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Infineon Technologies IDWD30E65E7XKSA1
- Part No.:
- IDWD30E65E7XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-247-2
- Datasheet:
-
IDWD30E65E7XKSA1.pdf
- Description:
- HOME APPLIANCES 14
- Quantity:
- Payment:
- Shipping:
Inventory:193
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Product details
Overview
IDWD30E65E7XKSA1 from Infineon Technologies is a soft-recovery 650 V, 30 A emitter-controlled silicon power diode in PG-TO247-2-STD-NA8.8 package, designed for high-reliability industrial and home appliance inverters and UPS systems. It delivers low and temperature-stable forward voltage (VF = 1.55 V at 175 °C), very soft reverse recovery (trr = 132 ns at 175 °C), and low peak reverse recovery current (Irrm = 22.7 A), enabling reduced EMI and snubber stress in hard-switched topologies.
For engineers reviewing the IDWD30E65E7XKSA1 datasheet, IDWD30E65E7XKSA1 pinout, IDWD30E65E7XKSA1 application, or IDWD30E65E7XKSA1 equivalent, key selection criteria include junction temperature capability (Tvjmax = 175 °C), cosmic ray ruggedness, humidity robustness, JEDEC-qualified industrial reliability, and soft recovery performance under high di/dt (−diF/dt = 1000 A/µs).
Technical Context
This emitter-controlled Si diode uses a tailored carrier lifetime profile to achieve soft, fast, and highly temperature-stable reverse recovery-critical for minimizing voltage overshoot and oscillation in IGBT-based bridge legs. Its low internal emitter inductance (LE = 13 nH) and optimized charge distribution reduce dynamic losses and improve switching consistency across −40 °C to 175 °C.
The device operates with a maximum junction temperature of 175 °C and features a thermal resistance Rth(j–c) of 1.14 K/W, enabling high-power density designs in constrained thermal environments. Its qualified JEDEC47/20/22 test compliance confirms suitability for long-life industrial UPS and air conditioning inverters where cosmic ray-induced failure must be mitigated.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - supports DC bus voltages up to 600 V nominal in single-phase and three-phase rectifier/inverter stages |
| IF (rated) | 30 A - continuous forward current rating at Tc = 100 °C, defining thermal design margin for heatsink sizing |
| VF @ 30 A / 175 °C | 1.55 V - enables lower conduction loss and reduced thermal stress vs. standard fast recovery diodes |
| trr @ 30 A / 175 °C | 132 ns - soft recovery minimizes voltage spikes and EMI generation during turn-off |
| Irrm @ 30 A / 175 °C | 22.7 A - low peak reverse recovery current reduces snubber component stress and gate driver coupling risk |
| Tvjmax | 175 °C - extends operational lifetime in high-ambient environments such as enclosed UPS cabinets or welding equipment |
| Rth(j–c) | 1.14 K/W - allows direct thermal interface to heatsink without thermal pad penalty, supporting compact mechanical layout |
Pinout & Package
Package: PG-TO247-2-STD-NA8.8 - industry-standard 3-pin outline variant with 2 active terminals (anode/cathode) and electrically isolated metal tab (cathode). Mounting torque: 0.6 Nm (M3 screw); soldering temperature: 260 °C for 10 s at 1.6 mm from case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 & Backside Metal Tab | Cathode | Primary current return path and thermal interface; electrically tied to cathode, requires isolation from heatsink unless system ground referenced |
| Pin 2 | Anode | Input terminal for forward conduction; connects to IGBT collector or AC input node in freewheeling configuration |
Key Features
| Feature | Design Value |
|---|---|
| Soft reverse recovery | trr = 132 ns at 175 °C with minimal current tail - suppresses voltage ringing and reduces snubber losses in hard-switched converters |
| Temperature-stable VF | VF decreases only slightly from 2.1 V (25 °C) to 1.55 V (175 °C) - improves efficiency consistency across operating temperature range |
| Cosmic ray ruggedness | Qualified per JEDEC22-A122 - ensures immunity to single-event burnout in high-altitude or mission-critical industrial deployments |
| Humidity robust design | JEDEC22-A101 qualification - prevents corrosion and leakage degradation in tropical or condensing environments (e.g., residential aircon) |
| Pb-free & RoHS compliant | Pb-free lead plating - meets global environmental compliance requirements without sacrificing solder joint reliability |
Applications
| String and Micro Inverter | Datacenter UPS |
|---|---|
Use Scenario: Freewheeling diode in half-bridge DC–AC stage of solar microinverters handling 30 A peak current under partial shading conditions. IC Role / Device Role / Timing Role: Fast-recovery freewheeling diode providing low-loss, soft commutation during IGBT turn-off. Use Value: Soft recovery (trr = 132 ns at 175 °C) limits voltage overshoot to <15% above bus, reducing need for clamping components and improving MPPT stability. | Use Scenario: Output rectification and hold-up support in modular datacenter UPS battery backup modules operating continuously at 40–60 °C ambient. IC Role / Device Role / Timing Role: High-reliability output diode managing bidirectional energy flow between battery bank and inverter stage. Use Value: Cosmic ray ruggedness and 175 °C junction rating ensure >10-year field life without latent failure in unattended server rooms. |
| Residential Aircon | Welding Equipment |
Use Scenario: PFC boost diode and inverter leg freewheeling element in variable-speed compressor drives exposed to high humidity and thermal cycling. IC Role / Device Role / Timing Role: High-humidity-rated power diode delivering stable conduction and recovery over 15,000+ on/off cycles/year. Use Value: Humidity robust design (JEDEC22-A101 qualified) prevents parameter drift and leakage increase in condensing indoor units. | Use Scenario: Main rectifier and freewheeling diode in IGBT-based inverter welders subject to repetitive 10 ms surge currents and rapid thermal transients. IC Role / Device Role / Timing Role: Surge-tolerant diode handling IFSM = 126 A (10 ms sine half-wave) while maintaining soft recovery under high di/dt. Use Value: Low reverse recovery charge (Qrr = 1.75 µC at 175 °C) reduces switching loss by ~35% vs. standard FRD in 20 kHz arc stabilization circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar soft-recovery power diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH30L06S | 600 V VRRM, VF = 1.75 V @ 30 A / 175 °C, trr = 160 ns @ 175 °C, no cosmic ray qualification | Limited to non-mission-critical industrial UPS; not rated for high-altitude or long-life sealed enclosures | Select when cost sensitivity outweighs cosmic ray immunity and junction temperature margin |
| IXYS MDD30-65-10 | 650 V VRRM, VF = 1.95 V @ 30 A / 175 °C, trr = 145 ns @ 175 °C, JEDEC47 qualified but no humidity/cosmic ray validation | Suitable for welding and aircon but lacks humidity robustness for residential outdoor units | Prefer for legacy IXYS ecosystem integration where PSpice model availability is critical |
Compared with STTH30L06S and MDD30-65-10, IDWD30E65E7XKSA1 provides superior softness (lower Irrm and Erec), extended junction temperature headroom (175 °C vs. 150–165 °C), and validated environmental ruggedness-making it optimal for high-reliability, thermally demanding, and geographically diverse deployments.
Availability
IDWD30E65E7XKSA1 is available at Aetrix Electronics and suitable for string inverters, datacenter UPS, residential air conditioning, and welding equipment requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.
Supply support for IDWD30E65E7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDWD30E65E7XKSA1 belongs to Infineon's E7-series emitter-controlled diode family, engineered specifically for soft-switching efficiency, cosmic ray immunity, and extended thermal operation in next-generation power conversion systems.
FAQ
What is the maximum allowable mounting torque for IDWD30E65E7XKSA1?
The maximum mounting torque for the PG-TO247-2-STD-NA8.8 package is 0.6 Nm using an M3 screw. Exceeding this value risks mechanical damage to the leadframe or die attach, potentially degrading thermal resistance (Rth(j–c) = 1.14 K/W) or causing bondwire fatigue under thermal cycling.
Does IDWD30E65E7XKSA1 require a thermal pad between the backside tab and heatsink?
No thermal pad is required-the backside metal tab is electrically the cathode and thermally optimized for direct mounting. Using a thermal pad introduces ~0.2–0.4 K/W additional thermal resistance, which may compromise the 175 °C junction temperature margin in high-power-density designs.
Is IDWD30E65E7XKSA1 compatible with lead-free reflow soldering processes?
Yes-IDWD30E65E7XKSA1 uses Pb-free lead plating and is rated for wave soldering at 260 °C for 10 s at 1.6 mm from the case. For reflow, peak temperature must not exceed 260 °C with ≤60 s above 217 °C, per J-STD-020 moisture sensitivity level 1.
How does the soft recovery behavior affect gate driver design in IGBT half-bridges?
The soft recovery (low dirr/dt = 368 A/µs at 175 °C) reduces capacitive coupling into adjacent IGBT gates, lowering risk of false turn-on. This allows use of lower-strength gate drivers (e.g., ±15 V, 2 A) without added Miller clamping, simplifying driver PCB layout and reducing component count.
IDWD30E65E7XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 50A
- Voltage - Forward (Vf) (Max) @ If:
- 2.1 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 82 ns
- Current - Reverse Leakage @ Vr:
- 20 µA @ 650 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-2-2
- Operating Temperature - Junction:
- -
IDWD30E65E7XKSA1 FAQ
1.How can I place an order for IDWD30E65E7XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDWD30E65E7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDWD30E65E7XKSA1 reliable?
The price and inventory of IDWD30E65E7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDWD30E65E7XKSA1 is usually 5 days.
3.What payment methods are accepted for IDWD30E65E7XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDWD30E65E7XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDWD30E65E7XKSA1?
IDWD30E65E7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDWD30E65E7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDWD30E65E7XKSA1?
For technical support, including IDWD30E65E7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDWD30E65E7XKSA1 requirements.
6.How does Aetrix verify that IDWD30E65E7XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDWD30E65E7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDWD30E65E7XKSA1 meets industry standards.
7.What is the process for return or replacement of IDWD30E65E7XKSA1?
All IDWD30E65E7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDWD30E65E7XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDWD30E65E7XKSA1 part is unused and in its original packaging.
Return procedure for IDWD30E65E7XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDWD30E65E7XKSA1 Tags
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