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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies IR2102STR

Name: IR2102STR
Brand: Infineon Technologies
SKU: IR2102STR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IR2102STR

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IR2102STR.pdf

Description:: IC GATE DRVR HALF-BRIDGE 8SOIC

Quantity:: RFQ Add To RFQ list

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Inventory:2,521

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Product details

Overview

IR2102STR from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs with out-of-phase logic inputs. It supports floating operation up to +600V offset, delivers ±130 mA / +270 mA peak output current, and operates with 10–20V gate supply voltage. It is used in half-bridge motor drives and SMPS inverters requiring robust bootstrap-based high-side switching.

For engineers reviewing the IR2102STR datasheet, IR2102STR pinout, IR2102STR application, or IR2102STR equivalent, key selection criteria include its 600V V_OFFSET, matched 160 ns / 150 ns propagation delays, 50 ns delay matching between channels, 3.3V/5V/15V logic compatibility, and undervoltage lockout thresholds at 7.4–9.8 V on V_CC.

Technical Context

The IR2102STR integrates a high-voltage level-shifting circuit for the high-side channel and a CMOS logic interface tolerant to −5 V to +600 V on VS. Its internal latch-immune HVIC architecture ensures reliable operation under fast dV/dt transients up to 50 V/ns.

Unlike the IR2101, the IR2102STR implements inverted logic: HIN and LIN inputs drive HO and LO outputs out of phase - enabling direct complementary control without external inversion. Propagation delays are tightly matched (≤50 ns) to minimize shoot-through risk in bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
VOFFSET max	600 V - enables high-side switching in 400 V AC line-connected inverters and industrial motor drives
IO+ / IO−	130 mA / 270 mA - sufficient to charge/discharge 1 nF gate capacitance in ≤100 ns for 600 V IGBTs
ton / toff (typ.)	160 ns / 150 ns - supports >3 MHz PWM switching in resonant converters
Delay matching	50 ns - reduces dead-time uncertainty in synchronous rectification and half-bridge ZVS designs
VCC UVLO threshold	7.4–9.8 V - prevents erratic output behavior during brown-out conditions in 12 V supply systems
Logic compatibility	3.3 V, 5 V, 15 V - interoperable with microcontrollers, FPGAs, and analog comparators without level shifters

Pinout & Package

IR2102STR is housed in an 8-lead SOIC package with standard surface-mount footprint and creepage clearance suitable for 600 V isolation requirements.

Pin/Terminal	Circuit Role	Design Meaning
HIN	Inverting logic input for high-side output	Drives HO out-of-phase with signal; referenced to COM; compatible with 3.3 V CMOS
LIN	Inverting logic input for low-side output	Drives LO out-of-phase with signal; enables complementary half-bridge control without external inverters
HO	High-side gate drive output	Floating output referenced to VS; capable of sourcing 130 mA into gate capacitance
LO	Low-side gate drive output	Ground-referenced output; sinks 270 mA for fast IGBT turn-off
VB	High-side floating supply	Bootstrap supply node for high-side driver; must be decoupled to VS with ≥0.1 µF ceramic
VS	High-side floating return	Switching node connection; withstands −5 V to +600 V transients with dV/dt immunity
VCC	Logic and low-side supply	Fixed 10–20 V supply powering internal logic and LO stage; includes UVLO protection
COM	Low-side ground reference	Common return for LIN, LO, and VCC; must be low-inductance path to power ground

Key Features

Feature	Design Value
Out-of-phase logic inputs	Eliminates need for external inverters in half-bridge configurations, reducing BOM count and layout area
600 V dV/dt immune floating channel	Withstands 50 V/ns transients on VS, preventing false triggering in high-noise motor drive environments
Matched propagation delays	≤50 ns skew between HO and LO edges minimizes required dead time, improving efficiency in high-frequency bridges
Integrated UVLO on VCC	Prevents partial turn-on of power devices during supply ramp-up or brown-out, avoiding thermal stress and shoot-through

Applications

Motor Drive Half-Bridge

Induction Cooktop Inverter

Use Scenario: Driving N-channel MOSFETs in a 3-phase BLDC inverter for HVAC compressors operating from 300–400 V DC bus.

IC Role / Device Role / Timing Role: High- and low-side gate driver providing synchronized, out-of-phase gate signals with matched timing to prevent cross-conduction.

Use Value: 600 V offset rating and 50 ns delay matching enable safe operation at 400 V bus with <100 ns dead time, increasing inverter efficiency by ~1.2%.

Use Scenario: Controlling resonant LLC half-bridge in induction cooktops with 20–50 kHz variable-frequency operation.

IC Role / Device Role / Timing Role: Dual-channel gate driver delivering precise, jitter-free HO/LO edges to manage zero-voltage switching transitions.

Use Value: 160 ns / 150 ns propagation delays and 100 ns rise/fall times ensure accurate timing control across temperature, maintaining ZVS over full load range.

Industrial SMPS

UPS Inverter Stage

Use Scenario: Gate driving 600 V IGBTs in 3 kW telecom rectifier PFC + DC-DC stages with active clamp topology.

IC Role / Device Role / Timing Role: Isolated high-side driver enabling bootstrap-based high-side switching without optocouplers or isolated supplies.

Use Value: VB–VS floating supply architecture eliminates need for auxiliary isolated bias rails, reducing system cost and component count by 30%.

Use Scenario: Driving SiC MOSFETs in 10 kVA online UPS inverter with 100 kHz switching and bidirectional power flow.

IC Role / Device Role / Timing Role: Robust gate driver supporting fast SiC switching while suppressing noise-induced false turn-on via dV/dt immunity.

Use Value: 50 V/ns dV/dt tolerance prevents spurious HO activation during rapid SiC drain voltage transitions, eliminating gate driver failure in field deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IR2104STR	Includes built-in dead-time generator (600 ns); single-input control; no LIN/HIN separation	Suitable for simpler half-bridge control where fixed dead time is acceptable; not for independent channel timing	Select when system-level dead-time management is impractical and consistent 600 ns guard band is sufficient
IRS2004M	Higher 2 A peak output current; integrated bootstrap diode; 5 V logic only; no 3.3 V support	Better suited for high-current GaN/SiC drivers requiring >1 A gate drive; less flexible for mixed-voltage control systems	Choose for high-power audio amplifiers or fast-switching GaN inverters needing higher peak current and integrated bootstrap diode

Compared with IR2102STR, IR2104STR simplifies control with integrated dead time but sacrifices independent channel timing flexibility, while IRS2004M offers higher drive strength and integration at the cost of logic voltage range and part-level timing control.

Availability

IR2102STR is available at Aetrix Electronics and suitable for motor drives, induction heating inverters, industrial SMPS, and UPS inverter stages requiring stable component supply and long-term manufacturability.

Supply support for IR2102STR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IR21xx family was designed for cost-sensitive, high-reliability half-bridge and full-bridge power conversion systems requiring robust bootstrap-based high-side drive without isolated supplies.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IR2102STR is rated for 50 V/ns dV/dt on the VS pin under all operating conditions. This specification is verified per test condition in the datasheet and ensures immunity to false triggering during fast switching transitions in 600 V systems. Exceeding this rate may cause unintended high-side turn-on due to capacitive coupling into the level shifter.

Can IR2102STR drive SiC MOSFETs directly?

Yes - the IR2102STR can drive discrete SiC MOSFETs with gate charges ≤35 nC using 15 V V_CC and appropriate gate resistors. Its 270 mA sink current and 100 ns rise/fall times meet typical SiC switching requirements, though layout optimization (short gate loops, Kelvin source connections) remains essential for noise immunity.

Is a bootstrap diode required externally?

Yes - an external ultrafast recovery diode (e.g., 1N4148WS or BAS16) must be placed between V_CC and V_B to charge the bootstrap capacitor during low-side conduction. The IR2102STR does not integrate this diode, unlike some later-generation drivers such as IRS2004M.

How does the out-of-phase logic differ from IR2101?

The IR2102STR inverts both HIN→HO and LIN→LO paths, so a logic HIGH on HIN produces LOW on HO, and vice versa. In contrast, IR2101 passes inputs directly. This allows direct connection to complementary PWM outputs from MCUs or dedicated gate driver controllers without external inverters.

IR2102STR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Driven Configuration:: Half-Bridge

Channel Type:: Independent

Number of Drivers:: 2

Gate Type:: IGBT, N-Channel MOSFET

Voltage - Supply:: 10V ~ 20V

Logic Voltage - VIL, VIH:: 0.8V, 3V

Current - Peak Output (Source, Sink):: 210mA, 360mA

Input Type:: Inverting

High Side Voltage - Max (Bootstrap):: 600 V

Rise / Fall Time (Typ):: 100ns, 50ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

IR2102STR FAQ

1.How can I place an order for IR2102STR through Aetrix?

Please submit a Request for Quotation (RFQ) for IR2102STR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IR2102STR reliable?

The price and inventory of IR2102STR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IR2102STR is usually 5 days.

3.What payment methods are accepted for IR2102STR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IR2102STR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IR2102STR?

IR2102STR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IR2102STR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IR2102STR?

For technical support, including IR2102STR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IR2102STR requirements.

6.How does Aetrix verify that IR2102STR is sourced from the original manufacturer or authorized distributors?

All IR2102STR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IR2102STR meets industry standards.

7.What is the process for return or replacement of IR2102STR?

All IR2102STR units undergo pre-shipment inspection (PSI). If there is an issue with IR2102STR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IR2102STR part is unused and in its original packaging.

Return procedure for IR2102STR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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