Infineon Technologies IR2102PBF

Overview

IR2102PBF from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs with out-of-phase logic inputs. It supports floating operation up to +600 V offset, delivers 130 mA source / 270 mA sink peak output current, and operates with 10–20 V gate drive supply - enabling use in half-bridge motor drives and SMPS inverters.

For engineers reviewing the IR2102PBF datasheet, IR2102PBF pinout, IR2102PBF application, or IR2102PBF equivalent, key selection criteria include its 160 ns turn-on / 150 ns turn-off propagation delay, 50 ns inter-channel delay matching, 3.3V/5V/15V logic compatibility, and undervoltage lockout thresholds at 7.4–9.8 V on VCC.

Technical Context

The IR2102PBF integrates a high-voltage level-shifting circuit for the high-side channel and a CMOS logic interface tolerant to −5 V to +600 V VS transients. Its internal latch-immune HVIC architecture ensures robust dV/dt immunity (>50 V/ns) without false triggering during fast switching transitions.

Unlike the IR2101, the IR2102 implements inverted logic: HIN and LIN inputs are out-of-phase with their respective HO and LO outputs - enabling direct complementary drive of high-side and low-side switches without external inverters in synchronous rectification or three-phase bridge topologies.

Key Specifications

Pinout & Package

IR2102PBF is housed in an 8-lead PDIP package (plastic dual in-line package), with creepage and clearance designed for reinforced insulation in 600 V systems. Pin assignments are electrically defined per Infineon's lead assignment diagram and validated for board-level thermal and EMI performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IR2102PBF, IR2104PBF simplifies control logic but sacrifices channel independence, while IRS21844PbF improves dynamic performance and integration at the cost of higher quiescent current and larger footprint.

Availability

IR2102PBF is available at Aetrix Electronics and suitable for motor control half-bridges, solar inverter DC-AC stages, and industrial SMPS active clamp circuits requiring stable component supply and long-term manufacturability.

Supply support for IR2102PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IR21xx family was developed specifically for cost-sensitive, high-reliability half-bridge gate driving in industrial power conversion - emphasizing dV/dt ruggedness, timing precision, and bootstrap-compatible floating operation.

FAQ

What is the function of the VS pin on the IR2102PBF?

The VS pin serves as the high-side floating return node - it connects to the switch node between the high-side and low-side power devices. All high-side circuitry (HO, VB, and internal level shifter) references VS, enabling operation with up to 600 V offset relative to COM. It must withstand rapid voltage transients up to 50 V/ns without false triggering.

Can IR2102PBF drive both MOSFETs and IGBTs?

Yes - the IR2102PBF is explicitly rated for driving both N-channel MOSFETs and IGBTs. Its 130 mA source / 270 mA sink output current, 10–20 V gate drive range, and 160/150 ns propagation delays match typical gate charge requirements for devices with Qg ≤ 1 µC. The datasheet confirms compatibility with IGBTs in half-bridge configurations up to 600 V bus voltage.

How does the IR2102PBF differ from the IR2101PBF?

The IR2102PBF uses inverted logic: HIN and LIN inputs are out-of-phase with HO and LO outputs, respectively. In contrast, the IR2101PBF provides in-phase outputs. This makes IR2102PBF ideal for direct complementary drive without external inverters, while IR2101PBF suits applications requiring non-inverted control signals from the MCU or PWM controller.

Is a bootstrap diode required externally for IR2102PBF operation?

Yes - the IR2102PBF requires an external fast-recovery bootstrap diode (e.g., 1N4148 or UF4007) between VCC and VB to charge the bootstrap capacitor during low-side conduction. Unlike later-generation drivers (e.g., IRS21844), IR2102PBF does not integrate this diode, so proper selection of diode reverse recovery time (<50 ns) and forward current rating (>10 mA average) is essential for reliable high-side operation.