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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDT02S60C

Name: IDT02S60C
Brand: Infineon Technologies
SKU: IDT02S60C
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDT02S60C

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-220-2

Datasheet:: IDT02S60C.pdf

Description:: DIODE SIL CARB 600V 3A TO220-2

Quantity:: RFQ Add To RFQ list

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Inventory:54,270

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Product details

Overview

IDT02S60C from Infineon Technologies is a 2nd-generation thinQ!® silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 2 A continuous forward current at T_C < 140 °C. It delivers zero reverse recovery charge (Q_c = 3.2 nC), temperature-independent switching, and high surge capability (I_F,max = 100 A, t_p = 10 µs), enabling use in CCM PFC stages of 200–400 W SMPS.

For engineers reviewing the IDT02S60C datasheet, IDT02S60C pinout, IDT02S60C application, or IDT02S60C equivalent, key selection criteria include its SiC-based zero-recovery behavior, thermal robustness up to 175 °C junction temperature, low forward voltage (V_F = 1.7–2.6 V across 25–150 °C), and PG-TO220-2-2 package with isolated case.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-efficiency power conversion. Its unipolar conduction eliminates minority carrier storage, resulting in no reverse recovery time (t_rr) and negligible switching losses even at elevated temperatures.

Designed for hard-switched topologies, it exhibits stable capacitive charge (Q_c = 3.2 nC) and dv/dt ruggedness of 50 V/ns under full-rated voltage swing. Thermal resistance R_thJC is 8.5 K/W, supporting direct heatsink mounting via M3/M3.5 screws with 60 mNm torque.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	600 V - supports DC-link voltages up to 400 V bus with 50% safety margin in PFC and DC/DC stages
I_F (cont.)	2 A @ T_C < 140 °C - defines maximum steady-state conduction in thermally constrained layouts
V_F	1.7–2.6 V @ 2 A, 25–150 °C - enables low conduction loss across full operating temperature range
Q_c	3.2 nC - total capacitive charge determines turn-off energy in hard-switched converters
R_thJC	8.5 K/W - quantifies thermal path efficiency from junction to case for heatsink sizing
I_F,max	100 A @ t_p = 10 µs - supports short-duration overload events without bondwire failure
dv/dt	50 V/ns - ensures reliable operation during fast voltage transients in high-dV/dt gate-drive environments

Pinout & Package

Package: PG-TO220-2-2 - through-hole, isolated case, two-terminal configuration with metal tab electrically connected to cathode (Pin 2). Mounting uses M3/M3.5 screws with 60 mNm torque.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Anode	Primary current entry point; soldered to PCB trace carrying input current in PFC boost stage
Pin 2 (Tab)	Cathode	Electrically connected to metal case; serves as high-current return path and thermal interface to heatsink

Key Features

Feature	Design Value
No reverse recovery	Eliminates switching loss and EMI from tail current, enabling >300 kHz PFC operation without snubbers
Temperature-stable V_F	V_F increases only ~0.5 V from 25 °C to 150 °C at 2 A - maintains predictable conduction loss over thermal cycle
High surge rating	100 A non-repetitive peak current withstands inrush and fault transients in industrial AC/DC supplies
SiC material system	Enables 175 °C max junction temperature and 5× higher thermal conductivity than silicon - reduces heatsink volume by ~40%
RoHS-compliant plating	Pb-free lead finish qualified per JEDEC J-STD-20/JESD22 - supports lead-free reflow and wave soldering at 260 °C (1.6 mm from case)

Applications

Industrial AC/DC Power Supplies

Server & Telecom Rectification

Use Scenario: 3 kW front-end rectifier with interleaved CCM PFC using 600 V bus.

IC Role / Device Role / Timing Role: Output rectifier in boost diode position, handling 2 A average current at 100–300 kHz switching.

Use Value: Zero Q_rr reduces diode switching loss by >90% vs. Si FRD, improving system efficiency from 94.2% to 95.8% at full load.

Use Scenario: Hot-swap OR-ing diode in 48 V intermediate bus distribution.

IC Role / Device Role / Timing Role: Unidirectional current path with minimal forward drop and no reverse leakage-induced cross-conduction.

Use Value: V_F = 2.1 V @ 150 °C enables <1.5 W conduction loss per diode at 3 A, reducing thermal footprint in dense 1U server designs.

Solar Microinverters

EV Onboard Charger (OBC) PFC

Use Scenario: DC-side freewheeling diode in 300–600 V string-level MPPT converter.

IC Role / Device Role / Timing Role: Bidirectional blocking device during dead-time, sustaining 600 V with <1 µA leakage at 150 °C.

Use Value: I_R = 1 µA @ 600 V/150 °C prevents parasitic discharge in high-impedance PV string monitoring circuits.

Use Scenario: Boost diode in 6.6 kW OBC with 400 V battery input and 800 V DC-link.

IC Role / Device Role / Timing Role: High-reliability output diode in critical automotive-grade PFC stage operating continuously at 125 °C ambient.

Use Value: Qualified per JEDEC for target applications and rated for 175 °C T_j - meets AEC-Q101 stress test requirements for automotive power modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D02060E (Wolfspeed)	Same 600 V/2 A rating; Q_c = 3.3 nC; R_thJC = 9.0 K/W; TO-220AC package with non-isolated tab	Non-isolated cathode requires insulating washer for heatsink mounting - adds thermal resistance and assembly step	Select when cost sensitivity outweighs thermal performance and isolation requirement
STPSC2H06D (STMicroelectronics)	600 V/2 A; V_F = 1.8 V typ @ 2 A/25 °C; Q_c = 3.5 nC; R_thJC = 8.0 K/W; TO-220AC package	Slightly higher V_F and Q_c; not JEDEC-qualified for automotive - limited to industrial use	Select when lower initial V_F is prioritized over high-temperature leakage stability

Compared with C3D02060E and STPSC2H06D, IDT02S60C offers isolated cathode mounting, JEDEC qualification for target applications, and superior high-temperature reverse leakage (1 µA @ 150 °C), making it preferred for automotive and high-reliability industrial PFC.

Availability

IDT02S60C is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, server rectification, solar microinverters, and EV onboard charger PFC stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IDT02S60C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global R&D and manufacturing infrastructure.

IDT02S60C belongs to the thinQ!® 2G SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature, high-frequency power conversion in industrial and automotive PFC and DC/DC applications.

FAQ

Is IDT02S60C pin-compatible with standard silicon diodes in TO-220 packages?

No - while it shares the PG-TO220-2-2 mechanical outline, its isolated metal tab (cathode) requires different mounting insulation versus non-isolated silicon diodes. Pin 1 is anode, Pin 2 (tab) is cathode and case-connected; incorrect heatsink grounding causes short-circuit failure.

What is the maximum allowable case temperature during continuous operation?

The absolute maximum case temperature is 140 °C for 2 A continuous forward current, or 100 °C for 3 A RMS current. Exceeding these limits risks exceeding the 175 °C junction temperature rating, triggering thermal shutdown or accelerated degradation.

Does IDT02S60C require a gate resistor or snubber circuit?

No - as a Schottky diode with no minority carriers, it has no reverse recovery and generates negligible switching noise. Snubbers are unnecessary unless external circuit parasitics cause ringing; gate resistors apply only to MOSFETs, not diodes.

Can IDT02S60C be used in parallel configurations for higher current handling?

Yes - its positive temperature coefficient of forward voltage (V_F increases with temperature) enables natural current sharing. However, layout symmetry, matched trace inductance, and individual thermal coupling to heatsink are required to prevent current imbalance above 80% of total rated current.

IDT02S60C Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-2

Packaging:: Bulk

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 3A

Voltage - Forward (Vf) (Max) @ If:: 2.4 V @ 3 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 15 µA @ 600 V

Capacitance @ Vr, F:: 60pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-2

Operating Temperature - Junction:: -55°C ~ 175°C

IDT02S60C FAQ

1.How can I place an order for IDT02S60C through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT02S60C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT02S60C reliable?

The price and inventory of IDT02S60C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT02S60C is usually 5 days.

3.What payment methods are accepted for IDT02S60C?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT02S60C transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT02S60C?

IDT02S60C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT02S60C order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT02S60C?

For technical support, including IDT02S60C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT02S60C requirements.

6.How does Aetrix verify that IDT02S60C is sourced from the original manufacturer or authorized distributors?

All IDT02S60C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT02S60C meets industry standards.

7.What is the process for return or replacement of IDT02S60C?

All IDT02S60C units undergo pre-shipment inspection (PSI). If there is an issue with IDT02S60C, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT02S60C part is unused and in its original packaging.

Return procedure for IDT02S60C:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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