Infineon Technologies IDV03S60C

Overview

IDV03S60C from Infineon is a 2nd Generation thinQ!™ silicon carbide Schottky diode in TO-220 FullPAK package, rated for 600 V DC blocking voltage, 3 A continuous forward current at TC < 120°C, and 5 nC total capacitive charge. It delivers zero reverse recovery time, high-temperature operation up to 175°C junction, and near-identical thermal resistance (RthJC = 5.9 K/W) to non-isolated TO-220 SiC diodes-enabling high-efficiency CCM PFC stages in industrial power supplies.

For engineers reviewing the IDV03S60C datasheet, IDV03S60C pinout, IDV03S60C application, or IDV03S60C equivalent, this SiC Schottky diode offers verified surge capability (115 A peak), low VF drift across temperature (1.7–2.6 V @ 3 A), and JEDEC-qualified reliability for motor drives, solar inverters, and UPS systems requiring stable high-voltage switching performance.

Technical Context

This SiC Schottky diode operates without minority carrier injection, eliminating reverse recovery charge and enabling dv/dt ruggedness up to 50 V/ns. Its capacitive switching behavior is defined by Qc = 5 nC and tc < 10 ns under VR = 400 V, diF/dt = 200 A/µs, Tj = 150°C conditions.

The TO-220 FullPAK package integrates internal electrical isolation while maintaining RthJC = 5.9 K/W via diffusion soldering-matching standard TO-220 thermal performance without external insulators or washers. Reverse leakage remains tightly bounded: IR ≤ 30 µA @ 600 V, 25°C and ≤ 300 µA @ 600 V, 150°C.

Key Specifications

Pinout & Package

TO-220 FullPAK package with electrically isolated case, diffusion-soldered chip attachment, and Pb-free RoHS-compliant lead plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D0306E and STPSC306D, IDV03S60C uniquely combines full electrical isolation, JEDEC qualification, and matched thermal performance-making it the only choice for safety-critical, isolated-mount CCM PFC and UPS applications demanding long-term reliability without design compromises.

Availability

IDV03S60C is available at Aetrix Electronics and suitable for CCM PFC boost stages, solar inverter DC-link circuits, and industrial motor drive inverters requiring stable component supply, long-lifecycle availability, and JEDEC-qualified reliability.

Supply support for IDV03S60C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

The 2nd Generation thinQ!™ SiC Schottky diode product line targets high-efficiency, high-reliability power conversion systems-specifically engineered to replace silicon diodes in PFC, solar, UPS, and motor drive applications where thermal, EMI, and lifetime constraints dominate design decisions.

FAQ

Is IDV03S60C pin-compatible with standard TO-220 silicon diodes?

No. While the TO-220 FullPAK outline matches standard TO-220 mechanical dimensions, Pin 3 is an isolated case terminal-not electrically connected-and must not be tied to circuit ground or heatsink potential. Standard TO-220 diodes use Pin 3 as cathode or anode; miswiring causes functional failure.

What is the maximum recommended mounting torque for the IDV03S60C screw terminals?

The datasheet specifies a maximum mounting torque of 50 N·cm for M2.5 screws. Exceeding this value risks cracking the molded package or deforming the leadframe, compromising thermal resistance and long-term mechanical integrity. Use calibrated torque drivers and avoid thread-locking compounds unless qualified per Infineon's assembly guidelines.

Does IDV03S60C require gate driving or control signals?

No. As a passive Schottky diode, IDV03S60C has no gate terminal and requires no control signals. It conducts forward current when anode voltage exceeds cathode voltage by ≥1.7 V and blocks reverse voltage up to 600 V. Its operation is fully autonomous and governed solely by applied voltage and current.

Can IDV03S60C be used in parallel configurations for higher current handling?

Parallel operation is not recommended. Unlike silicon diodes, SiC Schottky diodes exhibit positive temperature coefficient for VF, but manufacturing tolerances in VF (1.7–2.6 V) and Qc cause uneven current sharing at high di/dt. Infineon does not characterize or guarantee balanced sharing; discrete current balancing resistors or separate thermal zones are required for multi-device implementations.