Infineon Technologies IR2101S

Overview

IR2101S from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs with 600 V offset capability, 160 ns / 150 ns typical turn-on/turn-off propagation delays, and 10–20 V gate drive supply range. It enables half-bridge switching in motor drives and power supplies up to 600 V DC bus.

For engineers reviewing the IR2101S datasheet, IR2101S pinout, IR2101S application, or IR2101S equivalent, key selection considerations include bootstrap-compatible high-side operation, matched channel timing (≤50 ns delay mismatch), undervoltage lockout thresholds (8.2–9.8 V on VCC), 3.3V/5V logic compatibility, and SOIC-8 thermal performance (R_thJA = 200 °C/W).

Technical Context

The IR2101S integrates a high-voltage level-shifting circuit for the floating high-side channel and uses latch-immune CMOS technology to withstand dV/dt transients up to 50 V/ns. Its internal UVLO monitors VCC independently and disables both outputs when supply drops below ~8.2 V.

Logic inputs HIN and LIN are fully compatible with 3.3 V, 5 V, and 15 V CMOS/LSTTL sources; HO follows HIN in phase while LO follows LIN in phase-distinguishing it from the IR2102(S) which inverts both channels. The VS pin serves as the high-side return reference, enabling operation with VS up to +600 V relative to COM.

Key Specifications

Pinout & Package

IR2101S is housed in an 8-lead SOIC package (body width 3.9 mm, lead pitch 1.27 mm) with creepage/clearance compliant for 600 V applications. Thermal resistance is 200 °C/W (junction-to-ambient, board-mounted, still air).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IR2101S, IR2104S simplifies layout via integrated bootstrap diode but sacrifices independent input control, while IRS2004SPBF delivers higher drive strength and noise resilience at the cost of larger SOIC-14 footprint and higher quiescent current.

Availability

IR2101S is available at Aetrix Electronics and suitable for motor inverters, industrial AC drives, resonant DC-DC converters, and UPS half-bridge stages requiring stable component supply across extended production lifecycles.

Supply support for IR2101S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IR21xx family was designed specifically for high-voltage half-bridge gate driving in industrial motor control and switch-mode power supplies, emphasizing robustness, timing precision, and bootstrap compatibility.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IR2101S is rated for dV/dt immunity up to 50 V/ns on the VS pin, verified per datasheet test conditions. This specification ensures reliable operation during fast-switching events in half-bridge configurations where the high-side source node experiences rapid voltage transitions. Exceeding this rate may cause false triggering or latch-up, especially under high-temperature or low-VCC conditions.

Can IR2101S drive IGBTs directly?

Yes, the IR2101S can directly drive N-channel IGBTs with gate-emitter thresholds ≤5 V and gate charge requirements within its 130 mA/270 mA peak output capability. It has been validated in 600 V IGBT modules used in motor drives and UPS systems. For high-C_GE IGBTs (>100 nC), external gate resistors and optimized PCB layout are recommended to maintain timing integrity.

Is a bootstrap diode required externally?

Yes, an external fast-recovery bootstrap diode (e.g., 1N4148W or equivalent) is required between VCC and VB to charge the bootstrap capacitor during low-side conduction. The IR2101S does not integrate this diode-unlike the IR2104S-so omission will prevent high-side operation. Diode reverse recovery time must be ≤25 ns to avoid VB pumping inefficiency.

How does the UVLO function affect both output channels?

The VCC undervoltage lockout disables both HO and LO outputs simultaneously when VCC falls below ~8.2 V (with 0.8 V hysteresis). This prevents partial turn-on of power devices that could cause shoot-through or thermal runaway. The UVLO circuit remains active even if VB is present, ensuring safe shutdown regardless of bootstrap capacitor state.