Infineon Technologies IR2101STRPBF

Overview

IR2101STRPBF from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs with in-phase logic inputs, 600 V offset capability, 130 mA/270 mA peak output current, and 160 ns / 150 ns typical propagation delays - used in half-bridge motor drives and SMPS power stages.

For engineers reviewing the IR2101STRPBF datasheet, IR2101STRPBF pinout, IR2101STRPBF application, or IR2101STRPBF equivalent, key selection criteria include bootstrap-compatible floating channel operation up to +600 V, 10–20 V gate drive supply range, 3.3 V/5 V logic compatibility, matched propagation delay (≤50 ns), and undervoltage lockout thresholds at 7.4–9.8 V.

Technical Context

The IR2101STRPBF integrates a high-voltage level-shifting circuit for the high-side channel and a CMOS logic interface with latch-immune HVIC technology. It supports bootstrap-based high-side drive with VS referenced to COM and VB referenced to VS, enabling operation across −5 V to +600 V offset.

Both channels feature independent input logic (HIN/LIN), in-phase output behavior, and separate undervoltage detection on VCC. Propagation delays are tightly matched (≤50 ns), and dynamic performance is specified with 1000 pF load at 15 V bias and 25 °C ambient.

Key Specifications

Pinout & Package

IR2101STRPBF is housed in an 8-lead SOIC package with standard surface-mount footprint and creepage clearance suitable for 600 V isolation requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IR2101STRPBF, IR2104STRPBF trades input flexibility for integration, while IRS21844STRPBF delivers higher drive strength and tighter regulation - making the latter preferable for GaN or high-current Si MOSFETs, and the former ideal for cost-sensitive, space-constrained half-bridges.

Availability

IR2101STRPBF is available at Aetrix Electronics and suitable for motor drives, induction heating inverters, industrial SMPS, and UPS inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IR2101STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IR21xx family was designed for robust, cost-effective half-bridge gate driving in AC-DC, DC-AC, and motor control applications - emphasizing dV/dt immunity, bootstrap compatibility, and wide supply voltage tolerance.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IR2101STRPBF is rated for 50 V/ns dV/dt on the VS pin under all operating conditions. This specification ensures reliable high-side channel operation without false triggering during fast switching transitions in hard-switched or resonant topologies, and is validated per Infineon's Design Tip DT97-3 using industry-standard test waveforms.

Can IR2101STRPBF drive both N-channel MOSFETs and IGBTs?

Yes - the IR2101STRPBF is explicitly characterized for both N-channel MOSFETs and IGBTs. Its 130 mA/270 mA peak output current and 10–20 V gate drive range meet typical gate charge requirements for 30–600 V discrete power switches, and its propagation delay specs are tested with resistive and capacitive loads representative of real gate structures.

Is a bootstrap diode required externally?

Yes - the IR2101STRPBF does not integrate a bootstrap diode. An external ultrafast or Schottky diode (e.g., 1N4148W or BAS21) must be placed between VCC and VB to charge the bootstrap capacitor during LO conduction, as confirmed in Figure 1 of the official datasheet and Application Note AN-978.

What is the minimum recommended bootstrap capacitor value?

A minimum 0.1 µF ceramic capacitor is recommended between VB and VS, sized to maintain ≥10 V differential during worst-case duty cycle (e.g., 99% high-side on-time). Capacitor ESR must be <1 Ω and voltage rating ≥25 V to ensure stable HO operation across temperature and load, per IRF's Design Tip DT97-3 and layout guidelines.