Infineon Technologies IR2101STR

Overview

IR2101STR from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC designed for driving N-channel MOSFETs and IGBTs in half-bridge configurations. It features independent high-side (HO) and low-side (LO) outputs, 600 V offset voltage rating, 160 ns/150 ns typical turn-on/turn-off propagation delays, and 3.3 V–15 V logic-compatible inputs. It is used in motor control inverters and DC-DC converters requiring robust bootstrap-based high-side drive.

For engineers reviewing the IR2101STR datasheet, IR2101STR pinout, IR2101STR application, or IR2101STR equivalent, key selection criteria include high-side floating capability up to +600 V, matched propagation delay (<50 ns), undervoltage lockout thresholds (8.2 V/7.4 V), 130 mA/270 mA peak output current, and SOIC-8 lead-free packaging compatibility with industrial thermal requirements.

Technical Context

The IR2101STR integrates a high-voltage level-shifting circuit for the high-side channel and a CMOS logic interface with latch-immune HVIC technology. Its floating channel operates with VB–VS differential up to 600 V and tolerates dV/dt transients up to 50 V/ns, enabling reliable operation in noisy switching environments.

It implements independent input-to-output signal paths: HIN directly controls HO (in-phase), LIN directly controls LO (in-phase), with separate UV detection on VCC and internal pulse filtering to suppress false triggering. Propagation delays are tightly matched between channels (≤50 ns), critical for minimizing shoot-through risk in bridge topologies.

Key Specifications

Pinout & Package

IR2101STR is housed in an 8-lead SOIC package with exposed pad (RoHS-compliant, Pb-free). The package provides thermal resistance R_thJA = 200 °C/W under board-mounted, still-air conditions.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high- and low-side gate driver applications.

Compared with IRS2101STRPBF and LM5109AMX/NOPB, the IR2101STR offers balanced performance for cost-sensitive industrial inverters: it delivers proven 600 V robustness and matched timing without added complexity, while maintaining SOIC-8 footprint compatibility and broad logic-level support.

Availability

IR2101STR is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, solar microinverters, and appliance power stages requiring stable component supply and long-term manufacturability.

Supply support for IR2101STR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control solutions, with leadership in high-voltage gate drivers and silicon carbide technologies.

The IR21xx family was developed specifically for cost-effective, robust half-bridge gate driving in industrial motor controls and power conversion systems-emphasizing dV/dt immunity, timing precision, and bootstrap simplicity.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IR2101STR is rated for 50 V/ns dV/dt on the VS pin under recommended operating conditions. This specification ensures reliable level-shifting and prevents false turn-on during fast high-side switching events in inductive loads such as motor windings or transformer primaries.

Can IR2101STR drive both N-channel MOSFETs and IGBTs?

Yes-the IR2101STR is explicitly characterized for driving both N-channel power MOSFETs and IGBTs. Its 130 mA/270 mA peak output current and 10–20 V gate drive range meet typical gate charge requirements for devices up to 50 A/600 V, as confirmed in Infineon Application Note AN-978.

Is a bootstrap diode required, and what type is recommended?

Yes-a fast recovery or Schottky bootstrap diode is required between VCC and VB to charge the floating supply capacitor. Infineon recommends a 1 A, 100 V Schottky diode (e.g., RB055LAM-40) with reverse recovery time <35 ns to minimize charge loss and ensure reliable high-side operation at 20 kHz and above.

Does IR2101STR include internal protection against shoot-through?

No-the IR2101STR does not integrate interlock or shoot-through prevention logic. It relies on external dead-time generation in the controller. However, its matched propagation delays (≤50 ns) and independent HIN/LIN inputs simplify external timing design to avoid cross-conduction in half-bridge configurations.