Infineon Technologies IDP30E120XKSA1

Overview

IDP30E120XKSA1 from Infineon Technologies is a fast-switching, soft-recovery 1200 V, 30 A ultrafast rectifier diode in PG-TO220-2 package, featuring 1.65 V forward voltage at 30 A/25 °C, 243 ns reverse recovery time, and low 2630 nC reverse recovery charge - deployed in high-frequency PFC stages of industrial SMPS and solar inverters.

For engineers reviewing the IDP30E120XKSA1 datasheet, IDP30E120XKSA1 pinout, IDP30E120XKSA1 application, or IDP30E120XKSA1 equivalent, key selection criteria include V_RRM = 1200 V, I_F = 30 A (T_C = 90 °C), softness factor S = 6 (25 °C), thermal resistance R_thJC = 0.9 K/W, and RoHS/halogen-free compliance for high-reliability power conversion designs.

Technical Context

This diode employs optimized epitaxial silicon structure and tailored lifetime control to achieve fast, soft reverse recovery with minimal voltage overshoot and EMI generation. Its low Q_rr (2630–5200 nC) and controlled dI_r/dt-dependent trr (243–380 ns) enable stable operation under high diF/dt conditions up to 850 A/µs.

The device is rated for continuous junction temperature up to +150 °C and exhibits predictable derating: I_F drops from 50 A at T_C = 25 °C to 30 A at T_C = 90 °C, while VF increases only marginally from 1.65 V to 2.15 V across the same T_j range (25–150 °C).

Key Specifications

Pinout & Package

PG-TO220-2 package with isolated metal tab (pin 1 = cathode, pin 2 = anode, pin 3 = case/thermal pad). The metal tab is electrically connected to the cathode and serves as primary heat path to external heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with STTH3012W and MUR30120CT, IDP30E120XKSA1 uniquely balances ultra-low Q_rr, soft recovery (S ≥ 6), and industry-leading thermal resistance (0.9 K/W), making it optimal for high-density, high-efficiency, and EMI-sensitive PFC and inverter designs.

Availability

IDP30E120XKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, induction heating systems, and EV onboard chargers requiring stable component supply, long-lifecycle support, and RoHS/halogen-free compliance.

Supply support for IDP30E120XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor leader specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure focused on energy-efficient systems.

IDP30E120XKSA1 belongs to Infineon's "CoolSiC™-complementary" ultrafast silicon diode family, engineered specifically for high-frequency, high-voltage PFC and inverter applications demanding soft switching and low-loss recovery.

FAQ

Is IDP30E120XKSA1 pin-compatible with standard TO-220-2 diodes?

Yes - it uses the standardized PG-TO220-2 footprint with pin 1 (cathode), pin 2 (anode), and pin 3 (isolated metal tab tied to cathode). Mounting hole spacing, outline dimensions, and lead pitch match JEDEC TO-220-2 mechanical specifications, enabling direct replacement in existing layouts without PCB revision.

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies I_F = 30 A at T_C = 90 °C, with absolute maximum T_j = +150 °C. Using R_thJC = 0.9 K/W, the maximum allowable case temperature under 30 A conduction is 120 °C - beyond which junction temperature exceeds rating. Derating curves confirm safe operation up to T_C = 100 °C at reduced current (≈25 A).

Does IDP30E120XKSA1 require a thermal pad or insulator when mounted to a heatsink?

No insulator is needed if system-level isolation is handled elsewhere - the metal tab is electrically connected to the cathode (Pin 1). However, electrical isolation must be ensured via system design (e.g., isolated heatsink or transformer-coupled gate drive). Mechanical mounting uses standard TO-220 hardware; thermal interface material is strongly recommended to minimize R_thCH.

How does reverse recovery softness (S = 6) impact EMI in high-frequency PFC designs?

A softness factor of 6 indicates gradual current decay during reverse recovery, reducing di/dt-induced voltage spikes and high-frequency ringing. In 100 kHz PFC stages, this lowers conducted EMI by 8–12 dB in the 30–100 MHz band compared to standard FRDs (S ≈ 1–2), easing compliance with EN 55022 Class B without oversized filters.