Infineon Technologies IDW40G65C5XKSA1

Overview

IDW40G65C5XKSA1 from Infineon is a 650 V, 40 A silicon carbide Schottky diode in PG-TO247-3 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage (40 A, 25–150 °C), 55 nC capacitive charge at 400 V, and 12.8 µJ stored energy - deployed in high-frequency PFC stages of industrial SMPS and solar inverters.

For engineers reviewing the IDW40G65C5XKSA1 datasheet, IDW40G65C5XKSA1 pinout, IDW40G65C5XKSA1 application, or IDW40G65C5XKSA1 equivalent, key selection criteria include avalanche-tested 650 V blocking, thermal resistance of 0.6–0.8 K/W (junction-to-case), surge capability up to 182 A (10 ms), and RoHS-compliant Pb-free plating.

Technical Context

This SiC Schottky diode replaces silicon fast recovery diodes in hard-switched topologies by eliminating reverse recovery losses and enabling operation up to 175 °C junction temperature. Its thin-wafer 5th-generation thinQ!™ design delivers lower Qc × Vf figure of merit versus prior generations.

The device exhibits temperature-independent switching behavior and dv/dt ruggedness of 100 V/ns under 0–480 V reverse bias. It is qualified per JEDEC standards for automotive and industrial applications and tested for avalanche robustness at 10 ms pulse width.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, 3-terminal configuration, M3/M4 screw mounting).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D04065E and STPSC4065DLF, IDW40G65C5XKSA1 offers unique Pin 1 no-connect flexibility for custom grounding schemes, tighter VF consistency across temperature, and JEDEC-qualified avalanche robustness - making it optimal for mission-critical PFC and inverter designs requiring layout adaptability and transient resilience.

Availability

IDW40G65C5XKSA1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar inverters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp-up.

Supply support for IDW40G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDW40G65C5XKSA1 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement CoolMOS™ 650 V power transistors in high-efficiency, high-power-density AC-DC and DC-AC conversion systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IDW40G65C5XKSA1 supports continuous operation up to 175 °C junction temperature, verified per JEDEC qualification and validated in thermal cycling tests. Derating begins above 110 °C case temperature, where rated forward current drops from 40 A to zero at 175 °C junction, per the IF=f(TC) curve in the datasheet.

Is Pin 1 internally connected or truly isolated?

Pin 1 is explicitly designated "n.c." (no connection) in the official Infineon datasheet and package outline drawing. Electrical testing confirms no continuity between Pin 1 and any internal die structure or other terminals. It must remain unconnected in PCB layout to avoid unintended parasitic coupling or mechanical stress on the leadframe.

How does its avalanche ruggedness compare to silicon diodes?

IDW40G65C5XKSA1 is tested for non-repetitive avalanche energy absorption at 10 ms pulse width, unlike conventional silicon diodes which lack defined avalanche ratings. Its wide-bandgap SiC material inherently sustains higher specific energy density, enabling reliable operation during bus overvoltage events without degradation - a feature absent in standard Si FRDs.

Can it replace a silicon fast recovery diode in an existing design without layout changes?

Yes - the PG-TO247-3 footprint matches standard TO-247 layouts, and Pin 2 (cathode) and Pin 3 (anode) align with typical silicon diode pinouts. However, Pin 1 must remain unconnected (not grounded), and thermal interface design must account for lower RthJC (0.6–0.8 K/W) to avoid underutilizing its thermal capability or overstressing the heatsink interface.