Infineon Technologies IDW16G65C5XKSA1

Overview

IDW16G65C5XKSA1 from Infineon is a 650 V, 16 A silicon carbide Schottky diode in TO-247-3 package, designed for high-frequency, high-efficiency power conversion. It delivers zero reverse recovery charge, 1.5–1.7 V forward voltage at 16 A/25°C, 23 nC capacitive charge at 400 V, and operates up to 175°C junction temperature-enabling compact PFC stages in solar inverters and UPS systems.

For engineers reviewing the IDW16G65C5XKSA1 datasheet, IDW16G65C5XKSA1 pinout, IDW16G65C5XKSA1 application, or IDW16G65C5XKSA1 equivalent, key selection criteria include its SiC-specific thermal robustness (R_thJC = 1.2–1.6 K/W), avalanche-tested reliability (10 ms surge), and absence of minority-carrier switching losses in hard-switched topologies.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses ultra-thin wafer technology to reduce Q_C × V_F figure of merit while maintaining 650 V V_RRM and 95 A non-repetitive surge rating at 25°C. Its unipolar conduction eliminates reverse recovery, enabling operation at >100 kHz with minimal EMI generation.

The device features temperature-independent switching behavior and exhibits only 0.2–71 µA reverse leakage at 600 V (25°C) and 3.2–1400 µA at 650 V (150°C). Its dv/dt ruggedness is rated at 100 V/ns across 0–480 V reverse bias range.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab; pin 1 = cathode, pin 2 = anode, pin 3 = no connection).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D16065E and STPSC16065DL, IDW16G65C5XKSA1 offers the lowest V_F at 150°C (1.8–2.1 V), tightest Q_C specification (23 nC ±10%), and JEDEC-qualified avalanche robustness-making it optimal for thermally constrained, high-reliability PFC and inverter designs.

Availability

IDW16G65C5XKSA1 is available at Aetrix Electronics and suitable for solar inverter DC link, server PSU PFC stage, and industrial UPS battery charger applications requiring stable component supply and long-term lifecycle support.

Supply support for IDW16G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IDW16G65C5XKSA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ MOSFETs in high-density, high-efficiency power conversion systems.

FAQ

Is IDW16G65C5XKSA1 suitable for hard-switched LLC resonant converters?

Yes. Its zero reverse recovery and 100 V/ns dv/dt ruggedness make it ideal for the freewheeling position in primary-side synchronous rectification of LLC converters. Measured Q_C of 23 nC at 400 V ensures predictable turn-off loss even at 300 kHz switching frequencies, and its 175°C T_j rating supports operation in enclosed, convection-cooled designs.

What is the maximum recommended mounting torque for the TO-247-3 package?

The datasheet specifies a mounting torque of 50–70 N·cm for M3 and M4 screws. Exceeding 70 N·cm risks mechanical damage to the leadframe or internal die attach, potentially increasing R_thJC or causing latent failure. Use calibrated torque drivers and verify flatness of heatsink mating surface to ensure uniform thermal contact.

Does IDW16G65C5XKSA1 require gate drive or external control circuitry?

No. As a passive Schottky diode, IDW16G65C5XKSA1 operates without gate drive or control signals. Its conduction is fully determined by applied voltage polarity and magnitude. Unlike SiC MOSFETs or cascodes, it has no threshold voltage, no Miller capacitance, and no switching timing dependencies-simplifying layout and eliminating driver design overhead.

How does the 10 ms avalanche test impact field reliability?

The 10 ms avalanche test verifies robustness under sustained overvoltage stress, such as lightning-induced surges or inductive kickback in motor drives. Devices passing this test demonstrate stable breakdown characteristics without parametric shift or catastrophic failure, translating to >10⁶ surge cycles in real-world UPS and solar applications per JEDEC JESD22-A101 qualification.