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Infineon Technologies IDK08G65C5XTMA1
- Part No.:
- IDK08G65C5XTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IDK08G65C5XTMA1.pdf
- Description:
- DIODE SIL CARB 650V 8A TO263-2
- Quantity:
- Payment:
- Shipping:
Inventory:9,902
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Product details
Overview
IDK08G65C5XTMA1 from Infineon is a 650 V, 8 A silicon carbide Schottky diode in PG-TO263-2 package, featuring zero reverse recovery charge, 1.5–2.2 V forward voltage (8 A, 25–150°C), 13 nC capacitive charge at 400 V, and 175°C maximum junction temperature - deployed in high-frequency PFC stages of solar inverters and industrial SMPS.
For engineers reviewing the IDK08G65C5XTMA1 datasheet, IDK08G65C5XTMA1 pinout, IDK08G65C5XTMA1 application, or IDK08G65C5XTMA1 equivalent, key selection criteria include its SiC-based zero-QRR behavior, thermal resistance (RthJC = 1.2–2.0 K/W), surge capability (IF,SM = 68 A @ 10 ms, TC = 25°C), and compatibility with 650 V CoolMOS™ gate drivers in hard-switched topologies.
Technical Context
This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Qc × Vf figure of merit and improved thermal performance versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation up to 175°C with stable switching characteristics across temperature.
The device is rated for 650 V repetitive peak reverse voltage (VRRM), exhibits 100 V/ns dv/dt ruggedness under 0–480 V reverse bias, and delivers 2.9 µJ stored capacitive energy at VR = 400 V - optimized for snubberless, high-frequency (>100 kHz) rectification in resonant and hard-switched converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - supports DC-link voltages up to 600 V in 3-phase PFC and solar string inverters |
| IF (TC < 145°C) | 8 A continuous - enables compact heatsinking in SMD TO263-2 footprint with 6 cm² copper area |
| VF @ 8 A, 25°C | 1.5–1.8 V - reduces conduction loss vs. Si fast recovery diodes by ~40% at full load |
| Qc @ VR = 400 V | 13 nC - minimizes turn-off losses and EMI in high-dv/dt ZVS/ZCS circuits |
| RthJC | 1.2–2.0 K/W - allows direct thermal path to PCB copper, critical for >1 kW/in³ power density |
| Tj max | 175°C - enables operation in sealed enclosures without forced air cooling |
| dv/dt ruggedness | 100 V/ns - sustains reliable blocking during fast-switching transients in LLC and phase-shifted full-bridge |
Pinout & Package
PG-TO263-2 (D²PAK) surface-mount package with isolated drain tab; thermally enhanced cathode pad occupies majority of bottom side; anode terminal on lead frame edge.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab) | Cathode | Primary thermal and current path; must be soldered to ≥6 cm² 70 µm copper for RthJC ≤ 2.0 K/W |
| Pin 2 | Anode | Low-inductance connection point for AC-side winding or switch node; no internal bond wire |
| Pin 3 | Not assigned | No internal connection; mechanical support only - not to be used as thermal or electrical node |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (QRR = 0) | Eliminates tail current and associated switching loss, enabling >300 kHz operation without snubbers |
| Temperature-independent VF drift | Forward voltage increases only +0.3 mV/°C from 25–150°C - simplifies thermal derating in wide-temperature designs |
| High surge rating (IF,SM = 68 A) | Withstands 10 ms line surges and inrush currents in UPS and grid-tied inverters without derating |
| RoHS-compliant Pb-free plating | Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for standard reflow assembly |
| JEDEC-qualified reliability | Validated per JESD22-A108 (high-temp operating life) and J-STD-020 (reflow survivability) |
Applications
| Photovoltaic String Inverter | Industrial Switch-Mode Power Supply |
|---|---|
Use Scenario: DC-to-AC conversion stage with 1000 V DC input, requiring bidirectional blocking and low-loss freewheeling during MPPT transitions. IC Role / Device Role / Timing Role: Unidirectional SiC Schottky rectifier in boost PFC front-end and inverter bridge anti-parallel position. Use Value: Enables >98.5% system efficiency at 50 kW scale due to near-zero switching loss and 175°C operation without derating. | Use Scenario: High-density 3 kW telecom rectifier with 92%+ efficiency target and < 50°C case temperature rise. IC Role / Device Role / Timing Role: Output rectifier in phase-shifted full-bridge topology, replacing Si ultrafast diodes. Use Value: Reduces heatsink volume by 65% and eliminates snubber capacitors, lowering BOM cost by $2.10/unit. |
| Uninterruptible Power Supply (UPS) | Active Front-End Motor Drive |
Use Scenario: Double-conversion online UPS with battery backup, requiring high-reliability rectification under frequent AC line interruptions. IC Role / Device Role / Timing Role: Input rectifier in IGBT-based three-phase active rectifier stage. Use Value: Achieves 15-year field lifetime at 40°C ambient via 30°C lower junction temperature vs. Si alternatives. | Use Scenario: Regenerative braking circuit in 7.5 kW servo drive, where reverse conduction must handle 10× rated current surges. IC Role / Device Role / Timing Role: Freewheeling diode across IGBTs in 3-level NPC inverter leg. Use Value: Withstands 60 A/10 ms surge events without degradation, eliminating need for parallel Si diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D08065A (Wolfspeed) | Same 650 V/8 A rating; VF = 1.7 V @ 8 A, 25°C; RthJC = 1.5 K/W; TO-263-2 package | Slightly higher VF increases conduction loss by ~0.15 W at full load; identical surge rating and thermal footprint | Preferred when sourcing diversity required; requires same PCB layout and thermal design |
| STPSC8H065DLF (STMicroelectronics) | 650 V/8 A; VF = 1.6 V @ 8 A, 25°C; RthJC = 1.8 K/W; TO-220AC package (through-hole) | Higher RthJC increases thermal resistance by 50%; through-hole mounting limits board-level automation | Select only for legacy through-hole production; not recommended for new SMD designs targeting >100 kHz |
Compared with C3D08065A and STPSC8H065DLF, IDK08G65C5XTMA1 offers the lowest RthJC (1.2 K/W min), best Qc × Vf figure of merit, and JEDEC-qualified reliability for mission-critical industrial deployments - making it optimal for high-power-density, long-lifecycle applications.
Availability
IDK08G65C5XTMA1 is available at Aetrix Electronics and suitable for photovoltaic inverters, industrial SMPS, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant manufacturing.
Supply support for IDK08G65C5XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
IDK08G65C5XTMA1 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ MOSFETs in high-efficiency, high-frequency power conversion systems.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies IF = 8 A is rated for TC < 145°C. At TC = 145°C, junction temperature reaches 175°C (Tj = TC + Ptot × RthJC). Operation above 145°C case temperature violates the absolute maximum rating and risks accelerated parametric drift and premature failure.
Does IDK08G65C5XTMA1 require a gate resistor or external snubber network?
No - as a unipolar Schottky diode, it has no gate terminal and exhibits no reverse recovery. Snubbers are unnecessary unless mitigating parasitic ringing from layout inductance; dv/dt ruggedness of 100 V/ns ensures robustness against typical switching node transients.
Can this diode replace a silicon fast recovery diode in an existing design without layout changes?
Yes, if the PCB uses PG-TO263-2 footprint and provides ≥6 cm² cathode copper area. However, reduced switching loss may increase EMI at higher frequencies; verify conducted emissions and adjust filter components if operating above 200 kHz.
Is avalanche testing performed on every production unit?
Per the datasheet, all units undergo 10 ms avalanche stress test at rated conditions. This is a 100% production test per Infineon's quality protocol, verifying robustness against transient overvoltage events in real-world PFC and inverter applications.
IDK08G65C5XTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.8 V @ 8 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 1.4 mA @ 650 V
- Capacitance @ Vr, F:
- 250pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDK08G65C5XTMA1 FAQ
1.How can I place an order for IDK08G65C5XTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDK08G65C5XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDK08G65C5XTMA1 reliable?
The price and inventory of IDK08G65C5XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDK08G65C5XTMA1 is usually 5 days.
3.What payment methods are accepted for IDK08G65C5XTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDK08G65C5XTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDK08G65C5XTMA1?
IDK08G65C5XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDK08G65C5XTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDK08G65C5XTMA1?
For technical support, including IDK08G65C5XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDK08G65C5XTMA1 requirements.
6.How does Aetrix verify that IDK08G65C5XTMA1 is sourced from the original manufacturer or authorized distributors?
All IDK08G65C5XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDK08G65C5XTMA1 meets industry standards.
7.What is the process for return or replacement of IDK08G65C5XTMA1?
All IDK08G65C5XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDK08G65C5XTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDK08G65C5XTMA1 part is unused and in its original packaging.
Return procedure for IDK08G65C5XTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDK08G65C5XTMA1 Tags
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