge and <10 ns switching time-designed for high-efficiency CCM PFC stages in industrial SMPS.

For engineers reviewing the IDH12SG60CXKSA1 datasheet, IDH12SG60CXKSA1 pinout, IDH12SG60CXKSA1 application, or IDH12SG60CXKSA1 equivalent, key selection criteria include its 1.2 K/W junction-to-case thermal resistance, 19 nC total capacitive charge, temperature-independent switching behavior, and PG-TO220-2 package with isolated case.

Technical Context

This SiC Schottky diode eliminates minority carrier injection, resulting in no reverse recovery time (t_rr) and no forward recovery loss-enabling operation up to 175 °C junction temperature with stable V_F (2.2 V @ 12 A, 150 °C) and low leakage (4 µA @ 600 V, 150 °C). Its dv/dt ruggedness of 50 V/ns supports robust gate drive coupling in fast-switching half-bridges.

The device uses a planar SiC junction with optimized edge termination for 600 V breakdown, validated under avalanche stress (20 mA, 10 ms), and features a low Q_C/I_F figure of merit critical for high-frequency PFC designs operating above 100 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - Enables use in 400 V DC-link PFC and 3-phase rectifier front-ends without derating.
I_F (cont.)	12 A @ T_C < 130 °C - Supports 1–2 kW power stages with standard heatsinking.
V_F	2.2 V @ 12 A, 150 °C - Low conduction loss maintained across full operating temperature range.
Q_C	19 nC - Minimizes capacitive turn-on loss in hard-switched totem-pole PFC topologies.
R_thJC	1.2 K/W - Allows direct mounting to heatsink with predictable thermal path for thermal design.
t_c	<10 ns - Confirmed capacitive time constant; enables >500 kHz switching without recovery-related EMI.
I_R	4 µA @ 600 V, 150 °C - Enables stable blocking in high-temperature solar inverter environments.

Pinout & Package

Package: PG-TO220-2 (isolated case, screw-mountable, M3/M3.5 compatible), with copper tab thermally and electrically connected to cathode.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Cathode (K)	Electrically and thermally active surface; must be insulated from chassis unless referenced to system ground.
Pin 2 (Lead)	Anode (A)	Single wire-bonded anode terminal; designed for low-inductance PCB layout with short trace routing.

Key Features

Feature	Design Value
No reverse recovery (t_rr = 0)	Eliminates switching tail current and associated losses in hard-switched converters.
Temperature-independent switching	Capacitive switching time t_c remains stable from –55 °C to 175 °C-no timing drift in thermal cycling.
High surge capability	59 A non-repetitive surge (10 ms, 25 °C) supports inrush and fault-current handling in UPS systems.
Low Q_C/I_F FoM	19 nC / 12 A = 1.58 nC/A - industry-leading figure of merit for 600 V SiC diodes in high-frequency PFC.
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 for automotive and industrial applications with 100% avalanche testing.

Applications

Industrial SMPS CCM PFC

Solar Inverter DC-Link

Use Scenario: Continuous Conduction Mode (CCM) boost PFC stage in 1.5–2 kW server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Fast-recovery output diode replacing Si FRDs to reduce conduction + switching losses by >30%.

Use Value: Enables >98.5% efficiency at 100 kHz switching with reduced heatsink volume and EMI filter size.

Use Scenario: DC-link freewheeling diode in string inverters handling 600–1000 V PV arrays.

IC Role / Device Role / Timing Role: High-voltage, high-temperature blocking diode in H-bridge output stage during reactive power flow.

Use Value: Maintains <4 µA leakage at 150 °C ambient, preventing thermal runaway in enclosed rooftop enclosures.

UPS Output Rectification

Motor Drive Snubber Network

Use Scenario: Output rectification in double-conversion online UPS systems with 400 V DC bus.

IC Role / Device Role / Timing Role: Low-loss freewheeling path during battery backup mode with frequent load transients.

Use Value: Withstands 430 A non-repetitive surge (10 µs) during short-circuit events without degradation.

Use Scenario: RC snubber diode across IGBTs in 7.5–15 kW variable frequency drives.

IC Role / Device Role / Timing Role: Clamp diode absorbing inductive energy during IGBT turn-off with minimal stored charge.

Use Value: Q_C = 19 nC reduces snubber capacitor stress and allows smaller R-C component values.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D12060A	Same 600 V/12 A rating; TO-220AC package (non-isolated case); R_thJC = 1.3 K/W; Q_C = 21 nC.	Requires external isolation for heatsink mounting; slightly higher Q_C increases turn-on loss in >200 kHz designs.	Select when cost sensitivity outweighs thermal isolation needs and board-level creepage is controlled.
STPSC1206D	600 V/12 A; D²PAK package; R_thJC = 1.5 K/W; Q_C = 23 nC; higher I_R (10 µA @ 150 °C).	Surface-mount format limits power density; higher leakage reduces reliability in high-temp solar deployments.	Prefer for space-constrained SMT layouts where thermal margin permits and leakage is not mission-critical.

Compared with C3D12060A and STPSC1206D, IDH12SG60CXKSA1 offers superior thermal interface (isolated TO220-2), lowest Q_C, and tightest high-temperature leakage-making it optimal for thermally demanding, high-reliability industrial PFC and UPS designs.

Availability

IDH12SG60CXKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, and UPS systems requiring stable component supply with long-term lifecycle assurance and RoHS-compliant sourcing.

Supply support for IDH12SG60CXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDH12SG60CXKSA1 belongs to Infineon's thinQ!™ 3rd-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-temperature power conversion where zero-recovery performance and thermal robustness are mandatory.

FAQ

Is IDH12SG60CXKSA1 pin-compatible with standard silicon rectifiers in TO-220 packages?

No. While mechanically compatible with TO-220 footprints, IDH12SG60CXKSA1 has an isolated case (PG-TO220-2) where the tab is the cathode-not the case-requiring electrical isolation from heatsinks unless explicitly grounded. Standard silicon rectifiers often use conductive cases tied to cathode or anode.

What is the maximum recommended mounting torque for the screw terminals?

The maximum mounting torque for M3 and M3.5 screws is 60 N·cm, as specified in the official Infineon datasheet Rev. 2.3. Exceeding this value risks mechanical damage to the package or compromised thermal interface integrity.

Does IDH12SG60CXKSA1 require a gate resistor or snubber network?

No. As a Schottky diode with no minority carriers, it requires no gate resistor. However, a small RC snubber (e.g., 100 Ω + 100 pF) may still be used across anode–cathode to damp high-frequency ringing caused by stray inductance in high-di/dt layouts.

Can IDH12SG60CXKSA1 be used in parallel configurations?

Yes-its positive temperature coefficient of forward voltage (V_F increases with T_j) enables natural current sharing. Parallel operation requires matched layout symmetry, identical thermal paths, and individual current-sense verification; Infineon recommends ≤2 devices in parallel without active balancing.

IDH12SG60CXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-220-2

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 12A

Voltage - Forward (Vf) (Max) @ If:: 2.1 V @ 12 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 100 µA @ 600 V

Capacitance @ Vr, F:: 310pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2-2

Operating Temperature - Junction:: -55°C ~ 175°C

IDH12SG60CXKSA1 FAQ

1.How can I place an order for IDH12SG60CXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDH12SG60CXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDH12SG60CXKSA1 reliable?

The price and inventory of IDH12SG60CXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDH12SG60CXKSA1 is usually 5 days.

3.What payment methods are accepted for IDH12SG60CXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDH12SG60CXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDH12SG60CXKSA1?

IDH12SG60CXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDH12SG60CXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDH12SG60CXKSA1?

For technical support, including IDH12SG60CXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDH12SG60CXKSA1 requirements.

6.How does Aetrix verify that IDH12SG60CXKSA1 is sourced from the original manufacturer or authorized distributors?

All IDH12SG60CXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDH12SG60CXKSA1 meets industry standards.

7.What is the process for return or replacement of IDH12SG60CXKSA1?

All IDH12SG60CXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDH12SG60CXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDH12SG60CXKSA1 part is unused and in its original packaging.

Return procedure for IDH12SG60CXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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