Infineon Technologies IR2102S

Overview

IR2102S from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs with out-of-phase logic inputs. It supports floating operation up to +600V offset, delivers ±130 mA / +270 mA peak output current, and operates with 10–20V gate supply voltage - used in half-bridge motor drives and SMPS inverters.

For engineers reviewing the IR2102S datasheet, IR2102S pinout, IR2102S application, or IR2102S equivalent, key selection criteria include its 600V V_OFFSET, matched 160 ns / 150 ns propagation delays, 50 ns delay matching, 3.3V/5V/15V logic compatibility, and undervoltage lockout thresholds at 8.2–9.8 V (rising) and 7.4–9.0 V (falling).

Technical Context

The IR2102S integrates a high-voltage level shifter and latch-immune CMOS logic to enable robust bootstrap-based high-side drive. Its floating channel uses HVIC technology to sustain dV/dt transients up to 50 V/ns while maintaining logic integrity across VS from –5 V to +600 V.

Both channels feature independent UVLO monitoring on VCC, with separate pulse generators and noise-filtered input paths. The out-of-phase logic configuration (HIN → HO, LIN → LO inverted) eliminates external inversion logic in synchronous rectifier or complementary half-bridge control.

Key Specifications

Pinout & Package

IR2102S is housed in an 8-lead SOIC package with creepage/clearance optimized for 600 V isolation. Pin assignments are validated per Infineon PD60043 Rev.O.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IR2104S and IRS21844SPbF, the IR2102S offers optimal balance of phase control flexibility, compact 8-SOIC footprint, and proven 600 V robustness - making it preferred for cost-sensitive, space-constrained half-bridge designs where external dead-time control is already implemented.

Availability

IR2102S is available at Aetrix Electronics and suitable for motor drives, induction heating inverters, and UPS systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IR2102S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IR21xx family was designed specifically for robust, cost-effective gate driving in half-bridge and full-bridge topologies - emphasizing dV/dt immunity, bootstrap compatibility, and logic-level flexibility across diverse power conversion applications.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IR2102S is rated for dV/dt immunity up to 50 V/ns on the VS pin, verified under standard test conditions per PD60043 Rev.O. This specification ensures reliable level-shifting operation during fast switching transitions in hard-switched topologies, provided layout minimizes parasitic inductance on the VS trace and bootstrap loop.

Can IR2102S drive both MOSFETs and IGBTs?

Yes - the IR2102S is explicitly qualified for driving both N-channel power MOSFETs and IGBTs, with output drive strength (130 mA source / 270 mA sink) and voltage ratings (600 V offset, 10–20 V gate supply) aligned to typical gate requirements of devices in 600 V-class power stages.

Is a bootstrap diode required externally?

Yes - the IR2102S does not integrate a bootstrap diode. An external fast-recovery or Schottky diode (e.g., 1N4148 or BAT54) must be placed between VCC and VB to charge the bootstrap capacitor during LO conduction, as confirmed in Figure 2 and Application Note DT97-3.

How does the out-of-phase logic configuration affect PWM interface design?

The IR2102S inverts both HIN→HO and LIN→LO, meaning a logic-high HIN produces a logic-low HO. This allows direct connection to a single PWM signal routed to both inputs - with external inversion only needed if non-inverted outputs are required - simplifying control logic in synchronous rectifier or complementary switch applications.