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Infineon Technologies IDK03G65C5XTMA2

Part No.:
IDK03G65C5XTMA2
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIDK03G65C5XTMA2.pdf
Description:
DIODE SIL CARB 650V 3A TO263-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,439

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Product details

Overview

IDK03G65C5XTMA2 from Infineon is a 650 V, 3 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 5 nC capacitive charge at 400 V, 1.5–2.2 V forward voltage (3 A, 25–150°C), and 175°C max junction temperature. It serves as a high-efficiency freewheeling or output rectifier in high-frequency PFC stages of industrial SMPS.

For engineers reviewing the IDK03G65C5XTMA2 datasheet, IDK03G65C5XTMA2 pinout, IDK03G65C5XTMA2 application, or IDK03G65C5XTMA2 equivalent, key selection criteria include its SiC-specific thermal stability, avalanche-tested ruggedness, low Qc × Vf figure of merit, and compatibility with 650 V CoolMOS™ half-bridge topologies.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower thermal resistance (RthJC typ. 2.2 K/W) and improved efficiency across load conditions. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 175°C junction temperature without performance degradation.

The device exhibits temperature-independent switching behavior and dv/dt ruggedness of 100 V/ns under 0–480 V reverse bias. All units undergo 10 ms avalanche stress testing per JESD22, with breakdown voltage verified at 6.8 mA leakage current.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM650 V - Maximum repetitive reverse voltage; enables use in 400 V AC input PFC and 600 V DC bus systems
IF (TC < 155°C)3 A - Continuous forward current rating at case temperature below 155°C; defines thermal derating envelope
VF @ 3 A, 25°C1.5–1.8 V - Forward voltage drop; directly impacts conduction loss and thermal design in high-frequency rectification
Qc @ VR = 400 V5 nC - Total capacitive charge; determines turn-off switching loss and EMI generation in hard-switched converters
RthJC2.2 K/W typ. - Junction-to-case thermal resistance; enables compact heatsink sizing for 42 W power dissipation
dv/dt Ruggedness100 V/ns - Maximum sustainable voltage transient rate; ensures robustness against parasitic ringing in fast-switching bridges
Tj Max175°C - Maximum junction temperature; supports high ambient operation without derating in sealed enclosures

Pinout & Package

PG-TO263-2 (D²PAK) surface-mount package with isolated tab; cathode-connected tab provides low-inductance, high-current path and direct thermal interface to PCB copper area.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Tab)CathodeElectrically and thermally connected metal tab; requires soldered copper pour for thermal management and current return path
Pin 2AnodeControlled-impedance anode connection; routed with minimal loop area to reduce switching noise coupling
Pin 3Not assignedNo internal connection; mechanical support only; must remain unconnected and unshorted in layout

Key Features

FeatureDesign Value
Zero reverse recovery chargeEliminates switching tail current and associated losses, enabling >500 kHz operation without efficiency penalty
Temperature-stable VFForward voltage increases only ~0.4 V from 25°C to 150°C, simplifying thermal compensation in closed-loop control
Avalanche-rated constructionGuaranteed 10 ms non-repetitive avalanche energy handling per JEDEC JESD22-A109, supporting fault-tolerant designs
Thin-wafer + diffusion solderingReduces RthJC by 18% vs. Gen 4 and lowers Qc × Vf figure of merit for higher power density

Applications

Industrial SMPS Output RectificationSolar Inverter Boost Stage

Use Scenario: High-efficiency 3–5 kW telecom rectifier with 100–300 kHz LLC resonant topology.

IC Role / Device Role / Timing Role: Freewheeling diode in synchronous rectification auxiliary path; handles bidirectional current during dead-time intervals.

Use Value: 31 A surge rating and 175°C operation allow sustained overload capability without thermal shutdown during line transients.

Use Scenario: 10–25 kW string inverter with two-stage conversion (boost + H-bridge).

IC Role / Device Role / Timing Role: Boost diode in interleaved PFC stage; conducts continuous 3 A average current with 29 A peak at 150°C case temperature.

Use Value: 5 nC Qc reduces boost switch turn-off loss by 35% vs. comparable Si diodes, enabling smaller heatsinks and passive EMI filters.

UPS DC-Link ClampingPFC Front-End Rectification

Use Scenario: Online double-conversion UPS with 650 V DC-link and IGBT-based inverter stage.

IC Role / Device Role / Timing Role: Snubber/clamp diode across IGBT collector-emitter; absorbs inductive energy during turn-off.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during fast IGBT switching edges, improving system reliability.

Use Scenario: Active PFC module in server power supply meeting 80 PLUS Titanium efficiency requirements.

IC Role / Device Role / Timing Role: Output rectifier in critical-conduction-mode (CrCM) boost converter operating at variable frequency up to 300 kHz.

Use Value: No reverse recovery eliminates current spikes into MOSFET body diode, reducing RMS current stress and gate drive losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D03065E (Wolfspeed)Same 650 V/3 A rating; TO-220AC package; 1.7 V VF @ 3 A, 25°C; 5.2 nC QcThrough-hole mounting; higher RthJA (65 K/W); less suitable for ultra-thin SMD designsPrefer when legacy through-hole assembly or higher creepage clearance is required
STPSC3065DLF (STMicroelectronics)650 V/3 A; TO-220AC; 1.6 V VF @ 3 A, 25°C; 4.8 nC Qc; 175°C Tj maxHigher IR at 650 V (1.2 µA vs. 0.6 µA at 150°C); slightly lower surge rating (25 A vs. 29 A)Prefer when cost sensitivity outweighs marginal Qc advantage and thermal margin is sufficient

Compared with C3D03065E and STPSC3065DLF, IDK03G65C5XTMA2 offers superior thermal performance (2.2 K/W RthJC vs. >3.5 K/W), optimized SMD footprint for automated assembly, and tighter Qc consistency across temperature-critical for high-density, air-cooled PFC modules.

Availability

IDK03G65C5XTMA2 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, UPS systems, and PFC front-end designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IDK03G65C5XTMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDK03G65C5XTMA2 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ CFD7 transistors in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies IF = 3 A is rated for TC < 155°C. At 155°C case temperature, the device delivers full 3 A forward current while maintaining 175°C junction limit. Derating begins above this point per the IF vs. TC curve in Figure 7, with 0 A current allowed at 175°C case temperature.

Is the tab electrically isolated from the anode and cathode terminals?

No-the metal tab is internally connected to the cathode (Pin 1). It is not isolated and must be treated as a live, high-current terminal. Layout must ensure no unintended shorting to ground or adjacent signals; thermal pad must be connected only to cathode net and dedicated copper pour.

Does this diode require a gate resistor or external snubber network?

No-IDK03G65C5XTMA2 is a passive two-terminal Schottky diode with no gate. Its zero reverse recovery eliminates need for snubbers in most topologies. However, a small RC snubber (e.g., 10 Ω + 100 pF) across anode–cathode may be used to damp high-frequency ringing caused by stray inductance in high-di/dt layouts.

How does its surge current rating compare between 25°C and 150°C ambient?

At TC = 25°C, IF,SM = 31 A (10 ms sine half-wave); at TC = 150°C, it drops to 29 A. This minimal 6.5% reduction reflects excellent thermal stability-unlike silicon diodes, which typically lose >30% surge capability at elevated temperatures due to carrier lifetime degradation.

IDK03G65C5XTMA2 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 3 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
500 µA @ 650 V
Capacitance @ Vr, F:
100pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-2
Operating Temperature - Junction:
-55°C ~ 175°C

IDK03G65C5XTMA2 FAQ

1.How can I place an order for IDK03G65C5XTMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDK03G65C5XTMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDK03G65C5XTMA2 reliable?

The price and inventory of IDK03G65C5XTMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDK03G65C5XTMA2 is usually 5 days.

3.What payment methods are accepted for IDK03G65C5XTMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDK03G65C5XTMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDK03G65C5XTMA2?

IDK03G65C5XTMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDK03G65C5XTMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDK03G65C5XTMA2?

For technical support, including IDK03G65C5XTMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDK03G65C5XTMA2 requirements.

6.How does Aetrix verify that IDK03G65C5XTMA2 is sourced from the original manufacturer or authorized distributors?

All IDK03G65C5XTMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDK03G65C5XTMA2 meets industry standards.

7.What is the process for return or replacement of IDK03G65C5XTMA2?

All IDK03G65C5XTMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IDK03G65C5XTMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDK03G65C5XTMA2 part is unused and in its original packaging.

Return procedure for IDK03G65C5XTMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDK03G65C5XTMA2 Tags

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