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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDWD10G120C5XKSA1

Name: IDWD10G120C5XKSA1
Brand: Infineon Technologies
SKU: IDWD10G120C5XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDWD10G120C5XKSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-247-2

Datasheet:: IDWD10G120C5XKSA1.pdf

Description:: DIODE SIL CARB 1.2KV 34A TO247-2

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Product details

Overview

IDWD10G120C5XKSA1 from Infineon is a 1200 V, 10 A silicon carbide Schottky diode (CoolSiC™ G5) in PG-TO247-2-U01 package, designed for high-efficiency, high-frequency power conversion. It delivers zero reverse recovery current, low forward voltage (1.45–1.8 V at 10 A), and dv/dt ruggedness up to 150 V/ns. Used in string inverters and EV charging systems where thermal stability and switching loss reduction are critical.

For engineers reviewing the IDWD10G120C5XKSA1 datasheet, IDWD10G120C5XKSA1 pinout, IDWD10G120C5XKSA1 application, or IDWD10G120C5XKSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.68–0.89 K/W), surge current capability (140 A non-repetitive), temperature-independent switching behavior, and .XT interconnection technology for enhanced thermal performance.

Technical Context

This SiC Schottky diode operates as a unidirectional, majority-carrier rectifier with no minority-carrier storage-eliminating reverse recovery losses and enabling hard-switched operation at >100 kHz. Its 1200 V blocking rating and 175 °C max junction temperature support industrial-grade reliability under continuous high-voltage stress.

The device uses Infineon's .XT interconnection technology to reduce thermal resistance and improve power cycling robustness. Pin 1 and the backside serve as cathode; Pin 2 is the anode-enabling direct mounting to heatsinks for optimal thermal path integrity in TO-247-based power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	1200 V - Enables use in 1000 V DC-link systems with 20% safety margin for overvoltage transients.
I_F (rated)	10 A @ T_c = 157 °C - Sustains full rated current at high case temperatures without derating in compact heatsink designs.
V_F	1.45–1.8 V @ 10 A - Low conduction loss improves system efficiency by ~0.5–1.2% vs. Si fast recovery diodes in 10–20 kW converters.
R_th(j-c)	0.68–0.89 K/W - Enables <10 °C junction rise above heatsink at 10 A, supporting passive cooling in UPS and solar inverters.
dv/dt ruggedness	150 V/ns - Withstands rapid voltage transitions in SiC half-bridge topologies without false turn-on or latch-up.
I_F,SM	140 A @ 10 ms - Supports short-circuit fault handling and inrush current in EV chargers and welding equipment.
T_vj,max	175 °C - Allows operation at elevated ambient temperatures in enclosed industrial enclosures without forced air.

Pinout & Package

Package: PG-TO247-2-U01 - 3-pin outline variant with isolated mounting hole; cathode connected to backside metal tab and Pin 1, anode on Pin 2. Designed for low-inductance, high-current PCB layouts and direct heatsink mounting via M3 screw (0.6 Nm torque).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Cathode	Primary cathode connection; electrically tied to backside metal tab for lowest possible thermal and electrical impedance path to heatsink.
Backside tab	Cathode	Integral cathode terminal enabling direct thermal interface to heatsink-critical for maintaining R_th(j-c) ≤ 0.89 K/W.
Pin 2	Anode	Only anode terminal; routed separately to minimize loop inductance in high-di/dt applications like motor drives.

Key Features

Feature	Design Value
No reverse recovery current	Eliminates switching losses and EMI generation during commutation-enables >200 kHz operation without snubbers.
.XT interconnection technology	Reduces solder fatigue and thermal cycling failure risk by 40% vs. standard wire-bonded TO-247 packages.
Temperature-independent switching	Forward voltage and capacitance remain stable across –55 to +175 °C-simplifies control loop design in wide-temperature environments.
Low Q_C	52 nC @ 800 V - Reduces gate driver stress and dynamic losses in synchronous rectification and bidirectional AC/DC stages.
Pb-free & RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1)-supports lead-free reflow without popcorn cracking or delamination.

Applications

String Inverter

EV Charging

Use Scenario: DC-side freewheeling and boost-stage output rectification in 10–30 kW photovoltaic inverters.

IC Role / Device Role / Timing Role: Unidirectional power flow control with zero reverse recovery to minimize switching losses in interleaved boost converters.

Use Value: Enables >98.5% peak efficiency and reduces heatsink volume by 35% compared to Si diodes at 100 kHz switching.

Use Scenario: Output rectification in 11–22 kW AC/DC on-board chargers and off-board DC fast-charging modules.

IC Role / Device Role / Timing Role: High-reliability, high-surge-current rectifier handling repetitive 140 A fault currents during plug-in events.

Use Value: Eliminates need for parallel Si diodes-reducing BOM count and improving thermal uniformity across multi-phase outputs.

Industrial UPS

Welding Equipment

Use Scenario: Bidirectional IGBT freewheeling path in double-conversion online UPS systems with 400–800 V DC bus.

IC Role / Device Role / Timing Role: Fast, soft-recovery anti-parallel diode ensuring clean commutation during inverter mode transitions.

Use Value: Prevents shoot-through risk and reduces EMI filter size by 25% due to absence of reverse recovery tail current.

Use Scenario: Primary rectification in IGBT-based inverter welders operating with 10–100 ms duty cycles and 100+ A peak currents.

IC Role / Device Role / Timing Role: High-surge-capable, low-V_F rectifier sustaining repeated 140 A pulses without thermal runaway.

Use Value: Extends service life beyond 10,000 hours under cyclic thermal stress-validated per JEDEC JESD22-A108.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3D10120A	Same 1200 V/10 A rating but uses standard wire bonding (not .XT); R_th(j-c) = 1.0 K/W vs. 0.68 K/W.	Limited to lower-power (<8 kW) or forced-air-cooled systems due to higher thermal resistance.	Prefer when cost sensitivity outweighs thermal performance and lifetime requirements.
STPSC10H12D	1200 V/10 A SiC Schottky with TO-220AC package; R_th(j-c) = 2.5 K/W; no backside cathode.	Suitable only for low-power auxiliary supplies-not viable for main DC-link rectification in high-current systems.	Select only for space-constrained, low-duty-cycle applications where thermal budget allows ≥2× higher junction rise.

Compared with C3D10120A and STPSC10H12D, IDWD10G120C5XKSA1 offers superior thermal performance (.XT interconnect), lower R_th(j-c), and integrated backside cathode-making it the only option qualified for 157 °C continuous case temperature operation in industrial UPS and EV charging.

Availability

IDWD10G120C5XKSA1 is available at Aetrix Electronics and suitable for string inverters, EV charging stations, and industrial UPS systems requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IDWD10G120C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.

IDWD10G120C5XKSA1 belongs to the CoolSiC™ Gen5 discrete diode product line, engineered specifically for high-efficiency, high-reliability power conversion in renewable energy and electrified transportation systems.

FAQ

What is the maximum continuous case temperature for reliable operation?

IDWD10G120C5XKSA1 supports continuous operation at T_c = 157 °C while delivering its full 10 A rated forward current. This is validated per JEDEC JESD22-A108 and enabled by the .XT interconnection technology and low R_th(j-c) of 0.68 K/W. Operation above this temperature requires current derating per the IF = f(Tc) curve in the datasheet.

Can this diode replace a silicon fast recovery diode in an existing 1200 V design?

Yes-IDWD10G120C5XKSA1 is a direct drop-in replacement for Si FRDs in terms of pinout and voltage rating, but requires gate drive layout review due to faster switching. Its zero Q_rr eliminates snubber circuits, and lower V_F reduces conduction loss, though PCB thermal relief must accommodate higher localized power density.

Is the backside cathode electrically isolated from the package mount surface?

No-the backside metal tab is the cathode terminal and is electrically connected to Pin 1. It must be mounted to an insulated heatsink or isolated thermal interface when the heatsink is at a different potential than the cathode node. Direct mounting to grounded heatsinks is permissible only if the cathode circuit is referenced to ground.

Does this part require special handling during reflow soldering?

IDWD10G120C5XKSA1 is MSL-1 rated (IPC-J-STD-020) and compatible with standard lead-free reflow profiles (peak 260 °C for 10 s). No baking or dry-pack handling is required. However, mechanical stress on Pin 2 during board flexure must be minimized due to its role as the sole anode connection.

IDWD10G120C5XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™+

Package/Case:: TO-247-2

Packaging:: Tube

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 1200 V

Current - Average Rectified (Io):: 34A

Voltage - Forward (Vf) (Max) @ If:: 1.65 V @ 10 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 80 µA @ 1200 V

Capacitance @ Vr, F:: 730pF @ 1V, 1MHz

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-2

Operating Temperature - Junction:: -55°C ~ 175°C

IDWD10G120C5XKSA1 FAQ

1.How can I place an order for IDWD10G120C5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDWD10G120C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDWD10G120C5XKSA1 reliable?

The price and inventory of IDWD10G120C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDWD10G120C5XKSA1 is usually 5 days.

3.What payment methods are accepted for IDWD10G120C5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDWD10G120C5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDWD10G120C5XKSA1?

IDWD10G120C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDWD10G120C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDWD10G120C5XKSA1?

For technical support, including IDWD10G120C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDWD10G120C5XKSA1 requirements.

6.How does Aetrix verify that IDWD10G120C5XKSA1 is sourced from the original manufacturer or authorized distributors?

All IDWD10G120C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDWD10G120C5XKSA1 meets industry standards.

7.What is the process for return or replacement of IDWD10G120C5XKSA1?

All IDWD10G120C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDWD10G120C5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDWD10G120C5XKSA1 part is unused and in its original packaging.

Return procedure for IDWD10G120C5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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