Infineon Technologies IR2101SPBF

Overview

IR2101SPBF from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC designed for driving N-channel MOSFETs and IGBTs in half-bridge configurations. It features independent high-side (HO) and low-side (LO) outputs, 600 V offset voltage rating, 160 ns/150 ns typical turn-on/turn-off propagation delays, and 3.3 V/5 V/15 V logic-compatible inputs-enabling use in motor control inverters, SMPS, and industrial AC drives.

For engineers reviewing the IR2101SPBF datasheet, IR2101SPBF pinout, IR2101SPBF application, or IR2101SPBF equivalent, key selection considerations include bootstrap-compatible high-side operation up to +600 V, matched channel delays (<50 ns), undervoltage lockout thresholds (8.2–9.8 V on VCC), and SOIC-8 lead-free packaging with verified thermal resistance of 200 °C/W.

Technical Context

The IR2101SPBF integrates a high-voltage level-shifting circuit for the floating high-side channel and a robust CMOS logic interface with latch-immune HVIC technology. Its pulse generator and UV detection blocks ensure reliable switching under transient dV/dt stress up to 50 V/ns and maintain logic state integrity across VS from –5 V to +600 V.

Both channels operate with matched propagation delay (≤50 ns), in-phase input-to-output response (HIN→HO, LIN→LO), and independent supply rails: VB/VS for high-side bias and VCC/COM for low-side and logic. The output drivers deliver ±130 mA / ±270 mA peak source/sink current into capacitive loads.

Key Specifications

Pinout & Package

IR2101SPBF is housed in an 8-lead SOIC package (body width 3.9 mm, JEDEC MS-012), rated for surface-mount assembly and RoHS-compliant reflow. Thermal resistance is 200 °C/W (junction-to-ambient, board-mounted, still air).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS2101PbF, IR2101SPBF provides superior noise immunity and integrated VCC UVLO; versus UCC27211D, it offers simpler single-ended logic interface and lower system-level component count at the expense of peak current headroom.

Availability

IR2101SPBF is available at Aetrix Electronics and suitable for motor control inverters, industrial SMPS, solar microinverters, and UPS half-bridge stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IR2101SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The IR210x family was developed specifically for high-reliability, high-voltage half-bridge gate driving in energy conversion systems-emphasizing dV/dt immunity, timing precision, and bootstrap operational robustness.

FAQ

Can IR2101SPBF drive SiC MOSFETs?

Yes-its 130 mA/270 mA peak output current, 160 ns/150 ns propagation delays, and 50 V/ns dV/dt immunity meet minimum drive requirements for discrete 650 V SiC MOSFETs with Qg ≤ 35 nC. However, gate resistor tuning and careful PCB layout are essential to avoid oscillation due to SiC's low gate threshold and high dv/dt.

What is the minimum bootstrap capacitor value for 20 kHz operation?

For 20 kHz PWM with 50% duty cycle and 15 V VB supply, a 100 nF ceramic capacitor (X7R, 25 V rating) is sufficient to maintain >10 V on VB during high-side conduction. Larger values (220–470 nF) are recommended for >100 kHz or high-duty-cycle operation to limit ripple below 1.5 V.

Does IR2101SPBF require external diodes for bootstrap charging?

Yes-a fast recovery diode (e.g., 1N4148 or BAS16) must be placed between VCC and VB to charge the bootstrap capacitor during low-side conduction. The diode must withstand reverse voltage ≥ VCC and conduct ≥10 mA average current; Schottky types are preferred for lower forward drop.

How is shoot-through prevented in IR2101SPBF-based designs?

IR2101SPBF itself does not include built-in dead-time insertion. Shoot-through prevention requires external logic (e.g., MCU PWM with complementary outputs and programmable dead time) or external gate resistors tuned to slow turn-on relative to turn-off. Layout separation of HIN/LIN traces and local decoupling also reduce coupling-induced false triggering.