Infineon Technologies IDK02G65C5XTMA2

Overview

IDK02G65C5XTMA2 from Infineon is a 650 V, 2 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 4 nC capacitive charge at 400 V, and 1.5–2.2 V forward voltage across −55°C to 150°C. It operates reliably up to 175°C junction temperature and delivers high surge current capability (23 A, 10 ms) for power factor correction and solar inverter front-end rectification.

For engineers reviewing the IDK02G65C5XTMA2 datasheet, IDK02G65C5XTMA2 pinout, IDK02G65C5XTMA2 application, or IDK02G65C5XTMA2 equivalent, key selection criteria include its SiC-specific thermal stability, absence of reverse recovery loss, low Qc × Vf figure of merit, and compatibility with 650 V CoolMOS™ half-bridge topologies in high-frequency SMPS designs.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower thermal resistance (R_thJC = 2.6 K/W typ.) and improved efficiency across load conditions. Its unipolar conduction eliminates minority-carrier storage, enabling operation at >100 V/ns dv/dt without snubbers.

The device is characterized for stable switching behavior over −55°C to 175°C, with reverse leakage tightly bounded (≤240 µA at 650 V, 150°C) and forward voltage exhibiting minimal temperature drift-1.8 V at 25°C rising only to 2.2 V at 150°C under 2 A DC.

Key Specifications

Pinout & Package

Package: PG-TO263-2 (D²PAK), surface-mount, copper-tab cathode, RoHS-compliant lead finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D02065E and STPSC2H065, IDK02G65C5XTMA2 offers the lowest Qc × Vf product among 2 A 650 V SiC diodes in D²PAK, delivering superior efficiency in high-frequency PFC and inverter applications where thermal management is constrained.

Availability

IDK02G65C5XTMA2 is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC link, and uninterruptible power supply applications requiring stable component supply, JEDEC-qualified reliability, and high-temperature operational continuity.

Supply support for IDK02G65C5XTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

IDK02G65C5XTMA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power stages in high-efficiency, high-power-density AC/DC and DC/AC conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDK02G65C5XTMA2 supports continuous operation up to 175°C junction temperature, validated per JEDEC JESD22-A108. Derating begins above 155°C case temperature, where I_F must be reduced linearly to zero at 175°C. Thermal design must maintain R_thJC ≤ 2.6 K/W to meet this limit under full load.

Does this diode require a gate resistor or snubber network?

No. As a unipolar Schottky diode, IDK02G65C5XTMA2 has no gate terminal and exhibits no reverse recovery, eliminating need for snubbers or gate resistors. However, layout must minimize anode-to-ground loop inductance to suppress voltage overshoot during di/dt transitions exceeding 200 A/µs.

How does its reverse leakage compare to silicon diodes at elevated temperature?

At 150°C and 650 V, IDK02G65C5XTMA2 exhibits ≤240 µA reverse leakage-still 3–5× lower than equivalent 600 V Si fast recovery diodes under identical conditions. This lower leakage reduces standby power loss and improves thermal stability in sealed, convection-cooled systems.

Can it be used in parallel with other SiC diodes for higher current handling?

Parallel operation is not recommended without individual current-sharing resistors or active balancing. While V_F has positive temperature coefficient, minor process variations in 2 A-rated SiC dies cause unequal static current division. For >2 A applications, select a higher-rated part (e.g., IDK04G65C5XTMA2) instead of paralleling.