Infineon Technologies IR2102STRPBF

Overview

IR2102STRPBF from Infineon Technologies is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (HO) and low-side (LO) outputs with out-of-phase logic inputs. It supports floating operation up to +600V offset, delivers 130 mA source / 270 mA sink peak output current, and operates with 10–20 V gate supply voltage. It is used in half-bridge motor drives and SMPS where precise timing control and high dV/dt immunity are required.

For engineers reviewing the IR2102STRPBF datasheet, IR2102STRPBF pinout, IR2102STRPBF application, or IR2102STRPBF equivalent, key selection criteria include its 160 ns turn-on / 150 ns turn-off propagation delays, 50 ns delay matching between channels, 3.3V/5V/15V logic compatibility, and undervoltage lockout thresholds at 8.2–9.8 V (rising) and 7.4–9 V (falling).

Technical Context

The IR2102STRPBF integrates a high-voltage level shifter and latch-immune CMOS logic to enable robust bootstrap-based high-side drive. Its floating channel (VB–VS) sustains up to 600 V offset while maintaining logic integrity across –5 V to +600 V VS range, with dV/dt immunity up to 50 V/ns.

It features matched propagation delays (≤50 ns skew), independent UVLO on VCC, and separate input logic polarity: HIN and LIN are inverted relative to their respective outputs (HO and LO), distinguishing it from the in-phase IR2101. Output drivers use high-pulse-current buffers to minimize cross-conduction risk.

Key Specifications

Pinout & Package

IR2102STRPBF is housed in an 8-lead SOIC package (body width 3.9 mm, JEDEC MS-012), RoHS-compliant and halogen-free. Pin assignments are validated per Infineon PD60043 Rev.O.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IR2102STRPBF, IR2104STRPBF simplifies bootstrap design at the cost of higher idle consumption, while IRS2004MTRPBF delivers superior drive strength but mandates layout changes-making IR2102STRPBF optimal for cost-sensitive, medium-power half-bridge implementations requiring proven timing precision.

Availability

IR2102STRPBF is available at Aetrix Electronics and suitable for motor drives, induction heating inverters, UPS systems, and industrial SMPS requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IR2102STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The IR21xx family was designed specifically for robust, cost-effective half-bridge gate driving in AC-DC, DC-AC, and motor control applications-emphasizing dV/dt immunity, timing accuracy, and bootstrap simplicity.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IR2102STRPBF is rated for 50 V/ns dV/dt on the VS node under all operating conditions. This specification is verified per Infineon's test methodology in PD60043 Rev.O and ensures reliable level-shifting operation even with fast-switching SiC MOSFETs. Exceeding this rate may cause false triggering or temporary loss of high-side output functionality.

Can IR2102STRPBF drive both MOSFETs and IGBTs?

Yes-the IR2102STRPBF is explicitly characterized for both N-channel power MOSFETs and IGBTs. Its 130 mA source / 270 mA sink capability, 10–20 V output voltage range, and 160/150 ns propagation delays meet typical gate drive requirements for devices up to 50 A/600 V. Layout guidelines for Miller capacitance suppression apply equally to both device types.

Is a bootstrap diode required externally?

Yes-an external fast-recovery or Schottky bootstrap diode is mandatory between VCC and VB. The IR2102STRPBF lacks an integrated diode (unlike IR2104), so the diode must support ≥1 A surge current and ≤50 ns reverse recovery to ensure reliable capacitor recharge during each switching cycle.

How does the logic inversion affect PWM control?

The IR2102STRPBF inverts both HIN→HO and LIN→LO: a logic-high input produces a logic-low output. This requires complementary PWM generation-i.e., the controller must output inverted signals to achieve standard half-bridge behavior. This differs from IR2101 (non-inverting) and avoids need for external inverters in certain feedback architectures.