Infineon Technologies IDK05G65C5XTMA1

Overview

IDK05G65C5XTMA1 from Infineon is a 650 V, 5 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 1.5–2.2 V forward voltage (5 A, 25–150°C), 8 nC capacitive charge at 400 V, and 1.7–2.7 K/W junction-to-case thermal resistance. It operates up to 175°C and is optimized for high-frequency PFC and solar inverter rectification stages.

For engineers reviewing the IDK05G65C5XTMA1 datasheet, IDK05G65C5XTMA1 pinout, IDK05G65C5XTMA1 application, or IDK05G65C5XTMA1 equivalent, key selection criteria include its SiC-specific zero-recovery behavior, temperature-stable switching, surge current rating of 46 A (10 ms), and compatibility with 650 V CoolMOS™ half-bridges in high-density power converters.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation without reverse recovery loss or associated EMI.

The device is rated for 650 V repetitive peak reverse voltage (VRRM), supports 251 A non-repetitive peak forward current (10 µs), and maintains stable 0.25–90 µA reverse leakage across 25–150°C at VR = 650 V - confirming true temperature-independent blocking behavior.

Key Specifications

Pinout & Package

Package: PG-TO263-2 (TO-263AB), surface-mount, single-diode configuration with exposed cathode pad for thermal and electrical connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D05065E and STPSC5H065DLF, IDK05G65C5XTMA1 delivers superior thermal resistance (1.7–2.7 K/W), tighter Qc control (8 nC ±10%), and JEDEC-qualified reliability for industrial UPS and server PFC - making it optimal where thermal density and long-term field stability are critical.

Availability

IDK05G65C5XTMA1 is available at Aetrix Electronics and suitable for switch-mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, extended temperature operation, and zero-recovery switching performance.

Supply support for IDK05G65C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDK05G65C5XTMA1 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power devices in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDK05G65C5XTMA1 supports continuous operation up to Tj = 175°C, verified per JEDEC JESD22-A108 humidity testing and JESD22-A103 high-temperature operating life. Derating begins at TC = 145°C per datasheet Figure 7, where IF drops linearly to zero at TC = 175°C.

Does this diode require a gate resistor or snubber network?

No - as a unipolar Schottky diode, IDK05G65C5XTMA1 has no gate terminal and exhibits no reverse recovery. Snubbers are unnecessary in properly laid-out layouts; however, a 10–22 Ω series resistor on the anode trace may be used to damp high-frequency ringing caused by stray inductance interacting with its 160 pF capacitance.

How does the 8 nC capacitive charge impact EMI in high-frequency PFC designs?

The 8 nC Qc directly determines turn-off dv/dt-induced displacement current into adjacent traces. At 200 kHz and 400 V bus, this yields ~1.6 A peak displacement current - manageable with symmetric layout and ground plane shielding, unlike Si diodes generating >15 A transient spikes due to Qrr.

Can IDK05G65C5XTMA1 replace a Si fast recovery diode in an existing 650 V design?

Yes - with identical pinout and voltage rating, it can drop into most TO263-2 footprints. However, VF is ~0.3 V higher than Si FRDs, so thermal design must verify junction temperature remains ≤175°C; also, reduced reverse leakage improves light-load efficiency but may affect zero-crossing detection circuits relying on Si diode leakage.