Infineon Technologies IDWD15G120C5XKSA1
- Part No.:
- IDWD15G120C5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-247-2
- Datasheet:
-
IDWD15G120C5XKSA1.pdf
- Description:
- DIODE SIL CARB 1.2KV 49A TO247-2
- Quantity:
- Payment:

- Shipping:

Inventory:18
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Product details
Overview
IDWD15G120C5XKSA1 from Infineon is a 5th Generation CoolSiC™ 1200 V, 15 A silicon carbide Schottky diode in PG-TO247-2 package, featuring zero reverse recovery charge, 82 nC total capacitive charge at 800 V and 150 °C, 175 °C maximum junction temperature, and 150 V/ns dv/dt ruggedness. It serves as a high-efficiency freewheeling or boost diode in high-voltage DC/DC converters for solar inverters.
For engineers reviewing the IDWD15G120C5XKSA1 datasheet, IDWD15G120C5XKSA1 pinout, IDWD15G120C5XKSA1 application, or IDWD15G120C5XKSA1 equivalent, key selection criteria include its 1.65 V forward voltage at 15 A and 150 °C, tight VF distribution, surge capability (170 A non-repetitive peak), thermal resistance (0.6–0.8 K/W j-c), and RoHS-compliant Pb-free plating.
Technical Context
This SiC Schottky diode replaces silicon PN diodes in high-frequency, high-voltage power stages where switching losses dominate. Its unipolar conduction eliminates reverse recovery, enabling operation up to 100 kHz with minimal EMI and no snubber requirements.
Designed for hard-switched topologies, it delivers stable VF and IR across -55 °C to 175 °C, with dv/dt immunity validated to 150 V/ns under dynamic blocking conditions - critical for reliability in fast-rising bus transients in industrial UPS and welding equipment.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 1200 V - supports 1000 V DC-link systems with 20% margin for transient overvoltage |
| IF (TC=156°C) | 15 A - continuous rated current at max case temperature, defining thermal design limit |
| VF @ 15A, 150°C | 1.65 V - low conduction loss enables >99% efficiency in high-power PFC stages |
| QC @ 800V, 150°C | 82 nC - determines turn-off energy loss in synchronous rectification and boost converters |
| Rth(j-c) | 0.6–0.8 K/W - enables direct heatsink mounting with predictable thermal drop for compact thermal design |
| dv/dt ruggedness | 150 V/ns - withstands rapid voltage transients without false turn-on in high-dI/dt gate driver circuits |
| Tvj,max | 175 °C - extends operational lifetime under sustained overload or ambient temperature stress |
Pinout & Package
Package: PG-TO247-2 (standard 3-lead TO-247 outline with 2 active terminals; pin 1 and backside are cathode, pin 2 is anode).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 + Backside Metal | Cathode | Primary current return path; electrically tied to heatsink for low-inductance layout and thermal conduction |
| Pin 2 | Anode | High-side connection point; isolated from heatsink to prevent shorting in common-cathode configurations |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery current | Eliminates switching loss and associated EMI in hard-switched converters, enabling higher frequency operation without snubbers |
| Tight VF distribution | Reduces parallel diode current imbalance, allowing reliable paralleling without external balancing resistors |
| Temperature-independent switching | Ensures consistent timing and loss behavior across full operating range (-55 °C to 175 °C), simplifying control loop design |
| Specified dv/dt ruggedness | Guarantees robust blocking during fast voltage transients in motor drives and grid-tied inverters without desaturation risk |
| RoHS-compliant Pb-free plating | Meets global environmental compliance requirements while maintaining solder joint reliability under thermal cycling |
Applications
| Solar Central Inverter | Industrial UPS |
|---|---|
Use Scenario: Boost stage in multi-level DC/DC conversion feeding 1500 V DC-link. IC Role / Device Role / Timing Role: Freewheeling diode in interleaved boost converter operating at 50 kHz. Use Value: 1.65 V VF at 150 °C reduces conduction loss by 42% vs. Si counterpart, cutting heatsink size by 35%. | Use Scenario: Output rectification in high-efficiency double-conversion online UPS. IC Role / Device Role / Timing Role: Output diode in phase-shifted full-bridge secondary side. Use Value: Zero Qrr eliminates reverse recovery spikes, reducing output filter capacitor stress and EMI filter cost by 28%. |
| EV DC Fast Charger | Induction Welding Power Supply |
Use Scenario: AC/DC front-end PFC stage handling 1000 V DC-link with 3-phase Vienna topology. IC Role / Device Role / Timing Role: Active clamp diode and boost diode in bidirectional PFC module. Use Value: 150 V/ns dv/dt rating prevents false triggering during 10 kV/µs bus transients, ensuring system uptime. | Use Scenario: Inverter output stage delivering 20 kHz pulsed DC to welding torch. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode across IGBTs in resonant inverter leg. Use Value: 170 A surge rating supports 3× rated current pulses during arc ignition without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D15120E (Wolfspeed) | Same 1200 V/15 A rating; VF = 1.7 V @ 15 A, 150 °C; Rth(j-c) = 0.9 K/W; TO-247-2 package | Higher VF increases conduction loss by ~30 mW/A; lower thermal conductivity requires larger heatsink footprint | Select when legacy layout compatibility with Wolfspeed footprint is required; verify thermal margin at 156 °C case temp |
| STPSC15H12D (STMicroelectronics) | 1200 V/15 A; VF = 1.8 V @ 15 A, 150 °C; QC = 95 nC @ 800 V; Rth(j-c) = 0.85 K/W; TO-247AC package | Higher QC increases turn-off loss in >60 kHz designs; wider VF distribution limits parallel operation | Prefer for cost-sensitive industrial SMPS where <50 kHz operation and moderate thermal margin suffice |
Compared with C3D15120E and STPSC15H12D, IDWD15G120C5XKSA1 offers the lowest VF (1.65 V), tightest VF distribution, and highest dv/dt ruggedness (150 V/ns), making it optimal for high-reliability, high-frequency solar and EV charging systems demanding minimal thermal overhead and transient immunity.
Availability
IDWD15G120C5XKSA1 is available at Aetrix Electronics and suitable for solar central inverters, industrial UPS systems, and EV DC fast chargers requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for IDWD15G120C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
IDWD15G120C5XKSA1 belongs to the CoolSiC™ 5th Generation family, engineered specifically for high-efficiency, high-power-density industrial and renewable energy systems operating above 1000 V DC-link.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies continuous forward current IF = 15 A at TC = 156 °C, with maximum junction temperature Tvj,max = 175 °C. Thermal resistance Rth(j-c) = 0.6–0.8 K/W implies that at 15 A, case temperature must not exceed 156 °C to maintain safe junction temperature - exceeding this requires derating or enhanced cooling.
Does IDWD15G120C5XKSA1 require a gate resistor or snubber circuit?
No - as a Schottky diode, it has no gate and exhibits no reverse recovery. Snubbers are unnecessary due to zero Qrr and specified 150 V/ns dv/dt ruggedness. Layout should minimize stray inductance (<15 nH) between anode/cathode and heatsink to preserve switching integrity.
Can this diode be paralleled for higher current handling?
Yes - its tight forward voltage distribution (±5% typical) and positive temperature coefficient of VF enable stable current sharing. Parallel operation requires matched layout symmetry, identical heatsinking, and <5 mm inter-device spacing to avoid thermal runaway; no external ballasting resistors are needed.
Is the PG-TO247-2 package compatible with standard TO-247 heatsinks?
Yes - PG-TO247-2 uses the industry-standard TO-247 mechanical outline (JEDEC TO-247AC). Pin 1 and backside serve as cathode, so heatsink mounting must be electrically isolated unless system ground references cathode; M3 screw torque is specified at 0.6 Nm for reliable thermal contact.
IDWD15G120C5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™+
- Package/Case:
- TO-247-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 1200 V
- Current - Average Rectified (Io):
- 49A
- Voltage - Forward (Vf) (Max) @ If:
- 1.65 V @ 15 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 124 µA @ 1200 V
- Capacitance @ Vr, F:
- 1050pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-2
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDWD15G120C5XKSA1 FAQ
1.How can I place an order for IDWD15G120C5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDWD15G120C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDWD15G120C5XKSA1 reliable?
The price and inventory of IDWD15G120C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDWD15G120C5XKSA1 is usually 5 days.
3.What payment methods are accepted for IDWD15G120C5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDWD15G120C5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDWD15G120C5XKSA1?
IDWD15G120C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDWD15G120C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDWD15G120C5XKSA1?
For technical support, including IDWD15G120C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDWD15G120C5XKSA1 requirements.
6.How does Aetrix verify that IDWD15G120C5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDWD15G120C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDWD15G120C5XKSA1 meets industry standards.
7.What is the process for return or replacement of IDWD15G120C5XKSA1?
All IDWD15G120C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDWD15G120C5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDWD15G120C5XKSA1 part is unused and in its original packaging.
Return procedure for IDWD15G120C5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDWD15G120C5XKSA1 Tags

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