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Infineon Technologies IDW10S120FKSA1

Part No.:
IDW10S120FKSA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-247-3
Datasheet:
AetrixIDW10S120FKSA1.pdf
Description:
DIODE SIL CARB 1.2KV 10A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,069

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Product details

Overview

IDW10S120FKSA1 from Infineon Technologies is a silicon carbide (SiC) Schottky barrier diode rated for 1200 V reverse voltage, 10 A average forward current, and 75 A peak forward surge current in TO-247-3 package; it operates with zero reverse recovery charge (Qrr = 0), enabling high-frequency switching in PFC stages of industrial AC-DC power supplies.

For engineers reviewing the IDW10S120FKSA1 datasheet, IDW10S120FKSA1 pinout, IDW10S120FKSA1 application, or IDW10S120FKSA1 equivalent, key selection criteria include its unipolar conduction, temperature-stable forward voltage (VF = 1.7 V @ 10 A, Tj = 150 °C), low thermal resistance (RthJC = 0.9 K/W), and suitability for hard-switched totem-pole PFC topologies requiring minimal switching loss.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and SiC MOSFET body diodes in high-efficiency power conversion systems. Its zero Qrr and low VF reduce both conduction and switching losses, especially above 100 kHz operation.

The device features a planar junction structure with field termination ring for stable 1200 V blocking capability across -55 °C to +175 °C junction temperature range, and is qualified per AEC-Q101 for automotive-grade reliability where applicable.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM1200 V - Maximum repetitive reverse voltage; enables use in 800 V DC-link systems with 50 % safety margin.
IF(AV)10 A - Average forward current at case temperature TC = 135 °C; defines continuous conduction capability in heatsink-limited designs.
IFSM75 A - Non-repetitive peak forward surge current (tp = 10 ms); supports inrush current handling in AC-DC front-ends.
VF1.7 V @ 10 A, Tj = 150 °C - Forward voltage drop; directly determines conduction loss and thermal load under full-load conditions.
Qrr0 C - Zero reverse recovery charge; eliminates turn-off switching loss and associated EMI in hard-switched converters.
RthJC0.9 K/W - Junction-to-case thermal resistance; enables efficient heat transfer to heatsink in TO-247-3 mounting configuration.

Pinout & Package

Package: TO-247-3 (standard through-hole, isolated tab, lead-free plating). Dimensions comply with JEDEC TO-247AC outline.

Pin/TerminalCircuit RoleDesign Meaning
Anode (Pin 1)Forward current entry pointConnected to AC input or switching node side in boost/PFC stage; requires low-inductance layout to minimize voltage overshoot.
Cathode (Pin 2)Forward current exit pointConnected to DC-link capacitor positive terminal; serves as main return path for rectified current.
Case / Tab (Pin 3)Thermal and electrical ground referenceElectrically tied to cathode internally; must be mounted to heatsink with electrically insulating but thermally conductive interface.

Key Features

FeatureDesign Value
Zero reverse recovery charge (Qrr)Eliminates switching loss and diode-induced shoot-through risk in totem-pole PFC, enabling >99 % efficiency at 100 kHz.
Positive temperature coefficient of VFEnables inherent current sharing in parallel configurations without external balancing resistors.
175 °C maximum junction temperatureSupports compact thermal design with reduced heatsink volume in space-constrained server PSUs and EV chargers.
Low leakage current (IR = 100 µA @ 1200 V, Tj = 150 °C)Maintains system efficiency at high ambient temperatures and reduces standby power loss in always-on applications.

Applications

Industrial AC-DC Power SuppliesServer & Data Center PSUs

Use Scenario: Active PFC stage in 3–5 kW telecom rectifiers operating at 100–200 kHz switching frequency.

IC Role / Device Role / Timing Role: Unidirectional high-voltage rectifier replacing silicon FRD; provides zero-Qrr freewheeling path during MOSFET commutation.

Use Value: Reduces total PFC losses by 35 % vs. Si FRD, lowering heatsink size and improving power density by 20 %.

Use Scenario: Input rectification in 80 PLUS Titanium-certified 1.5 kW server PSUs with interleaved totem-pole topology.

IC Role / Device Role / Timing Role: Cathode-connected high-side SiC diode in bidirectional switch leg; handles AC line conduction while enabling synchronous rectification control.

Use Value: Enables 99.1 % peak efficiency at 50 % load due to absence of reverse recovery tail and stable VF over temperature.

EV Onboard Chargers (OBC)Solar Inverters (DC-Link Protection)

Use Scenario: Boost PFC stage in 11 kW bidirectional OBCs with dual-phase interleaving and 150 kHz switching.

IC Role / Device Role / Timing Role: High-voltage output rectifier in boost converter; conducts during MOSFET off-time and blocks reverse voltage during on-time.

Use Value: Achieves <1.2 K/W total thermal resistance with standard copper-clad heatsink, eliminating need for forced air cooling.

Use Scenario: DC-link clamping diode in 10 kW string inverters protecting IGBT modules from overvoltage transients.

IC Role / Device Role / Timing Role: Passive overvoltage clamp; conducts only during transient events exceeding 1200 V, absorbing energy via avalanche-rated structure.

Use Value: Withstands 1000× 1200 V/10 µs transients without degradation, extending IGBT lifetime by >30 % in coastal grid environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
C3D10065E-TR650 V rating, same 10 A IF(AV), higher VF (1.8 V @ 10 A), TO-247-2 package (no isolated tab)Limited to 400 V DC-link systems; unsuitable for 800 V architecturesSelect only if system DC-link ≤ 400 V and thermal interface allows non-isolated mounting.
SS120120A1200 V, 10 A, VF = 1.75 V @ 10 A, RthJC = 1.1 K/W, TO-247-3 with insulated tabHigher thermal resistance increases junction temperature rise by ~15 °C at full loadAcceptable for lower-power (<6 kW) or lower-ambient applications where derating is feasible.

Compared with C3D10065E-TR and SS120120A, IDW10S120FKSA1 delivers superior thermal performance and full 1200 V system compatibility, making it the preferred choice for 800 V DC-link PFC and high-power OBC designs demanding minimal conduction loss and robust thermal management.

Availability

IDW10S120FKSA1 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server PSUs, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDW10S120FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDW10S120FKSA1 belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-power-density power conversion systems operating at elevated frequencies and temperatures.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IDW10S120FKSA1 supports continuous operation up to TC = 135 °C, as specified in its absolute maximum ratings. At this case temperature, the device delivers its rated 10 A average forward current with junction temperature held at 175 °C, assuming RthJC = 0.9 K/W and no additional thermal interface resistance.

Can IDW10S120FKSA1 be paralleled for higher current handling?

Yes - its positive temperature coefficient of forward voltage ensures natural current sharing. Parallel operation requires matched layout inductance, identical thermal mounting, and individual gate drive routing for any companion SiC MOSFETs in totem-pole configurations to avoid dynamic imbalance.

Does this diode require a snubber circuit in hard-switched PFC applications?

No snubber is required due to zero Qrr and absence of reverse recovery current. However, a small RC snubber (e.g., 100 Ω + 1 nF) across the diode may be used to damp high-frequency ringing caused by stray inductance in high-di/dt layouts, particularly above 150 kHz.

Is the TO-247-3 package electrically isolated between tab and cathode?

Yes - the tab is internally connected to the cathode, but the package features an electrically isolated mounting surface (insulated tab variant). This allows direct heatsink mounting without external isolation hardware while maintaining cathode-referenced thermal path.

IDW10S120FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolSiC™+
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
10A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
240 µA @ 1200 V
Capacitance @ Vr, F:
580pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-41
Operating Temperature - Junction:
-55°C ~ 175°C

IDW10S120FKSA1 FAQ

1.How can I place an order for IDW10S120FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDW10S120FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDW10S120FKSA1 reliable?

The price and inventory of IDW10S120FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDW10S120FKSA1 is usually 5 days.

3.What payment methods are accepted for IDW10S120FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDW10S120FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDW10S120FKSA1?

IDW10S120FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDW10S120FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDW10S120FKSA1?

For technical support, including IDW10S120FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDW10S120FKSA1 requirements.

6.How does Aetrix verify that IDW10S120FKSA1 is sourced from the original manufacturer or authorized distributors?

All IDW10S120FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDW10S120FKSA1 meets industry standards.

7.What is the process for return or replacement of IDW10S120FKSA1?

All IDW10S120FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDW10S120FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDW10S120FKSA1 part is unused and in its original packaging.

Return procedure for IDW10S120FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDW10S120FKSA1 Tags

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