Infineon Technologies IR21141SSPBF

Overview

IR21141SSPBF from International Rectifier is a high-voltage half-bridge gate driver IC designed to control N-channel MOSFETs or IGBTs in switching power stages. It features 600 V or 1200 V floating channel capability, 2 A source / 3 A sink output drive strength, integrated desaturation detection, soft over-current shutdown, and matched propagation delays (±75 ns max deadtime mismatch). It is used in motor drives, UPS inverters, and resonant DC-DC converters where robust fault management and noise-immune gate driving are required.

For engineers reviewing the IR21141SSPBF datasheet, IR21141SSPBF pinout, IR21141SSPBF application, or IR21141SSPBF equivalent, key selection considerations include its dual UVLO thresholds (9.3 V/8.7 V for VCC and VB–VS), 3 µs desat blanking time, 9.25 µs soft shutdown duration, separate pull-up/pull-down output pins, and 24-Lead SSOP package with dedicated COM/VS ground separation for emitter sensing.

Technical Context

The IR21141SSPBF implements independent undervoltage lockout for both low-side (VCC) and high-side (VB–VS) supplies, each with 0.9 V hysteresis. Its desaturation detection circuit monitors DSH and DSL inputs with 8.0 V typical threshold and 1.0 V hysteresis, triggering soft shutdown via SSDH/SSDL outputs after a 3 µs blanking window and 3.3 µs propagation delay.

It supports synchronized multi-phase fault handling through SY_FLT and FAULT/SD CMOS-compatible (3.3 V) signals, enabling coordinated shutdown across phases. The two-stage turn-on output delivers 2 A peak current for <200 ns, then steps down to 1 A for sustained drive-enabling precise di/dt control during IGBT/MOSFET turn-on.

Key Specifications

Pinout & Package

IR21141SSPBF is housed in a 24-Lead SSOP (Shrink Small Outline Package) with exposed thermal pad, optimized for high-voltage isolation and thermal dissipation in compact power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with IRS21844SPBF and UCC27211D, the IR21141SSPBF uniquely combines 1200 V floating capability, integrated desat detection, soft shutdown, and multi-phase synchronization-making it the only choice for high-reliability IGBT inverters where fault autonomy and bus voltage margin are critical.

Availability

IR21141SSPBF is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from original manufacturer channels.

Supply support for IR21141SSPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies since 2015) was a pioneer in power semiconductor design, specializing in high-performance gate drivers, MOSFETs, and IGBTs for industrial and automotive power conversion.

The IR2114/IR2214 family was engineered specifically for ruggedized half-bridge control in high-voltage motor drives and UPS systems-emphasizing fault autonomy, noise immunity, and bootstrap-compatible operation without external level shifters.

FAQ

What is the maximum allowable dV/dt on the VS pin?

The IR21141SSPBF withstands up to 50 V/ns dV/dt on the VS pin under normal operation, as specified in Absolute Maximum Ratings. This rating ensures reliable operation during fast-switching events in 600 V and 1200 V bus systems without false triggering or latch-up. Layout practices-including short, low-inductance VS traces and proper decoupling-must be followed to maintain this immunity in practice.

Can IR21141SSPBF drive SiC MOSFETs directly?

Yes-the 2 A source / 3 A sink capability, 24 ns rise time (1 nF load), and 220 ns propagation delay support direct gate driving of common 1200 V SiC MOSFETs (e.g., C3M0065090D) up to 100 kHz. However, external negative turn-off bias (–5 V) and optimized gate resistor selection are recommended to ensure safe dv/dt control and minimize Miller-induced turn-on risk.

How does the soft shutdown function interact with the FAULT/SD pin?

During desaturation, the internal soft shutdown circuit activates SSDH/SSDL outputs first, ramping gate discharge over ~9.25 µs. Only after soft shutdown completes does the FAULT/SD pin assert low (open-drain) to signal latched fault status. FLT_CLR must be pulsed low to clear the latch and re-enable outputs-ensuring fault persistence until deliberate system-level recovery.

Is the 24-Lead SSOP package RoHS-compliant and lead-free?

Yes-the "SSPBF" suffix explicitly denotes lead-free (Pb-free) and RoHS-compliant construction per JEDEC J-STD-609. The package uses matte tin plating on leads and meets IPC/JEDEC J-STD-020 moisture sensitivity level 3 (MSL3), requiring bake conditioning before reflow if exposed to ambient >12 months.