Infineon Technologies IDP12E120XKSA1

Overview

IDP12E120 from Infineon Technologies is a fast-switching, soft-recovery 1200 V, 12 A ultrafast rectifier diode in PG-TO220-2 package, featuring 1.65 V forward voltage at 12 A/25°C, 150 ns reverse recovery time at 800 V/12 A/25°C, and low 1200 nC reverse recovery charge - deployed in high-frequency PFC stages of industrial SMPS and solar inverters.

For engineers reviewing the IDP12E120 datasheet, IDP12E120 pinout, IDP12E120 application, or IDP12E120 equivalent, key selection criteria include its soft recovery behavior (S = 5), low thermal resistance (RthJC = 1.3 K/W), parallel-switching capability, and JEDEC-qualified operation up to 150 °C junction temperature.

Technical Context

This diode employs Infineon's proprietary soft-recovery epitaxial structure to minimize switching losses and EMI in hard-commutated topologies. Its dynamic parameters are characterized across temperature (25–150 °C) and di/dt (200–800 A/µs), with trr increasing from 150 ns to 225 ns and Qrr from 1200 nC to 2025 nC over that range.

The device operates with a maximum continuous forward current of 28 A at TC = 25 °C and derates to 17 A at TC = 90 °C, supported by a low RthJC of 1.3 K/W and rated for 96 W power dissipation at TC = 25 °C - enabling compact heatsink designs in space-constrained converters.

Key Specifications

Pinout & Package

PG-TO220-2 package with isolated tab (pin 1 = cathode, pin 2 = anode, pin 3 = case/thermal pad). The metal tab is electrically connected to the cathode and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH12R06DJF and IXYS MUR1220CT, IDP12E120 uniquely delivers 1200 V blocking with soft recovery and low Qrr - making it the only viable option for 800 V+ PFC and inverter DC-link rectification where EMI and thermal margin are constrained.

Availability

IDP12E120 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, UPS systems, and induction heating equipment requiring stable component supply and long-term lifecycle support.

Supply support for IDP12E120 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDP12E120 belongs to Infineon's "High Voltage Diodes" product line, engineered specifically for high-efficiency, high-reliability rectification in 650–1700 V power conversion systems demanding low switching loss and robust thermal performance.

FAQ

Is IDP12E120 suitable for paralleling multiple units to increase current capacity?

Yes - its positive temperature coefficient of forward voltage and matched dynamic characteristics enable stable current sharing without external ballasting resistors. Derating to 80% of total combined IF rating is recommended for thermal uniformity across devices mounted on a common heatsink.

What is the maximum allowable case temperature for continuous operation?

The maximum continuous case temperature is 90 °C, at which the device supports 17 A forward current while maintaining Tj ≤ 150 °C. Exceeding 90 °C requires active derating per the IF = f(TC) curve on page 4 of the datasheet, with no operation permitted above TC = 100 °C.

Does the metal tab require electrical isolation from the heatsink?

Yes - the tab is electrically connected to the cathode (Pin 1), so dielectric isolation (e.g., mica washer or silicone pad) must be used unless the heatsink is referenced to cathode potential. Failure to isolate risks short-circuiting the anode-to-ground path in non-isolated topologies.

How does reverse recovery softness (S = 5) impact EMI in a PFC boost converter?

A softness factor of 5 indicates gradual current decay after reverse recovery onset, reducing di/dt-induced voltage spikes and high-frequency ringing on the switch node. This directly lowers conducted EMI amplitude in the 30–100 MHz band and relaxes filtering requirements compared to hard-recovery diodes (S < 2).