Infineon Technologies IDWD30E120D7XKSA1

Overview

IDWD30E120D7XKSA1 from Infineon Technologies is a soft and ultra-fast recovery 1200 V emitter-controlled diode rated for 30 A continuous forward current, featuring 135 ns reverse recovery time at 25 °C, 2.3–3.0 V forward voltage across temperature, and 175 °C maximum junction temperature. It serves as a freewheeling or anti-parallel diode in high-voltage IGBT-based power conversion stages for industrial inverters and heat pump PFC circuits.

For engineers reviewing the IDWD30E120D7XKSA1 datasheet, IDWD30E120D7XKSA1 pinout, IDWD30E120D7XKSA1 application, or IDWD30E120D7XKSA1 equivalent, key selection criteria include its low Qrr (0.9 µC typ.), soft recovery waveform (low Erec = 0.35 mJ), and robust humidity-resistant TO-247-2 package optimized for high-reliability 1200 V switching systems.

Technical Context

This diode employs Infineon's Emitter Controlled 7 (EC7) technology to achieve controlled carrier lifetime and tailored minority-carrier recombination-enabling simultaneous low VF and ultrafast trr without hard switching spikes. Its internal emitter inductance is tightly controlled at 13 nH (measured 5 mm from case), minimizing parasitic oscillation during turn-off.

The device is characterized under standardized dynamic test conditions (Lσ = 27 nH, Cσ = 12 pF) with IKZA40N120CH7 IGBT, confirming stable performance in real-world half-bridge configurations. Recovery behavior remains soft across operating temperatures (25–175 °C) and current slopes (up to 4000 A/µs), critical for reducing EMI in EV-charging and string inverter designs.

Key Specifications

Pinout & Package

Package: PG-TO247-2-STD-NA8.8 - insulated case, single-ended 2-pin through-hole package with M3 screw-mounting capability (0.6 Nm max torque) and wave-solderable lead finish (260 °C, 10 s).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast 1200 V diode applications.

Compared with STTH3012W and MDD30E1200, IDWD30E120D7XKSA1 delivers superior thermal resistance (0.74 K/W), JEDEC-qualified humidity robustness, and lower Qrr-making it the optimal choice for high-efficiency, high-reliability 1200 V systems operating in harsh environmental conditions.

Availability

IDWD30E120D7XKSA1 is available at Aetrix Electronics and suitable for string inverter, EV-charging, and heat pump applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.

Supply support for IDWD30E120D7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDWD30E120D7XKSA1 belongs to Infineon's Emitter Controlled Diode (EC7) product line, engineered specifically for high-efficiency, high-reliability 1200 V power conversion in demanding home appliance and industrial inverter applications.

FAQ

What is the maximum allowable mounting torque for IDWD30E120D7XKSA1?

The maximum mounting torque for the M3 screw used to secure IDWD30E120D7XKSA1 in its TO-247-2 package is 0.6 Nm. Exceeding this value risks mechanical damage to the internal die attach or solder joints, potentially degrading thermal resistance or causing premature failure under thermal cycling. This specification applies across all three permitted mounting cycles.

Does IDWD30E120D7XKSA1 require pre-baking before reflow soldering?

No. IDWD30E120D7XKSA1 carries Moisture Sensitivity Level 1 (MSL1) per IPC-J-STD-020 due to its Pb-free RoHS-compliant lead plating and humidity-robust construction. It may be placed directly into reflow without baking, even after extended ambient storage-eliminating process steps and moisture-related popcorning risk.

How does the internal emitter inductance affect switching performance?

IDWD30E120D7XKSA1 has a measured internal emitter inductance of 13 nH (at 5 mm from case), which directly limits di/dt during turn-off and helps suppress voltage overshoot. This controlled inductance contributes to its soft recovery behavior and reduces the need for external snubbers in 16–20 kHz inverter designs.

Can IDWD30E120D7XKSA1 replace standard ultrafast diodes in existing 1200 V designs?

Yes-IDWD30E120D7XKSA1 uses the industry-standard PG-TO247-2-STD-NA8.8 footprint and pinout (anode on Pin 2, cathode on Pin 1 + backside), enabling drop-in replacement. However, its lower Qrr and softer recovery may reduce gate driver stress on co-packaged IGBTs, so verify layout parasitics remain within original design margins.