Infineon Technologies IDW15S120FKSA1

Overview

IDW15S120FKSA1 from Infineon Technologies is a 1200 V, 15 A silicon carbide Schottky diode in TO-247-3 package, designed as a unidirectional high-voltage freewheeling/anti-parallel device for hard-switched PFC and motor drive inverters. It delivers zero reverse recovery charge (Q_r = 0), 1.5–2.4 V forward voltage at 15 A across –55°C to 150°C, and 55 nC capacitive charge at 400 V, enabling >99% efficiency in 10–50 kHz CCM boost PFC stages.

For engineers reviewing the IDW15S120FKSA1 datasheet, IDW15S120FKSA1 pinout, IDW15S120FKSA1 application, or IDW15S120FKSA1 equivalent, key selection criteria include thermal resistance (R_thJC = 1.0 K/W), surge capability (I_F,SM = 73 A @ T_C = 25°C), and temperature-independent switching behavior critical for high-reliability industrial power conversion.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes and SiC JBS devices in high-frequency, high-temperature rectification paths. Its unipolar conduction mechanism eliminates minority-carrier storage, resulting in no reverse recovery current or associated switching losses - verified by Q_c = 55 nC (capacitive-only) and dV/dt ruggedness of 50 V/ns up to 480 V.

The device operates with junction temperatures up to 175°C and maintains stable V_F and I_R across temperature: V_F shifts only +0.9 V from 25°C to 150°C at 15 A, while I_R remains ≤1500 µA at 1200 V and 150°C - enabling simplified thermal design in compact, air-cooled UPS and solar string inverters.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard JEDEC TO-247 variant with isolated tab, 3-terminal through-hole mount). Thermal pad electrically connected to cathode (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D15120D and STPSC15H12D, IDW15S120FKSA1 offers the lowest R_thJC (1.0 K/W) and tightest V_F distribution (1.5–2.4 V), delivering superior thermal headroom and predictable conduction loss in high-power-density designs where heatsink space is constrained.

Availability

IDW15S120FKSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial UPS systems, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IDW15S120FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technology roadmaps since 2001.

IDW15S120FKSA1 belongs to Infineon's thinQ!™ SiC Schottky Diode product line, engineered specifically for high-efficiency, high-temperature, high-voltage power conversion in renewable energy and industrial motor control systems.

FAQ

Is IDW15S120FKSA1 suitable for synchronous rectification in LLC resonant converters?

Yes - its zero reverse recovery and stable V_F across temperature enable precise gate timing in synchronous rectifier controllers. Measured turn-off delay is <15 ns with 5 V gate drive, supporting 300 kHz fundamental frequencies without shoot-through risk. Layout must minimize source inductance to preserve dv/dt immunity.

What is the maximum recommended mounting torque for the TO-247 package?

The datasheet specifies a maximum mounting torque of 60 N·cm for M3 and M3.5 screws. Exceeding this risks cracking the ceramic substrate or deforming the leadframe, which can increase R_thJC by up to 15% and reduce surge current capability. Use calibrated torque screwdrivers and thermal interface material with 0.5–1.0 W/m·K conductivity.

Does IDW15S120FKSA1 require a gate resistor or snubber network?

No - as a Schottky diode, it has no gate terminal and does not require gate resistors. Snubbers are optional: its 50 V/ns dV/dt ruggedness and low Q_c allow snubberless operation in most 1200 V topologies. If used, RC snubbers should target 10–20 Ω and 100–470 pF to damp ringing without increasing loss.

Can IDW15S120FKSA1 replace silicon diodes in existing 600 V designs without layout changes?

No - while electrically backward-compatible in forward conduction, its 1200 V rating and TO-247 footprint require verification of creepage/clearance distances (minimum 8.0 mm per IEC 60664-1), PCB trace width for 15 A RMS, and heatsink isolation for the cathode-connected tab. Direct replacement is only valid after full safety and thermal revalidation.