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Infineon Technologies IDK03G65C5XTMA1
- Part No.:
- IDK03G65C5XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDK03G65C5XTMA1.pdf
- Description:
- DIODE SIL CARB 650V 3A TO263-2
- Quantity:
- Payment:
- Shipping:
Inventory:2,704
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Product details
Overview
IDK03G65C5XTMA1 from Infineon is a 650 V, 3 A silicon carbide Schottky diode in PG-TO263-2 package, designed for high-frequency, high-temperature power conversion. It delivers zero reverse recovery charge, 5 nC capacitive charge at 400 V, 1.5–2.2 V forward voltage (3 A, 25–150°C), and 650 V DC blocking capability. Used in solar inverters and PFC stages where thermal stability and EMI reduction are critical.
For engineers reviewing the IDK03G65C5XTMA1 datasheet, IDK03G65C5XTMA1 pinout, IDK03G65C5XTMA1 application, or IDK03G65C5XTMA1 equivalent, key selection criteria include its SiC-specific thermal ruggedness (Tj up to 175°C), avalanche-tested reliability (10 ms), and absence of minority-carrier recovery-critical for hard-switched 650 V topologies with CoolMOS™ co-design.
Technical Context
This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal resistance (RthJC typ. 2.2 K/W). Its unipolar conduction eliminates reverse recovery losses and enables stable switching behavior across -55°C to 175°C junction temperature range.
The device is rated for 650 V repetitive peak reverse voltage (VRRM), 31 A non-repetitive surge current (tp = 10 ms, TC = 25°C), and 100 V/ns dv/dt ruggedness under VR = 0–480 V. It complies with JEDEC qualification standards and is Pb-free/RoHS-compliant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - supports full 650 V bus designs without derating in PFC and inverter DC-link applications |
| IF (TC < 155°C) | 3 A continuous - enables compact heatsinking in SMD-mounted SMPS and UPS systems |
| VF @ 3 A, 25°C | 1.5–1.8 V - reduces conduction loss vs. Si counterparts while maintaining low thermal runaway risk |
| Qc @ VR = 400 V | 5 nC - minimizes turn-on switching loss in high-frequency ZVS/ZCS resonant converters |
| RthJC | 2.2 K/W typ. - allows direct thermal path to PCB copper, supporting >40 W power dissipation at TC = 25°C |
| IR @ 650 V, 150°C | 0.6–370 µA - ensures low leakage in high-temp solar inverter string monitoring circuits |
| dv/dt ruggedness | 100 V/ns - withstands fast voltage transients in hard-switched bridge legs without false triggering |
Pinout & Package
Package: PG-TO263-2 (D²PAK), surface-mount, single-diode configuration with isolated cathode pad and anode tab. Thermal performance optimized via diffusion-soldered die attach and thin-wafer construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Cathode) | High-current output node | Large copper area for low-inductance, high-current return path; primary thermal interface to PCB |
| Pin 2 (Anode) | Power input node | Tab-connected terminal enabling low-resistance forward conduction and mechanical anchoring |
| Pin 3 (n.a.) | No connection | Non-functional lead-no internal bond or circuit tie; must remain electrically floating |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr = 0) | Eliminates switching loss and associated EMI in hard-switched topologies; no snubber required |
| Temperature-independent switching | Forward voltage and capacitance remain stable from -55°C to 175°C-enables consistent timing in wide-temp industrial drives |
| 175°C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments without forced air cooling |
| Avalanche-rated (10 ms test) | Guarantees robustness against transient overvoltage events in unregulated DC-bus applications |
| Optimized for CoolMOS™ co-design | Matches dynamic characteristics of Infineon's 650 V superjunction MOSFETs for seamless half-bridge integration |
Applications
| Solar Inverter DC-Link | Server PSU PFC Stage |
|---|---|
Use Scenario: High-voltage DC-link freewheeling in string inverters operating at 1000 V bus with 60 kHz switching. IC Role / Device Role / Timing Role: Unidirectional freewheeling diode in boost PFC and H-bridge inverter legs. Use Value: Zero Qrr prevents shoot-through risk during synchronous rectification; 175°C rating sustains operation under rooftop ambient extremes. | Use Scenario: Active clamp PFC rectifier in 3 kW telecom/server PSUs with 96%+ efficiency targets. IC Role / Device Role / Timing Role: High-frequency output rectifier paired with 650 V CoolMOS™ C7 switches. Use Value: 5 nC Qc reduces turn-on loss by >40% vs. Si diodes; low RthJC enables direct PCB thermal coupling without heatsink. |
| UPS Inverter Output Stage | Industrial Motor Drive Boost Stage |
Use Scenario: Bidirectional energy transfer in double-conversion UPS with regenerative braking capability. IC Role / Device Role / Timing Role: Reverse-blocking diode in IGBT gate-drive bootstrap and DC-link regeneration paths. Use Value: 100 V/ns dv/dt ruggedness prevents false turn-on during fast IGBT commutation; low IR avoids standby power waste. | Use Scenario: Boost converter front-end in 400 V AC-fed variable frequency drives with 150°C ambient enclosure. IC Role / Device Role / Timing Role: High-efficiency freewheeling diode in interleaved boost stage operating at 30–50 kHz. Use Value: Stable VF across temperature avoids control loop drift; 31 A surge rating handles motor startup inrush. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D03065E (Wolfspeed) | Same 650 V/3 A rating; TO-220AC package; higher VF (1.7–2.3 V) and Qc (6.5 nC) | Limited to through-hole mounting; less optimal for high-density SMD PFC modules | Prefer when legacy TO-220 footprint or higher surge margin (35 A) is required |
| STPSC3065DY (STMicroelectronics) | 650 V/3 A; D²PAK-2L; VF = 1.6–2.1 V; Qc = 5.2 nC; RthJC = 2.5 K/W | Compatible SMD footprint but slightly higher thermal resistance and leakage at 150°C | Select when dual-source procurement or ST ecosystem alignment is prioritized |
Compared with C3D03065E and STPSC3065DY, IDK03G65C5XTMA1 offers the lowest RthJC (2.2 K/W) and tightest VF distribution (1.5–1.8 V at 25°C), delivering superior thermal headroom and conduction efficiency in space-constrained SMD power stages.
Availability
IDK03G65C5XTMA1 is available at Aetrix Electronics and suitable for solar inverters, server PSUs, and industrial UPS systems requiring stable component supply with long-term lifecycle assurance.
Supply support for IDK03G65C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride power devices.
IDK03G65C5XTMA1 belongs to Infineon's thinQ!™ Generation 5 SiC Schottky diode family-engineered specifically to complement 650 V CoolMOS™ MOSFETs in high-efficiency, high-power-density AC-DC and DC-DC conversion.
FAQ
Is IDK03G65C5XTMA1 suitable for paralleling multiple units to increase current handling?
No-this diode lacks inherent current-sharing capability due to positive temperature coefficient of VF only partially compensating for mismatch. Parallel operation requires individual current sensing and active balancing. Infineon does not characterize or guarantee performance in parallel configurations per the Rev. 2.1 datasheet.
What is the maximum recommended soldering temperature profile for IDK03G65C5XTMA1?
The device follows J-STD-020D moisture sensitivity level 1 and supports standard lead-free reflow profiles. Peak temperature must not exceed 260°C for ≤30 seconds; preheat ramp rate ≤3°C/s; time above 217°C limited to 60–150 seconds. Thermal shock testing confirms robustness under these conditions.
Does IDK03G65C5XTMA1 require a gate resistor or snubber network?
No-unlike Si or SiC MOSFETs, this Schottky diode has no gate terminal and exhibits no reverse recovery. Snubbers are unnecessary unless mitigating external circuit parasitics (e.g., transformer leakage inductance). Layout optimization remains the primary EMI control method.
Can IDK03G65C5XTMA1 be used in bidirectional power flow applications?
It functions only as a unidirectional rectifier. While it blocks 650 V in reverse bias, it cannot conduct in reverse direction. For true bidirectional power transfer, a complementary switch (e.g., MOSFET) must be placed anti-parallel to enable controlled conduction in both directions.
IDK03G65C5XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 1.8 V @ 3 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 500 µA @ 650 V
- Capacitance @ Vr, F:
- 100pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDK03G65C5XTMA1 FAQ
1.How can I place an order for IDK03G65C5XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDK03G65C5XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDK03G65C5XTMA1 reliable?
The price and inventory of IDK03G65C5XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDK03G65C5XTMA1 is usually 5 days.
3.What payment methods are accepted for IDK03G65C5XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDK03G65C5XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDK03G65C5XTMA1?
IDK03G65C5XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDK03G65C5XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDK03G65C5XTMA1?
For technical support, including IDK03G65C5XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDK03G65C5XTMA1 requirements.
6.How does Aetrix verify that IDK03G65C5XTMA1 is sourced from the original manufacturer or authorized distributors?
All IDK03G65C5XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDK03G65C5XTMA1 meets industry standards.
7.What is the process for return or replacement of IDK03G65C5XTMA1?
All IDK03G65C5XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDK03G65C5XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDK03G65C5XTMA1 part is unused and in its original packaging.
Return procedure for IDK03G65C5XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDK03G65C5XTMA1 Tags
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