Infineon Technologies IDW20G65C5BXKSA2

Overview

IDW20G65C5BXKSA2 from Infineon is a 650 V, dual-leg silicon carbide Schottky diode in TO-247-3 package, rated for 10 A continuous forward current per leg at TC < 125°C, with zero reverse recovery charge and temperature-independent switching. It delivers 1.5–1.7 V forward voltage at 10 A/25°C and supports high-frequency PFC and solar inverter applications requiring high surge robustness (58 A non-repetitive surge at 25°C).

For engineers reviewing the IDW20G65C5BXKSA2 datasheet, IDW20G65C5BXKSA2 pinout, IDW20G65C5BXKSA2 application, or IDW20G65C5BXKSA2 equivalent, key selection criteria include its dual-leg 650 V SiC Schottky architecture, 15 nC total capacitive charge at VR = 400 V, 1.8 K/W typical junction-to-case thermal resistance, and JEDEC-qualified avalanche ruggedness under 10 ms stress.

Technical Context

This dual-leg SiC Schottky diode integrates two independent 650 V, 10 A diode elements in a single TO-247-3 package-Pins 1 and 3 are anodes, Pin 2 is the common cathode. Its zero QRR eliminates switching losses and EMI associated with minority-carrier recovery, enabling operation up to 175°C junction temperature with stable VF and IR across temperature.

The device uses Infineon's 5th Generation thinQ!™ SiC process with thin-wafer technology, delivering lower figure-of-merit (Qc × Vf) than prior generations. It is specifically co-designed to pair with 650 V CoolMOS™ MOSFETs in hard-switched topologies, supporting high-power-density SMPS and bidirectional converters where thermal management and dv/dt ruggedness (>100 V/ns) are critical.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab; RoHS-compliant, Pb-free plating).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D20065A and STPSC20065DL3, IDW20G65C5BXKSA2 offers the lowest Qc × Vf figure-of-merit among dual-leg 650 V SiC diodes, optimized thermal resistance for compact heatsinking, and JEDEC-validated avalanche robustness-making it preferred for thermally constrained, high-reliability PFC and inverter designs.

Availability

IDW20G65C5BXKSA2 is available at Aetrix Electronics and suitable for switch-mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IDW20G65C5BXKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDW20G65C5BXKSA2 belongs to Infineon's 5th Generation thinQ!™ SiC Schottky diode product line, engineered to maximize power density and efficiency in high-frequency, high-temperature applications such as server PSUs, EV chargers, and renewable energy inverters.

FAQ

Is IDW20G65C5BXKSA2 suitable for use in totem-pole PFC circuits?

Yes. Its zero reverse recovery charge, 100 V/ns dv/dt ruggedness, and dual-leg TO-247-3 configuration make it ideal for totem-pole PFC, where fast, lossless commutation between high- and low-side switches is essential. The common-cathode layout simplifies gate drive isolation and minimizes parasitic inductance in the switching node.

What is the maximum junction temperature and how is it validated?

The absolute maximum junction temperature is 175°C, validated per JEDEC JESD22-A108 through extended life testing and thermal transient measurements. The device maintains specified electrical parameters-including VF drift and IR stability-up to this limit, with RthJC tested per JESD51-14 using transient dual-interface method.

Does IDW20G65C5BXKSA2 require a negative gate drive or special snubbing?

No. As a Schottky diode, it has no gate and requires no drive circuitry. Its zero QRR eliminates the need for RC snubbers typically used with Si fast recovery diodes. Layout best practices-such as minimizing loop inductance and using Kelvin-source connections for cathode-suffice for optimal performance.

How does the dual-leg structure impact thermal management compared to single-die alternatives?

The dual-leg structure shares a common case and thermal path, so total power dissipation must be summed across both legs. However, the 1.8 K/W typical RthJC applies to the entire package, not per leg-enabling efficient heat extraction from a single heatsink interface while maintaining electrical isolation between anodes, unlike paralleled single-die devices.