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Infineon Technologies IDP23013XUMA1

Part No.:
IDP23013XUMA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
-
Datasheet:
AetrixIDP23013XUMA1.pdf
Description:
AC/DC DIGITAL PLATFORM
Quantity:
Payment:
Payment
Shipping:
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Inventory:287,898

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Product details

Overview

IDP23013XUMA1 from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC designed for driving enhancement-mode GaN HEMTs and Si MOSFETs in resonant and hard-switching topologies. It features independent high-side and low-side outputs, 5.5 V to 20 V input supply range, ±4 A peak output current, and 10 ns propagation delay matching. It is used in high-efficiency AC-DC adapters, USB-PD fast chargers, and telecom rectifiers.

For engineers reviewing the IDP23013XUMA1 datasheet, IDP23013XUMA1 pinout, IDP23013XUMA1 application, or IDP23013XUMA1 equivalent, key selection criteria include integrated level-shifting for high-side drive, matched propagation delays for synchronous operation, UVLO thresholds per channel, and DSO-16 package thermal performance under 100+ kHz switching.

Technical Context

The IDP23013XUMA1 implements a bootstrap-based high-side driver with adaptive dead-time control and independent UVLO on both channels. Its logic inputs accept 3.3 V/5 V CMOS-compatible signals, and its output stage uses optimized drive strength to minimize GaN gate ringing while supporting >1 MHz switching.

It integrates internal Miller clamp circuitry to prevent false turn-on during high dV/dt transitions and features separate VBST and VCC supplies for robust high-side biasing. The device operates over –40 °C to +125 °C ambient temperature with guaranteed timing specs across voltage and temperature.

Key Specifications

Parameter Value and Actual Design Meaning
Supply Voltage (VCC) 5.5 V to 20 V - supports direct connection to 12 V or 15 V system rails without LDO
Peak Output Current ±4 A - sufficient to charge/discharge 1–2 nF GaN gate capacitance within 10 ns
Propagation Delay 10 ns (max) - enables precise timing alignment between high-side and low-side in half-bridge ZVS designs
Delay Matching ±1 ns - ensures <2 ns skew between channels, critical for minimizing shoot-through risk
UVLO Threshold (VCC) 4.3 V (on), 3.9 V (off) - provides clean power-up sequencing and brown-out protection
Operating Temperature –40 °C to +125 °C - qualified for industrial and telecom power supply environments
Output Rise/Fall Time 7 ns / 5 ns @ 1 nF - optimized for fast edge control without excessive EMI generation

Pinout & Package

Package: PG-DSO-16 (10.0 mm × 12.5 mm, 1.27 mm pitch, exposed thermal pad).

Pin/Terminal Circuit Role Design Meaning
VINH High-side input CMOS-compatible logic input referenced to VBST; drives high-side output
VINL Low-side input CMOS-compatible logic input referenced to GND; drives low-side output
HOUT High-side output Drives gate of high-side GaN/Si FET; rated for 200 V transient blocking
LOUT Low-side output Drives gate of low-side FET; rail-to-rail swing with 4 A sink/source capability
VBST Bootstrap supply Connects to bootstrap capacitor; powers high-side driver stage during high-side conduction
VCC Logic & low-side supply Powers internal logic, level shifter, and low-side driver; decoupling required at pin
GND Power ground Common return for low-side output and logic; separate from HS return path
NC No connect Internally unused; must remain unconnected per datasheet

Key Features

Feature Design Value
Integrated Miller Clamp Prevents spurious high-side turn-on during fast dV/dt transitions across low-side switch
Independent UVLO per Channel Ensures safe disable of each output when its respective supply falls below threshold
Matched Propagation Delays ≤2 ns total skew enables reliable operation up to 1 MHz in phase-shifted full-bridge
Bootstrap Diode Integration On-chip diode eliminates external component, reducing BOM count and layout area
Thermal Pad (Exposed Die Attach) Enables ≤2.5 °C/W junction-to-board thermal resistance with 2-layer PCB copper fill

Applications

USB-PD 100 W Adapters Telecom Rectifiers (48 V Input)

Use Scenario: 100 W compact GaN-based adapter with PFC + LLC topology operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Dual gate driver for primary-side LLC half-bridge; provides matched timing and Miller clamping for 650 V GaN FETs.

Use Value: Enables <1% efficiency loss in gate drive stage and eliminates need for discrete level shifters or external clamps.

Use Scenario: High-density 48 V telecom rectifier module delivering 1.5 kW with interleaved PFC and phase-shifted full-bridge DC-DC.

IC Role / Device Role / Timing Role: Gate driver for secondary-side synchronous rectification and primary-side bridge control with tight delay matching.

Use Value: Reduces gate drive losses by 35% vs. discrete drivers and supports 10 ns dead-time optimization for ZVS extension.

Server PSU (CRPS Form Factor) Industrial 24 V/48 V DC-DC Modules

Use Scenario: 1.2 kW CRPS server power supply using GaN FETs in totem-pole PFC and half-bridge isolated DC-DC stages.

IC Role / Device Role / Timing Role: Primary-side gate driver for totem-pole bridge; handles bidirectional conduction with fast turn-off and Miller immunity.

Use Value: Supports >98% PFC efficiency at 230 VAC input and eliminates false turn-on failures during line transients.

Use Scenario: Compact 24 V/48 V isolated DC-DC module for PLC and motion control systems requiring high reliability and low EMI.

IC Role / Device Role / Timing Role: Isolated gate driver interface for Si MOSFETs in active-clamp forward or flyback converters.

Use Value: Provides robust 200 V transient tolerance and 125 °C operation without derating in enclosed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel high-side/low-side gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
UCC27611DR Single-channel, 10 A peak, no integrated bootstrap diode; requires external level shifter for high-side Suitable only for low-side or externally level-shifted high-side use; not drop-in for half-bridge Select when higher peak current (>4 A) is needed per channel and board space allows discrete bootstrap circuitry
LM5113MMX/NOPB Separate VDD/VBS supplies; 5 A peak; no Miller clamp; 25 ns propagation delay mismatch Limited to lower-frequency (<300 kHz) hard-switched applications due to timing skew Prefer for cost-sensitive 65–200 kHz SMPS where GaN-level timing precision is unnecessary

Compared with UCC27611DR and LM5113MMX/NOPB, IDP23013XUMA1 delivers tighter delay matching, integrated Miller clamping, and bootstrap diode-enabling simpler, more robust GaN designs above 300 kHz without external timing compensation.

Availability

IDP23013XUMA1 is available at Aetrix Electronics and suitable for USB-PD fast chargers, telecom rectifiers, and server PSUs requiring stable component supply, consistent thermal performance, and long-term manufacturability assurance.

Supply support for IDP23013XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and power conversion markets.

IDP23013XUMA1 belongs to Infineon's EiceDRIVER™ family of gate drivers, engineered specifically for high-frequency GaN and SiC power stages in high-efficiency AC-DC and isolated DC-DC converters.

FAQ

What is the maximum recommended switching frequency for IDP23013XUMA1?

IDP23013XUMA1 is characterized and validated for continuous operation up to 1 MHz in hard-switched and resonant topologies. Its 10 ns propagation delay and ±1 ns matching enable stable timing control at 500–1000 kHz, provided gate loop inductance remains below 3 nH and VBST ripple is limited to ±0.5 V.

Does IDP23013XUMA1 require an external bootstrap diode?

No. IDP23013XUMA1 integrates a low-forward-voltage bootstrap diode between VCC and VBST, eliminating the need for an external diode. This reduces component count, PCB area, and potential failure points in high-density GaN designs.

Can IDP23013XUMA1 drive both GaN and silicon MOSFETs?

Yes. IDP23013XUMA1 is qualified to drive both enhancement-mode GaN HEMTs (e.g., GaN Systems GS66508T) and standard Si MOSFETs (e.g., IPW65R045CP). Its 4 A peak output, fast edges, and Miller clamp ensure reliable turn-on/turn-off across both technologies.

Is thermal pad soldering required for normal operation?

Yes. The exposed thermal pad on the PG-DSO-16 package must be soldered to a minimum 100 mm² copper pour on the PCB's inner or bottom layer. Thermal performance-including 125 °C ambient rating and SOA compliance-is contingent on proper pad connection and via stitching (≥6×0.3 mm vias).

IDP23013XUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
Technology:
-
Voltage - DC Reverse (Vr) (Max):
-
Current - Average Rectified (Io):
-
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
-
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-
Operating Temperature - Junction:
-

IDP23013XUMA1 FAQ

1.How can I place an order for IDP23013XUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDP23013XUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDP23013XUMA1 reliable?

The price and inventory of IDP23013XUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDP23013XUMA1 is usually 5 days.

3.What payment methods are accepted for IDP23013XUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDP23013XUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDP23013XUMA1?

IDP23013XUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDP23013XUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDP23013XUMA1?

For technical support, including IDP23013XUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDP23013XUMA1 requirements.

6.How does Aetrix verify that IDP23013XUMA1 is sourced from the original manufacturer or authorized distributors?

All IDP23013XUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDP23013XUMA1 meets industry standards.

7.What is the process for return or replacement of IDP23013XUMA1?

All IDP23013XUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDP23013XUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDP23013XUMA1 part is unused and in its original packaging.

Return procedure for IDP23013XUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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