My Inquiry
My Account
Infineon Technologies IDW30G65C5FKSA1
- Part No.:
- IDW30G65C5FKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-247-3
- Datasheet:
-
IDW30G65C5FKSA1.pdf
- Description:
- DIODE SIL CARB 650V 30A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,764
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IDW30G65C5FKSA1 from Infineon is a 650 V, 30 A silicon carbide Schottky diode in TO-247-3 package with zero reverse recovery charge, 1.5–2.1 V forward voltage (30 A, 25–150 °C), and 42 nC capacitive charge at 400 V. It operates up to 175 °C junction temperature and delivers high surge current capability (165 A, 10 ms) for PFC and solar inverter front-end rectification.
For engineers reviewing the IDW30G65C5FKSA1 datasheet, IDW30G65C5FKSA1 pinout, IDW30G65C5FKSA1 application, or IDW30G65C5FKSA1 equivalent, key selection criteria include its SiC-specific thermal stability, absence of reverse recovery loss, low Qc × Vf figure of merit, and validated avalanche ruggedness under 10 ms stress.
Technical Context
This 5th-generation thinQ!™ SiC Schottky diode uses ultra-thin wafer technology and optimized anode geometry to reduce forward voltage drift with temperature while maintaining low capacitance (860 pF at 1 V, 110 pF at 600 V). Its zero-recovery behavior eliminates switching tail current and associated EMI in hard-switched topologies.
The device is rated for 650 V repetitive peak reverse voltage (VRRM), withstands 100 V/ns dv/dt, and achieves 0.8–1.0 K/W junction-to-case thermal resistance - enabling direct integration with 650 V CoolMOS™ power stages without derating at elevated ambient temperatures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - supports full bridge and boost PFC operation up to 400 V DC bus with 30 % margin |
| IF (TC < 115°C) | 30 A continuous - enables compact heatsink design in 3–5 kW industrial SMPS |
| VF @ 30 A, 25°C | 1.5–1.7 V - reduces conduction loss by ~35 % vs. comparable Si fast recovery diodes |
| Qc @ VR=400 V | 42 nC - minimizes turn-on loss in synchronous rectifiers and high-frequency PFC stages |
| Tj max | 175 °C - allows operation in sealed enclosures or high-ambient environments without forced air |
| RthJC | 0.8–1.0 K/W - supports direct mounting to copper baseplates with <1.5 W thermal overhead at 30 A |
| IF,SM @ 10 ms | 165 A - sustains line surges and inrush currents in UPS and solar string inverters |
Pinout & Package
Package: PG-TO247-3 (standard through-hole power package with isolated tab, RoHS-compliant lead plating).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | No Connection (n.c.) | Electrically isolated terminal; no internal bond wire or die connection - used for mechanical stability only |
| Pin 2 | Cathode (C) | Main current exit path; connected to die cathode metallization and case tab - requires insulated mounting when case is grounded |
| Pin 3 | Anode (A) | Main current entry path; bonded directly to SiC die anode - forms low-inductance input node in boost PFC layouts |
Key Features
| Feature | Design Value |
|---|---|
| Zero reverse recovery charge (Qrr = 0) | Eliminates switching loss and associated snubber requirements in hard-switched converters |
| Temperature-independent switching behavior | Forward voltage and capacitance remain stable across –55 to +175 °C - simplifies thermal compensation |
| High dv/dt ruggedness (100 V/ns) | Withstands rapid voltage transients during MOSFET commutation without false turn-on or latch-up |
| Optimized Qc × Vf figure of merit | Delivers best-in-class efficiency trade-off for 650 V SiC diodes - verified at 150 °C junction temperature |
| Avalanche-rated (10 ms test) | Guaranteed energy handling under unclamped inductive switching - supports robust system-level fault tolerance |
Applications
| Power Factor Correction (PFC) | Solar Inverter DC/AC Stage |
|---|---|
Use Scenario: Boost PFC stage in 3.3–5 kW server PSUs operating at 100–300 kHz switching frequency. IC Role / Device Role / Timing Role: High-side freewheeling diode in continuous conduction mode (CCM) boost converter. Use Value: Eliminates reverse recovery loss, reducing total PFC stage losses by 1.2 W at full load and enabling passive cooling. | Use Scenario: DC-link clamping and freewheeling in three-phase NPC inverters for residential solar systems (≤10 kW). IC Role / Device Role / Timing Role: Anti-parallel diode for 650 V SiC MOSFETs in T-type inverter legs. Use Value: Enables 50 kHz operation with <0.5 % THD due to absence of recovery-induced voltage spikes and EMI. |
| Uninterruptible Power Supply (UPS) | Industrial Motor Drive Front-End |
Use Scenario: Rectifier stage in double-conversion online UPS with battery backup and 98.2 % peak efficiency target. IC Role / Device Role / Timing Role: Output rectifier in high-frequency LLC resonant converter feeding DC link capacitor bank. Use Value: Reduces rectifier conduction loss by 40 % vs. Si FRD, lowering thermal stress on shared heatsink with inverter section. | Use Scenario: Regenerative braking diode in 7.5 kW variable frequency drive with 150 °C ambient enclosure. IC Role / Device Role / Timing Role: Freewheeling path for inductive motor current during IGBT turn-off transitions. Use Value: Maintains stable Vf and low Qc at 175 °C junction temperature - prevents thermal runaway during sustained overload. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D30065D (Wolfspeed) | Higher VF (1.7–2.2 V @ 30 A), same VRRM and Qc; TO-247-2 package with electrically active case | Requires insulated mounting hardware; slightly higher conduction loss at light loads | Preferred where case grounding is mandatory and thermal interface resistance can be minimized |
| SS130HE3/52T (Vishay) | Si-based 600 V hyperfast diode; 35 ns trr, 2.2 V VF, 10x higher Qrr - not SiC | Limited to ≤100 kHz; unsuitable for >125 °C ambient or high-efficiency targets | Only viable for cost-sensitive legacy designs where efficiency >96 % is not required |
Compared with C3D30065D, IDW30G65C5FKSA1 offers lower forward voltage and isolated-pin architecture; versus SS130HE3/52T, it delivers true zero-recovery operation and 50 °C higher max junction temperature - critical for high-power density and high-reliability systems.
Availability
IDW30G65C5FKSA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC/AC conversion, and uninterruptible power supply applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IDW30G65C5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
IDW30G65C5FKSA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ CFD7 transistors in high-efficiency, high-power-density AC/DC and DC/AC conversion systems.
FAQ
Is IDW30G65C5FKSA1 suitable for paralleling multiple devices?
Yes - its positive temperature coefficient of forward voltage ensures natural current sharing. Derating to 25 A per device is recommended for >100 kHz operation with matched gate drivers and symmetrical PCB layout to minimize parasitic inductance imbalance.
What is the maximum allowable case temperature during soldering?
The maximum soldering temperature is 260 °C for 10 seconds at 1.6 mm from the case, applicable only to leads - the case itself must not be heated above 150 °C during assembly to avoid delamination or metallization damage.
Does IDW30G65C5FKSA1 require a gate resistor or snubber network?
No - as a Schottky diode, it has no gate and exhibits no reverse recovery. However, a small RC snubber (10 Ω + 100 pF) across the diode is recommended in high-di/dt PFC applications to damp ringing caused by stray inductance and junction capacitance interaction.
How is avalanche ruggedness validated for this part?
Avalanche testing was performed per JESD22-A101 and JESD22-A106 standards: each unit underwent 10 ms unclamped inductive switching stress at rated IF,SM (165 A) and 150 °C case temperature, with post-test verification of VRRM, VF, and IR within datasheet limits.
IDW30G65C5FKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 30A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 30 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 1.1 mA @ 650 V
- Capacitance @ Vr, F:
- 860pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3-1
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDW30G65C5FKSA1 FAQ
1.How can I place an order for IDW30G65C5FKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDW30G65C5FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDW30G65C5FKSA1 reliable?
The price and inventory of IDW30G65C5FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDW30G65C5FKSA1 is usually 5 days.
3.What payment methods are accepted for IDW30G65C5FKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDW30G65C5FKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDW30G65C5FKSA1?
IDW30G65C5FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDW30G65C5FKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDW30G65C5FKSA1?
For technical support, including IDW30G65C5FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDW30G65C5FKSA1 requirements.
6.How does Aetrix verify that IDW30G65C5FKSA1 is sourced from the original manufacturer or authorized distributors?
All IDW30G65C5FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDW30G65C5FKSA1 meets industry standards.
7.What is the process for return or replacement of IDW30G65C5FKSA1?
All IDW30G65C5FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDW30G65C5FKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDW30G65C5FKSA1 part is unused and in its original packaging.
Return procedure for IDW30G65C5FKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDW30G65C5FKSA1 Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
