Infineon Technologies IDWD60E120D7XKSA1

Overview

IDWD60E120D7XKSA1 from Infineon is a 1200 V, 60 A ultrafast soft-recovery emitter-controlled diode in PG-TO247-2-STD package, optimized for high-efficiency power conversion in string inverters and EV charging systems. It delivers VF = 2.3 V at 60 A/175°C, trr = 200 ns (Tvj = 175°C), and Qrr = 3.65 µC under harsh conditions, enabling reduced switching losses and EMI in hard-switched IGBT half-bridges.

For engineers reviewing the IDWD60E120D7XKSA1 datasheet, IDWD60E120D7XKSA1 pinout, IDWD60E120D7XKSA1 application, or IDWD60E120D7XKSA1 equivalent, key selection criteria include its 175°C max junction temperature, low reverse recovery charge, soft recovery behavior, and compatibility with industrial-grade thermal cycling per JEDEC22-A108.

Technical Context

This diode employs Infineon's Emitter Controlled 7 (EC7) technology, integrating a controlled emitter shorting structure to suppress minority carrier tail current without sacrificing forward conduction efficiency. Its design targets zero-voltage switching (ZVS) assist and snubberless operation in 1200 V DC-link topologies.

The device features ultra-low stored charge asymmetry and tightly controlled dirr/dt (up to 255 A/µs), enabling predictable turn-off behavior across temperature and current ranges. Its 13 nH internal emitter inductance and 0.44–0.57 K/W Rth(j-c) support high-power density mounting on copper baseplates with minimal thermal derating.

Key Specifications

Pinout & Package

Package: PG-TO247-2-STD (standard 3-pin TO-247 outline with 2 active terminals; backside cathode). Case material: thermally conductive epoxy with humidity-robust molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast soft-recovery diode applications.

Compared with MUBW30-12E1 and STTH6012-Y, IDWD60E120D7XKSA1 provides superior thermal robustness (175°C rating), lower conduction and switching losses, and engineered softness-making it optimal for compact, high-efficiency 100+ kW systems where reliability and EMI compliance are non-negotiable.

Availability

IDWD60E120D7XKSA1 is available at Aetrix Electronics and suitable for string inverters, EV charging stations, and heat pump inverters requiring stable component supply, long-lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for IDWD60E120D7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDWD60E120D7XKSA1 belongs to Infineon's Emitter Controlled Diode (EC7) product line, engineered specifically for high-efficiency, high-reliability 1200 V power conversion in solar, EV, and HVAC applications demanding soft switching and extended thermal endurance.

FAQ

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies IF = 60 A at Tc = 100°C, and maximum junction temperature is 175°C. With Rth(j-c) = 0.44–0.57 K/W, sustained case temperatures above 100°C require derating. For reliable 60 A operation, maintain Tc ≤ 100°C using forced-air or liquid cooling with verified thermal interface resistance ≤0.1 K·cm²/W.

Does IDWD60E120D7XKSA1 require a gate resistor or external snubber network?

No gate resistor is needed-it is a diode, not a controlled device. However, due to its ultrafast recovery, a small RC snubber (e.g., 10 Ω + 1 nF) across the diode is recommended in high-di/dt applications (>1000 A/µs) to damp residual ringing caused by layout parasitics, especially when used with high-speed SiC or IGBT switches.

How does the "Emitter Controlled 7" structure improve performance versus conventional FREDs?

EC7 uses patterned emitter shorts to locally quench minority carriers near the cathode, eliminating the slow tail current without increasing VF. This yields simultaneous low Qrr (3.65 µC), soft dirr/dt (<255 A/µs), and stable trr across temperature-unlike conventional FREDs that trade softness for conduction loss or vice versa.

Is this part suitable for use in automotive on-board chargers (OBC)?

While qualified for industrial applications per JEDEC22-A108, IDWD60E120D7XKSA1 is not AEC-Q101 qualified. For automotive OBCs, Infineon recommends the AEC-Q101 qualified variant IDWD60E120D7XKSA2 (same die, automotive-grade screening and traceability). Use only the XKS A2 version in production automotive systems.