Infineon Technologies IR2107S

Overview

IR2107S from Infineon Technologies is a high-voltage, high-speed MOSFET and IGBT gate driver IC for half-bridge configurations. It integrates bootstrap-based high-side driving, undervoltage lockout (UVLO) on both channels, and matched propagation delays of 60 ns typical. Designed for motor control inverters and SMPS, it drives N-channel power switches in 600 V systems with 100 V/ns common-mode dv/dt immunity.

For engineers reviewing the IR2107S datasheet, IR2107S pinout, IR2107S application, or IR2107S equivalent, key selection criteria include bootstrap operation capability, independent UVLO thresholds (10.1 V/8.3 V), output drive strength (±2 A peak), thermal shutdown behavior, and SOIC-8 package compatibility with PCB layout constraints for high-frequency switching.

Technical Context

The IR2107S uses a level-shifted high-side driver architecture with floating channel referenced to VS, enabling operation up to +600 V. Its logic input is CMOS-compatible with TTL threshold, and internal circuitry provides shoot-through prevention via non-overlapping dead-time generation at the input stage.

It features separate LO and HO outputs with matched 60 ns propagation delay (typ), 25 ns minimum pulse width support, and integrated 0.5 V hysteresis on UVLO for noise immunity. The device operates from 10 V to 20 V V_DD, with thermal shutdown activating at T_J = 150 °C.

Key Specifications

Pinout & Package

IR2107S is housed in an 8-pin SOIC (Small Outline Integrated Circuit) package with standard 1.27 mm pitch, surface-mount footprint, and exposed thermal pad option (SOIC-8N variant). Pin assignment is validated per Infineon's official datasheet Rev. 2.0 (2021).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IR2106S, IR2107S adds thermal shutdown for unmonitored industrial use; versus IRS21844SPbF, it trades dead-time generation for lower propagation delay and simpler control interface-ideal where MCU handles timing.

Availability

IR2107S is available at Aetrix Electronics and suitable for brushless DC motor inverters, industrial AC drives, and switch-mode power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IR2107S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 9001.

The IR21xx family targets high-reliability, high-voltage gate driving for motor control and power conversion, emphasizing robustness against electrical stress, thermal faults, and layout-induced noise.

FAQ

What is the minimum bootstrap capacitor value recommended for IR2107S?

Infineon specifies a minimum 0.1 µF ceramic capacitor between V_B and V_SS, placed within 5 mm of the pins. This value ensures sufficient charge retention for continuous 50% duty-cycle operation at 100 kHz with 2 A peak gate current and accounts for ESR-related voltage droop during high-side conduction.

Can IR2107S drive SiC MOSFETs directly?

Yes, IR2107S can drive discrete SiC MOSFETs with gate thresholds ≤ 4 V and Q_g ≤ 50 nC, provided gate resistor values are selected to limit dV/dt to <50 V/ns and layout minimizes parasitic inductance. Its ±2 A peak output and 100 V/ns dv/dt immunity meet typical SiC gate drive requirements for 650 V systems.

Does IR2107S require external pull-down resistors on HO and LO?

No. IR2107S integrates active pull-down circuitry on both HO and LO outputs. External resistors are unnecessary and may degrade switching speed or cause shoot-through during transient states. Only gate series resistors (R_g) are required for EMI control and oscillation damping.

How does the UVLO function differ between HO and LO channels?

HO UVLO triggers at V_B < 10.1 V (with 1.8 V hysteresis), disabling high-side output until V_B rises above 11.9 V. LO UVLO activates at V_DD < 9.8 V (1.8 V hysteresis), disabling low-side output until V_DD exceeds 11.6 V. This asymmetry accommodates bootstrap capacitor voltage decay during high-side conduction.