Infineon Technologies IDT04S60C

Overview

IDT04S60C from Infineon Technologies is a 2nd-generation thinQ!™ silicon carbide (SiC) Schottky diode rated for 600 V repetitive peak reverse voltage and 4 A continuous forward current, with zero reverse recovery charge (Q_c = 8 nC), <10 ns switching time, and operation up to 175 °C junction temperature - deployed in CCM PFC stages of industrial AC-DC power supplies.

For engineers reviewing the IDT04S60C datasheet, IDT04S60C pinout, IDT04S60C application, or IDT04S60C equivalent, key selection criteria include its SiC-based zero-recovery behavior, thermal resistance (R_thJC = 3.6 K/W), surge capability (I_F,SM = 32 A), RoHS-compliant Pb-free plating, and PG-TO220-2-2 package mounting requirements.

Technical Context

This SiC Schottky diode eliminates minority carrier injection, resulting in no reverse recovery time (t_rr) or forward recovery effects across temperature - enabling stable high-frequency switching in hard-switched topologies. Its capacitive switching behavior is defined by Q_c = 8 nC and C_VR=1V = 130 pF at 1 MHz.

Thermal performance is optimized for conduction-limited designs: R_thJC = 3.6 K/W enables 42 W power dissipation at T_C = 25 °C, while derating curves support 4 A I_F up to T_C = 140 °C. dv/dt ruggedness is specified at 50 V/ns under V_R = 0–480 V.

Key Specifications

Pinout & Package

Package: PG-TO220-2-2 - isolated metal tab, 2-pin through-hole package with M3/M3.5 screw-mount capability (60 mNm torque), designed for high-power thermal transfer and mechanical stability in industrial power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D04060E, IDT04S60C offers lower Q_c and tighter V_F distribution but slightly higher thermal resistance; versus SS14H, it delivers true 600 V SiC performance with zero t_rr, enabling high-efficiency, high-temperature, high-frequency operation impossible with silicon.

Availability

IDT04S60C is available at Aetrix Electronics and suitable for industrial CCM PFC rectifiers, three-phase motor drive freewheeling paths, renewable energy inverter DC links, and EV onboard charger boost stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IDT04S60C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDT04S60C belongs to Infineon's thinQ!™ 2nd-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency, high-temperature power conversion in PFC, motor drives, and solar inverters.

FAQ

Is IDT04S60C suitable for use with GaN or SiC MOSFETs in high-frequency PFC?

Yes. Its zero reverse recovery, <10 ns t_c, and 50 V/ns dv/dt ruggedness make it ideal for synchronous operation with GaN HEMTs and SiC MOSFETs up to 300 kHz. The absence of minority carriers prevents cross-conduction risks and EMI spikes common with silicon diodes.

What is the maximum recommended case temperature for continuous 4 A operation?

The datasheet specifies I_F = 4 A is sustainable up to T_C = 140 °C, provided thermal design maintains junction temperature ≤ 175 °C. At T_C = 140 °C, power dissipation is ~12 W, requiring a heatsink with ≤ 20 K/W total thermal resistance (including interface).

Does IDT04S60C require snubbers in typical PFC applications?

Snubbers are generally unnecessary due to its inherent dv/dt ruggedness (50 V/ns) and lack of reverse recovery. However, a small RC snubber may still be used for EMI filtering in ultra-high-noise environments - not for voltage clamping, but for conducted emission suppression.

Can IDT04S60C be mounted directly to a heatsink without isolation hardware?

No. The PG-TO220-2-2 package has an electrically active metal tab (cathode). Electrical isolation via mica or ceramic washer and thermal interface material is required unless the heatsink is fully floating or referenced to cathode potential in the circuit topology.